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    METHOD OF GROWING CARBON NANOTUBES AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME
    23.
    发明申请
    METHOD OF GROWING CARBON NANOTUBES AND METHOD OF MANUFACTURING FIELD EMISSION DEVICE USING THE SAME 有权
    碳纳米管的制造方法和使用该方法制造场致发射装置的方法

    公开(公告)号：US20100009474A1

    公开(公告)日：2010-01-14

    申请号：US11476654

    申请日：2006-06-29

    Applicant: Ha-Jin Kim ,  Sang-Mock Lee

    Inventor： Ha-Jin Kim ,  Sang-Mock Lee

    IPC: H01L21/18 ,  B05D3/10 ,  C23C14/30 ,  C23C16/00 ,  C23C14/35

    CPC classification number: B01J37/0244 ,  B01J23/38 ,  B01J23/74 ,  B01J33/00 ,  B01J37/347 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J9/025 ,  H01J2201/30469

    Abstract: A method of growing carbon nanotubes and a method of manufacturing a field emission device using the same is provided. The method of growing carbon nanotubes includes steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes, forming an inactivation layer on the catalyst metal layer to reduce the activity of the catalyst metal layer, and growing carbon nanotubes on a surface of the catalyst metal layer. Because the inactivation layer partially covers the catalyst metal layer, carbon nanotubes are grown on a portion of the catalyst metal layer that is not covered by the inactivation layer. Thus, density of the carbon nanotubes can be controlled. This method for growing carbon nanotubes can be used to make an emitter of a field emission device. The field emission device having carbon nanotube emitter made of this method has superior electron emission characteristics.

    Abstract translation: 提供生长碳纳米管的方法和制造使用其的场致发射器件的方法。 生长碳纳米管的方法包括制备基材的步骤，在基材上形成催化剂金属层以促进碳纳米管的生长，在催化剂金属层上形成失活层以降低催化剂金属层的活性和生长碳 纳米管在催化剂金属层的表面上。 因为失活层部分地覆盖催化剂金属层，所以在催化剂金属层的未被钝化层覆盖的部分上生长碳纳米管。 因此，可以控制碳纳米管的密度。 用于生长碳纳米管的这种方法可用于制造场致发射器件的发射极。 具有由该方法制成的碳纳米管发射体的场发射器件具有优异的电子发射特性。

    Method of growing carbon nanotubes and method of manufacturing field emission device using the same
    25.
    发明授权
    Method of growing carbon nanotubes and method of manufacturing field emission device using the same 有权
    生长碳纳米管的方法及使用其制造场致发射器件的方法

    公开(公告)号：US07744440B2

    公开(公告)日：2010-06-29

    申请号：US11476654

    申请日：2006-06-29

    Applicant: Ha-Jin Kim ,  Sang-Mock Lee

    Inventor： Ha-Jin Kim ,  Sang-Mock Lee

    IPC: H01J9/00

    CPC classification number: B01J37/0244 ,  B01J23/38 ,  B01J23/74 ,  B01J33/00 ,  B01J37/347 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/16 ,  H01J9/025 ,  H01J2201/30469

    Abstract: A method of growing carbon nanotubes and a method of manufacturing a field emission device using the same is provided. The method of growing carbon nanotubes includes steps of preparing a substrate, forming a catalyst metal layer on the substrate to promote growing of carbon nanotubes, forming an inactivation layer on the catalyst metal layer to reduce the activity of the catalyst metal layer, and growing carbon nanotubes on a surface of the catalyst metal layer. Because the inactivation layer partially covers the catalyst metal layer, carbon nanotubes are grown on a portion of the catalyst metal layer that is not covered by the inactivation layer. Thus, density of the carbon nanotubes can be controlled. This method for growing carbon nanotubes can be used to make an emitter of a field emission device. The field emission device having carbon nanotube emitter made of this method has superior electron emission characteristics.

    Abstract translation: 提供生长碳纳米管的方法和制造使用其的场致发射器件的方法。 生长碳纳米管的方法包括制备基材的步骤，在基材上形成催化剂金属层以促进碳纳米管的生长，在催化剂金属层上形成失活层以降低催化剂金属层的活性和生长碳 纳米管在催化剂金属层的表面上。 因为失活层部分地覆盖催化剂金属层，所以在催化剂金属层的未被钝化层覆盖的部分上生长碳纳米管。 因此，可以控制碳纳米管的密度。 用于生长碳纳米管的这种方法可用于制造场致发射器件的发射极。 具有由该方法制成的碳纳米管发射体的场发射器件具有优异的电子发射特性。

    Method of growing carbon nanotubes and method of manufacturing field emission device having the same
    26.
    发明授权
    Method of growing carbon nanotubes and method of manufacturing field emission device having the same 失效
    生长碳纳米管的方法及其制造方法

    公开(公告)号：US07585770B2

    公开(公告)日：2009-09-08

    申请号：US11350864

    申请日：2006-02-10

    Applicant: Young-Jun Park ,  Ha-Jin Kim

    Inventor： Young-Jun Park ,  Ha-Jin Kim

    IPC: H01L21/44

    CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B32/162 ,  H01J1/304 ,  H01J9/025 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2329/0455

    Abstract: In a method of forming carbon nanotubes (CNTs) and a method of manufacturing a field emission display (FED) device using the CNTs, the method includes preparing a substrate on which a silicon layer is formed, sequentially forming a buffer layer and a catalyst metal layer on the silicon layer, partly forming metal silicide domains by diffusion between the silicon layer, the buffer layer and the catalyst metal layer by annealing the substrate, and growing CNTs on a surface of the catalyst metal layer.

    Abstract translation: 在形成碳纳米管（CNT）的方法和使用CNT的场发射显示（FED）器件的制造方法中，该方法包括制备其上形成有硅层的衬底，顺序地形成缓冲层和催化剂金属 层，通过使衬底退火，在硅层，缓冲层和催化剂金属层之间扩散，并在催化剂金属层的表面上生长CNT，部分地形成金属硅化物畴。

    Field emission device (FED) having ring-shaped emitter and its method of manufacture
    28.
    发明申请
    Field emission device (FED) having ring-shaped emitter and its method of manufacture 审中-公开
    具有环形发射体的场发射装置（FED）及其制造方法

    公开(公告)号：US20070007872A1

    公开(公告)日：2007-01-11

    申请号：US11449737

    申请日：2006-06-09

    Applicant: Young-Jun Park ,  Ha-Jin Kim

    Inventor： Young-Jun Park ,  Ha-Jin Kim

    IPC: H01J1/14 ,  H01J19/06 ,  H01K1/04

    CPC classification number: H01J29/481 ,  B82Y10/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2329/00

    Abstract: A Field Emission Device (FED) having a ring-shaped emitter and its method of manufacture includes a ring-shaped emitter formed on a cathode exposed through an aperture of a gate electrode, has a shape corresponding to a shape of the aperture of the gate electrode, and has carbon nanotubes on edges thereof. The ring-shaped emitter is formed through an annealing process that controls the diffusion of a catalyst metal and silicon between a catalyst metal layer and a silicon layer.

    Abstract translation: 具有环形发射体的场发射装置（FED）及其制造方法包括形成在通过栅电极的孔暴露的阴极上的环形发射体，具有与栅极的孔的形状相对应的形状 电极，并且在其边缘上具有碳纳米管。 通过退火工艺形成环形发射体，该退火工艺控制催化剂金属和硅在催化剂金属层和硅层之间的扩散。

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