公开(公告)号：US6157573A

公开(公告)日：2000-12-05

申请号：US468329

申请日：1999-12-21

申请人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

发明人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

IPC分类号： G11C16/02 ,  G11C7/00 ,  G11C11/34 ,  G11C16/04 ,  G11C16/10

CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

公开(公告)号：US06036744A

公开(公告)日：2000-03-14

申请号：US818954

申请日：1997-03-14

申请人： Takuya Negami ,  Kazuo Kunii ,  Shinichi Inaba ,  Masataka Shimizu ,  Isao Kobayashi ,  Yoshimichi Takenaka ,  Toshihide Matsumura ,  Akira Uragami ,  Takashi Kujirai ,  Osamu Tsuchiya ,  Kimio Sugiyama ,  Shuzo Ito ,  Shoichi Kikuchi

发明人： Takuya Negami ,  Kazuo Kunii ,  Shinichi Inaba ,  Masataka Shimizu ,  Isao Kobayashi ,  Yoshimichi Takenaka ,  Toshihide Matsumura ,  Akira Uragami ,  Takashi Kujirai ,  Osamu Tsuchiya ,  Kimio Sugiyama ,  Shuzo Ito ,  Shoichi Kikuchi

IPC分类号： C21B13/00 ,  C21B13/10 ,  C21B15/00 ,  C21B11/06 ,  C22B1/20

CPC分类号： C21B13/0046 ,  C21B13/105 ,  Y02P10/136 ,  Y10T428/2991

摘要： A method of making metallic iron in which a compact, containing iron oxide such as iron ore or the like and a carbonaceous reductant such as coal or the like, is used as material, and the iron oxide is reduced through the application of heat, thereby making metallic iron. In the course of this reduction, a shell composed of metallic iron is generated and grown on the surface of the compact, and slag aggregates inside the shell. This reduction continues until substantially no iron oxide is present within the metallic iron shell. Subsequently, heating is further performed to melt the metallic iron and slag. Molten metallic iron and molten slag are separated one from the other, thereby obtaining metallic iron with a relatively high metallization ratio. Through the employment of an apparatus for making metallic iron of the present invention, the above-described method is efficiently carried out, and metallic iron having a high iron purity can be made continuously as well as productively not only from iron oxide having a high iron content but also from iron oxide having a relatively low iron content.

公开(公告)号：US5978270A

公开(公告)日：1999-11-02

申请号：US29748

申请日：1998-03-02

申请人： Toshihiro Tanaka ,  Masataka Kato ,  Osamu Tsuchiya ,  Toshiaki Nishimoto

发明人： Toshihiro Tanaka ,  Masataka Kato ,  Osamu Tsuchiya ,  Toshiaki Nishimoto

IPC分类号： G11C16/04 ,  G11C16/28 ,  G11C16/34 ,  G11C16/06

CPC分类号： G11C16/3413 ,  G11C16/0416 ,  G11C16/28 ,  G11C16/3404 ,  G11C16/3409 ,  G11C16/3459

摘要： After decreasing the threshold voltages of a plurality of memory cells collectively or selectively, the presence or absence of any memory cell of which the threshold voltage has dropped below a predetermined voltage verified collectively for each of memory cell groups connected to word line (low-threshold value verification), and any memory cell of which the threshold voltage has excessively dropped is selectively written. Also, the well of each of memory cell is formed in the region of an element isolation layer for isolating it from the substrate of a memory apparatus, and a negative voltage is supplied to the memory well distributively with a positive voltage applied as a word line voltage, thus supplying them as erase operation voltages. The absolute value of the memory well voltage is set substantially equal to or lower than the word line voltage for the read operation. Sectors constituting each memory mat includes a sector (selected sector) selected for the erase operation with each word line thereof supplied with a positive voltage, a sector (non-selected sector) not selected for the erase operation with a word line voltage different from a memory well voltage, and further a sector (completely non-selected sector) not selected for the erase operation with a word line voltage equal to the voltage between a source and a drain of the memory cell.

摘要翻译： PCT No.PCT / JP96 / 02419 Sec。 371日期1998年3月2日 102（e）1998年3月2日PCT PCT 1996年8月29日PCT公布。 公开号WO97 / 08707 日期1997年3月6日在集体或选择性地降低多个存储器单元的阈值电压之后，存在或不存在阈值电压已经下降到预定电压以下的任何存储单元，该存储单元对于连接到字的每个存储单元组 线路（低阈值验证），并且选择性地写入阈值电压过度下降的任何存储单元。 此外，存储单元的阱形成在用于将其与存储装置的基板隔离的元件隔离层的区域中，并且以施加作为字线的正电压将负电压分配地提供给存储器 电压，从而将其提供为擦除操作电压。 存储器阱电压的绝对值被设定为基本上等于或低于读取操作的字线电压。 构成每个存储器垫的扇区包括为其擦除操作选择的扇区（选择的扇区），其每个字线被提供有正电压，未被选择用于擦除操作的扇区（未选择的扇区），字线电压不同于 存储器阱电压，以及未被选择用于具有等于存储器单元的源极和漏极之间的电压的字线电压的擦除操作的扇区（完全未选择的扇区）。

公开(公告)号：US08447334B2

公开(公告)日：2013-05-21

申请号：US12776029

申请日：2010-05-07

申请人： Osamu Tsuchiya ,  Shuichi Abe ,  Yoshiyuki Imai ,  Takayuki Moriyama

发明人： Osamu Tsuchiya ,  Shuichi Abe ,  Yoshiyuki Imai ,  Takayuki Moriyama

IPC分类号： H04W68/00 ,  H04W36/00 ,  H04W4/00 ,  H04M3/42

CPC分类号： H04W4/16 ,  H04W28/08 ,  H04W36/10

摘要： As a network control device which controls a call connection between a calling party terminal and a called party terminal, a network control device determines whether the own network control device is in a congestion state when a handover request is acquired from another network control device which is in the congestion state, and stops transmitting a busy tone to a mobile terminal which is the calling party terminal and transmits a ring back tone to the mobile terminal when it is determined that the own network control device is not in the congestion state.

摘要翻译： 作为控制主叫方终端和被叫方终端之间的呼叫连接的网络控制装置，当从另一网络控制装置获取切换请求时，网络控制装置判断自己的网络控制装置是否处于拥塞状态 在拥塞状态下，并且当确定自己的网络控制设备不处于拥塞状态时，停止向作为主叫方终端的移动终端发送忙音，并向移动终端发送回铃音。

公开(公告)号：US20110220720A1

公开(公告)日：2011-09-15

申请号：US13029251

申请日：2011-02-17

申请人： Hidehiro Naito ,  Hitoshi Iizaka ,  Hidemi Mihara ,  Yoshiya Yamada ,  Osamu Tsuchiya

发明人： Hidehiro Naito ,  Hitoshi Iizaka ,  Hidemi Mihara ,  Yoshiya Yamada ,  Osamu Tsuchiya

IPC分类号： G06K7/14

CPC分类号： G06K7/146 ,  G06K7/1456 ,  G07G1/0045

摘要： According to one embodiment, a code reading apparatus includes an image capturing unit, a determining unit, and a notifying unit. The image capturing unit captures an image picked up by an image pickup unit. The determining unit determines whether the image captured by the image capturing unit satisfies a condition for extracting code data from a code symbol. The notifying unit notifies, if the determining unit determines that the image does not satisfy the condition, a cause that prevents satisfaction of the condition or a method of improving the image pickup.

摘要翻译： 根据一个实施例，代码读取装置包括图像捕获单元，确定单元和通知单元。 图像捕获单元捕获由图像拾取单元拾取的图像。 确定单元确定由图像捕获单元捕获的图像是否满足用于从代码符号提取代码数据的条件。 如果确定单元确定图像不满足条件，通知单元通知妨碍条件满足的原因或改善图像拾取的方法。

公开(公告)号：US20100182847A1

公开(公告)日：2010-07-22

申请号：US12726485

申请日：2010-03-18

申请人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

发明人： Tatsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

IPC分类号： G11C16/04

CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。

公开(公告)号：US07697345B2

公开(公告)日：2010-04-13

申请号：US12145936

申请日：2008-06-25

申请人： Tetsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

发明人： Tetsuya Ishii ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

IPC分类号： G11C11/34

CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。

公开(公告)号：US20090250519A1

公开(公告)日：2009-10-08

申请号：US12417302

申请日：2009-04-02

申请人： Yoshiya Yamada ,  Hitoshi Iizaka ,  Hidemi Mihara ,  Osamu Tsuchiya ,  Hidehiro Naito

发明人： Yoshiya Yamada ,  Hitoshi Iizaka ,  Hidemi Mihara ,  Osamu Tsuchiya ,  Hidehiro Naito

IPC分类号： G06K7/10

CPC分类号： G06K7/10732

摘要： A housing is mounted on a counter on which a basket for containing a commodity to be purchased is placed and is disposed at a position where it confronts an operator. A read window confronting a read area of a code symbol attached to a commodity is disposed on the front of the housing, and an image pickup section including a CCD area sensor having, as an image pickup area, a read area of the code symbol is incorporated at the back of the read window. An LED light source irradiates illuminating light for illuminating the code symbol, which is necessary for the area CCD sensor to take an image of the code symbol. The LED light source has an optical axis nonparallel to a read optical axis of the area image pickup device and guides the illuminating light to the read area from a position above the area image pickup device.

摘要翻译： 一个外壳被安装在柜台上，在该柜台上放置一个用于容纳待购买商品的筐，并将其放置在与操作员面对的位置上。 在外壳的正面设置面对与商品附接的代码符号的读取区域相对的读取窗口，并且包括具有作为图像拾取区域的代码符号的读取区域的CCD区域传感器的图像拾取部分 并入阅读窗口的后面。 LED光源照射用于照射区域CCD传感器拍摄代码符号的图像所需的代码符号的照明光。 LED光源具有与区域图像拾取装置的读取光轴不平行的光轴，并且从区域图像拾取装置上方的位置将照明光引导到读取区域。

公开(公告)号：US20090192909A1

公开(公告)日：2009-07-30

申请号：US12358875

申请日：2009-01-23

申请人： Hitoshi Iizaka ,  Yoshiya Yamada ,  Hidemi Mihara ,  Osamu Tsuchiya ,  Hidehiro Naitou

发明人： Hitoshi Iizaka ,  Yoshiya Yamada ,  Hidemi Mihara ,  Osamu Tsuchiya ,  Hidehiro Naitou

IPC分类号： G06K7/10 ,  G06Q30/00

CPC分类号： G06K7/10792 ,  G06K2207/1011 ,  G06Q20/201 ,  G06Q20/208 ,  G07G1/0009 ,  G07G1/0045 ,  G07G1/14

摘要： When decoding a datacode based on moving image data output from an image sensing device, moving image data output from the image sensing device is input. An image display output unit processes the moving image data and displays it on the display screen of a display as a real-time moving image.

摘要翻译： 当基于从图像感测装置输出的运动图像数据对数据信号进行解码时，输入从图像感测装置输出的运动图像数据。 图像显示输出单元处理运动图像数据并将其显示在显示器的显示屏上作为实时运动图像。

公开(公告)号：US20090003085A1

公开(公告)日：2009-01-01

申请号：US12145936

申请日：2008-06-25

申请人： Tatsuya ISHII ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

发明人： Tatsuya ISHII ,  Hitoshi Miwa ,  Osamu Tsuchiya ,  Shooji Kubono

IPC分类号： G11C16/06

CPC分类号： G11C16/3427 ,  G11C16/0491 ,  G11C16/10 ,  G11C16/12 ,  G11C16/16 ,  G11C16/3404 ,  G11C16/3431 ,  G11C16/3459 ,  G11C2216/18

摘要： A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

摘要翻译： 非易失性半导体存储器由于与字线相关的干扰而恢复存储器单元的阈值的变化。 非易失性存储器在每次写入操作之后连续执行许多写入操作，而不执行单扇区擦除，执行比通常的写入操作更快的附加写入操作，以及减轻用于附加写入的软件的负担。 存储在指定扇区中的数据在保存在寄存器中之前被读出，并且当给出预定命令时，所选扇区被进行单扇区擦除。 然后写入预期值数据由保存的数据和要另外编写的数据形成，完成写入操作。