利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

24 条记录 (耗时 0.032 秒)

    Methods and apparatus for forming thin films for semiconductor devices
    21.
    发明申请
    Methods and apparatus for forming thin films for semiconductor devices 有权
    用于形成半导体器件薄膜的方法和装置

    公开(公告)号：US20050158977A1

    公开(公告)日：2005-07-21

    申请号：US11038324

    申请日：2005-01-19

    申请人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

    发明人： Jae-Hyun Yeo ,  Young-Wook Park ,  Ki-Chul Kim ,  Jae-Jong Han

    IPC分类号： H01L21/205 ,  H01L21/285 ,  H01L21/314 ,  H01L21/316 ,  H01L21/44 ,  H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/44 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31691

    摘要： Methods and apparatus are provided for forming thin films for semiconductor devices, which enable supplying and removing reactants containing constituent elements of a thin film to be formed, by preheating and supplying a process gas and a purging gas at a predetermined temperature in forming the thin film on a substrate. For example, a method for forming a thin film includes supplying a first reactant to a chamber to chemically adsorb the first reactant onto a substrate, the first reactant being bubbled by a first gas that is preheated, purging the chamber to remove residues on the substrate having the first reactant chemically adsorbed, and forming the thin film by a means of chemical displacement by supplying a second reactant to the chamber to chemically adsorb the second reactant onto the substrate.

    摘要翻译： 提供了用于形成用于半导体器件的薄膜的方法和装置，其能够通过在预定温度下预热和提供处理气体和净化气体来形成薄膜来提供和除去含有待形成的薄膜的构成元素的反应物 在基板上。 例如，用于形成薄膜的方法包括将第一反应物供应到室以化学吸附第一反应物到基底上，第一反应物被预热的第一气体鼓泡，清洗室以除去基底上的残留物 使所述第一反应物被化学吸附，并且通过向所述室供应第二反应物以化学吸附所述第二反应物到所述基底上，通过化学位移形成所述薄膜。

    Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate
    22.
    发明授权
    Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate 有权
    形成栅电极的方法，制造具有栅电极的半导体器件的方法以及氧化衬底的方法

    公开(公告)号：US06881637B2

    公开(公告)日：2005-04-19

    申请号：US10672884

    申请日：2003-09-26

    申请人： Jae-Jong Han ,  Yong-Woo Hyung ,  Seung-Mok Shin ,  Kong-Soo Lee ,  Eun-Jung Yun

    发明人： Jae-Jong Han ,  Yong-Woo Hyung ,  Seung-Mok Shin ,  Kong-Soo Lee ,  Eun-Jung Yun

    IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/60 ,  H01L21/768

    CPC分类号： H01L21/76897 ,  H01L21/28247 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76837

    摘要： In a method for forming a gate electrode having an excellent sidewall profile, after a gate structure is formed on a substrate, a first oxide film is formed on a sidewall of the gate structure and on the substrate by re-oxidizing the gate structure and the substrate under an atmosphere including an oxygen gas and an inert gas. The gate structure has a gate oxide film pattern, a polysilicon film pattern and a metal silicide film pattern. A portion of the first oxide film formed on a sidewall of the polysilicon film pattern has a thickness substantially identical to that of a portion of the first oxide film formed on a sidewall of the metal silicide film pattern. A failure of a semiconductor device having the gate electrode can be minimized because the gate electrode has an improved sidewall profile.

    摘要翻译： 在形成具有优异的侧壁轮廓的栅电极的方法中，在基板上形成栅极结构之后，在栅极结构的侧壁和基板上形成第一氧化膜，通过重新氧化栅极结构和 在包含氧气和惰性气体的气氛下进行。 栅极结构具有栅极氧化膜图案，多晶硅膜图案和金属硅化物膜图案。 形成在多晶硅膜图案的侧壁上的第一氧化膜的一部分的厚度与形成在金属硅化物膜图案的侧壁上的第一氧化物膜的部分的厚度基本相同。 具有栅电极的半导体器件的故障可以最小化，因为栅电极具有改进的侧壁轮廓。