公开(公告)号：US20060233906A1

公开(公告)日：2006-10-19

申请号：US11404799

申请日：2006-04-17

申请人： Mitsunori Kokubo ,  Yukio Iimura ,  Masakazu Kanemoto

发明人： Mitsunori Kokubo ,  Yukio Iimura ,  Masakazu Kanemoto

IPC分类号： B29C59/00

CPC分类号： B29C59/02

摘要： A transcript apparatus has a base frame 7 supported on one end of a body frame 3, a support frame 5 supported on the other of the body frame 3, plural die bars 9 through which the frame 7 and the frame 5 are integrally connected, a movable body 19 placed between the guide frames 3B, 3B located on both sides of the body frame 3 and freely movable along the die bars 9, guide means 21 disposed on the guide frames 3B, 3B on both sides to guide the movable body 19 to a position symmetric to a center of the movable body 19, and drive means mounted on the frame 5 for moving the movable body 19 along the guide means, wherein a given pattern is transcribed from a transcription die 41 mounted on the movable body 19 to a forming product 13 placed on the frame 7.

摘要翻译： 誊本装置具有支撑在主体框架3的一端的基架7，支撑在主体框架3的另一个上的支撑框架5，框架7和框架5一体地连接的多个模具棒9， 放置在位于主体框架3的两侧的引导框架3B，3B之间的可移动体19可沿模具9自由移动，设置在两侧的引导框架3B，3B上的引导装置21以引导 可移动体19到与可移动体19的中心对称的位置，以及驱动装置，安装在框架5上，用于沿着引导装置移动可移动体19，其中给定的图案从安装在可移动体19上的转录模具41转录 主体19到放置在框架7上的成形产品13。

公开(公告)号：US20060068298A1

公开(公告)日：2006-03-30

申请号：US10535165

申请日：2003-12-01

申请人： Hisatake Sano ,  Morihisa Hoga ,  Yukio Iimura ,  Yuki Aritsuka ,  Masaaki Kurihara ,  Hiroshi Nozue ,  Akira Yoshida

发明人： Hisatake Sano ,  Morihisa Hoga ,  Yukio Iimura ,  Yuki Aritsuka ,  Masaaki Kurihara ,  Hiroshi Nozue ,  Akira Yoshida

IPC分类号： G03F1/00

CPC分类号： G03F1/78 ,  G03F1/20 ,  G03F1/22 ,  G03F1/24

摘要： It is an object of the present invention to effectively manufacture a charged-particle beam lithography mask, an X-ray lithography mask, or an extreme ultraviolet beam lithography mask by using, for example, an existing writer such as an electron beam writer for photomasks, while achieving improvement in processing accuracy of a mask pattern. A lithography mask (1) comprises a substrate (2) which has a lower surface provided substantially at the center thereof with an opening (3) and a self-supporting membrane (m) having a pattern region (4) substantially at the center of an upper surface of the substrate (2) corresponding to the opening (3). The self-supporting membrane (m) is provided with through-holes (h) of a mask pattern in it or an absorber or scatterer of a mask pattern on it, and the pattern region (4) and a peripheral region around the pattern region (5) are in one plane.

摘要翻译： 本发明的目的是通过使用例如诸如用于光掩模的电子束写入器的现有写入器来有效地制造带电粒子束光刻掩模，X射线光刻掩模或极紫外光束光刻掩模 同时实现掩模图案的处理精度的提高。 光刻掩模（1）包括基底（2），基底（2）具有基本上在其中心处设置有开口（3）的下表面和具有基本上位于中心的图案区域（4）的自支撑膜（m） 所述基板（2）的与所述开口（3）对应的上表面。 自支撑膜（m）在其上设置有掩模图案的通孔（h）或其上的掩模图案的吸收体或散射体，图案区域（4）和图案区域周围的周边区域 （5）在一个平面上。

公开(公告)号：US5614335A

公开(公告)日：1997-03-25

申请号：US282465

申请日：1994-08-01

申请人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

发明人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.

摘要翻译： 本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。 半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或 在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。 这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模 的转移模式。

公开(公告)号：US5592317A

公开(公告)日：1997-01-07

申请号：US576138

申请日：1995-12-21

申请人： Junji Fujikawa ,  Yukio Iimura ,  Masahiro Takahashi ,  Takashi Nishimoto ,  Hiroyuki Matsui ,  Masanobu Fujita

发明人： Junji Fujikawa ,  Yukio Iimura ,  Masahiro Takahashi ,  Takashi Nishimoto ,  Hiroyuki Matsui ,  Masanobu Fujita

IPC分类号： G02B5/20 ,  G02F1/1335 ,  G03F1/00

CPC分类号： G02F1/133512 ,  G03F7/0007

摘要： A chromium blank for forming a black matrix-screen to be used as a color filter for a liquid crystal display is formed by forming at least a first antireflection film, a second antireflection film and a screening film sequentially in that order on one major surface of a transparent substrate. Each of the first and the second antireflection film is a semitransparent film formed of a chromium compound or a chromium mixture, containing chromium as a principal component, and the screening film is formed of chromium, a chromium compound containing chromium as a principal component. The transparent substrate, the first antireflection film, the second antireflection film and the screening film meet an inequality: n.sub.s

摘要翻译： 用于形成用作液晶显示器的滤色器的黑色矩阵屏的铬坯通过在至少一个主表面依次形成至少第一防反射膜，第二抗反射膜和屏蔽膜 透明基材。 第一和第二抗反射膜中的每一个是由以铬为主要成分的铬化合物或铬混合物形成的半透明膜，筛选膜由以铬为主要成分的铬化合物形成。 透明衬底，第一抗反射膜，第二抗反射膜和屏蔽膜满足不等式：ns

公开(公告)号：US5419988A

公开(公告)日：1995-05-30

申请号：US102488

申请日：1993-08-05

申请人： Hiroshi Mohri ,  Keiji Hashimoto ,  Masahiro Takahashi ,  Wataru Goto ,  Yukio Iimura

发明人： Hiroshi Mohri ,  Keiji Hashimoto ,  Masahiro Takahashi ,  Wataru Goto ,  Yukio Iimura

IPC分类号： H01L21/027 ,  G03F1/00 ,  G03F9/00

CPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/32 ,  Y10T428/24917

摘要： A phase shift photomask and a photomask blank used to produce the same. A dry etching stopper layer, which is disposed between a substrate and a light-shielding layer or between the substrate and a phase shifter layer, is made of either a film mainly composed of tin oxide nitride, which has high etching selectivity and high permeability, or an alumina film formed by sputtering, followed by heat treatment carried out in an oxidizing atmosphere, thereby enabling the required overetching to be satisfactorily performed during etching of the phase shifter layer, and thus making it possible to effect precise phase control. In addition, it is possible to eliminate the occurrence of an in-plane transmittance distribution.

摘要翻译： 相移光掩模和用于制造相同的光掩模坯料。 设置在基板和遮光层之间或基板与移相器层之间的干蚀刻停止层由主要由氧化锡氮化物构成的膜构成，其具有高蚀刻选择性和高磁导率， 或通过溅射形成的氧化铝膜，然后在氧化气氛中进行热处理，从而能够在蚀刻移相层期间令人满意地进行所需的过蚀刻，从而可以实现精确的相位控制。 另外，可以消除面内透射率分布的发生。

公开(公告)号：US07789653B2

公开(公告)日：2010-09-07

申请号：US11360505

申请日：2006-02-24

申请人： Yukio Iimura ,  Masakazu Kanemoto ,  Mitsunori Kokubo

发明人： Yukio Iimura ,  Masakazu Kanemoto ,  Mitsunori Kokubo

IPC分类号： B29C59/00 ,  B28B17/00

CPC分类号： B30B15/007 ,  B30B15/068 ,  B44B5/0019 ,  B44B5/0061 ,  B44B5/022

摘要： According to an aspect of the present invention, an imprinting apparatus is provided with: a mount to support a subject body; a movable body capable of moving away from and close to the mount; a support swingably attached to the movable body; a template being attached to the support and including an imprinting face, the imprinting face being patterned to make an impression on the subject body; and a regulator intervening between the movable body and the support and including at least three actuators, the actuators being independently controllably driven so as to regulate an orientation of the imprinting face.

摘要翻译： 根据本发明的一个方面，一种压印设备具有：支架，用于支撑被检体; 能够远离并靠近安装座的可移动体; 可移动地附接到可移动体的支撑件; 模板附接到支撑件并且包括压印面，所述压印面被图案化以对被摄体进行印模; 以及调节器，其介于可移动体和支撑件之间，并且包括至少三个致动器，致动器被独立地可控地驱动以便调节压印面的取向。

公开(公告)号：US07648354B2

公开(公告)日：2010-01-19

申请号：US11403984

申请日：2006-04-14

申请人： Mitsunori Kokubo ,  Yukio Iimura ,  Masakazu Kanemoto ,  Kentaro Ishibashi

发明人： Mitsunori Kokubo ,  Yukio Iimura ,  Masakazu Kanemoto ,  Kentaro Ishibashi

IPC分类号： B32B37/02

CPC分类号： G11B7/265 ,  H01L21/682

摘要： A transfer apparatus includes a table on which a molding material is placed, a mold holding body that fixes and holds a mold disposed such as to be opposed to a surface of the table, a gimbal member which holds the mold holding body and which forms a convex spherical surface portion, a gimbal member formed with a concave spherical surface portion which is opposed and in contact with the convex spherical surface portion, a movable body that holds the gimbal member and which can advance and retreat in the vertical direction with respect to the table surface, and an attitude adjusting/holding unit that adjusts and holds attitude of the gimbal member.

摘要翻译： 转印装置包括：放置有成型材料的工作台;固定并保持设置成与工作台的表面相对的模具的模具保持体;保持模具保持体的万向架构件， 凸形球面部分，形成有与球形球面相对并接触的凹球面部分的万向节构件，可移动体，其保持万向架构件，并且能够相对于垂直方向在垂直方向前进和后退 台面和姿态调节/保持单元，其调节和保持万向节构件的姿态。

公开(公告)号：US07114949B2

公开(公告)日：2006-10-03

申请号：US11092749

申请日：2005-03-30

申请人： Makoto Nishizawa ,  Toshihiro Kasai ,  Kazuhito Kobayashi ,  Yukio Iimura

发明人： Makoto Nishizawa ,  Toshihiro Kasai ,  Kazuhito Kobayashi ,  Yukio Iimura

IPC分类号： B29C45/64

CPC分类号： B29C45/76 ,  B29C45/66 ,  B29C2045/1792 ,  B29C2945/76083 ,  B29C2945/76096 ,  B29C2945/76113 ,  B29C2945/76227 ,  B29C2945/76234 ,  B29C2945/76498 ,  B29C2945/76551 ,  B29C2945/76595 ,  B29C2945/76702 ,  B29C2945/76709 ,  B29C2945/76785 ,  B29C2945/76869 ,  B29C2945/76943

摘要： Method for mold clamping of the present invention is capable of shortening a molding cycle without any initial setting works for an engaging position of a tie bars. The method is constituted the steps of moving the tie bars in the direction of mold closing during mold close operation, judging a relative moving speed between a movable die plate and the tie bar to be within a predetermined value, engaging the tie bars with the movable die plate mechanically by operating an engaging means when the relative moving speed is judged to be within the value, then further moving the movable die plate against a fixed die plate under engagement, and after contact of a movable mold with a fixed mold driving a mold clamping cylinder, thereby executing mold clamping operation.

公开(公告)号：US5721075A

公开(公告)日：1998-02-24

申请号：US783829

申请日：1997-01-13

申请人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

发明人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

IPC分类号： G03F1/32 ,  G03F1/68 ,  H01L21/027 ,  G03F9/00

CPC分类号： G03F1/32

摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.

摘要翻译： 本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。 半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或 在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。 这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模 的转移模式。

公开(公告)号：US5538816A

公开(公告)日：1996-07-23

申请号：US225905

申请日：1994-04-11

申请人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

发明人： Keiji Hashimoto ,  Junji Fujikawa ,  Hiroshi Mohri ,  Masahiro Takahashi ,  Hiroyuki Miyashita ,  Yukio Iimura

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F1/32 ,  Y10T428/24868

摘要： A halftone phase shift photomask designed so that it is possible to shorten the photoengraving process, use a production line for a conventional photomask, prevent lowering of the contract between the transparent and semitransparent regions at a long wavelength in the visible region, which is used for inspection and measurement, and also prevent charge-up during electron beam exposure, and that ordinary physical cleaning process can be used for the halftone phase shift photomask. The halftone phase shift photomask has on a transparent substrate (1) a region which is semitransparent to exposure light and a region which is transparent to the exposure light so that the phase difference between light passing through the transparent region and light passing through the semitransparent region is substantially .pi. radians. A semitransparent film that constitutes the semitransparent region is arranged in the form of a multilayer film including layers (3, 4) of chromium or a chromium compound. For example, the layer (3) is formed of chromium oxide, chromium oxide nitride, chromium oxide carbide, or chromium oxide nitride carbide, and the layer (4) is formed of chromium or chromium nitride. The layer (3) mainly serves as a phase shift layer, while the layer (4) mainly serves as a transmittance control layer that suppresses the rise of transmittance at the long wavelength side. The semitransparent film is formed by physical vapor deposition.

摘要翻译： 设计成可以缩短光刻工艺的半色调相移光掩模，使用用于常规光掩模的生产线，防止在可见光区域的长波长处的透明区域和半透明区域之间的收缩降低，其用于 检查和测量，并且还防止电子束暴露期间的充电，并且普通的物理清洁过程可用于半色调相移光掩模。 半色调相移光掩模在透明基板（1）上具有与曝光光半透明的区域和对曝光光透明的区域，使得通过透明区域的光与通过半透明区域的光之间的相位差 基本上是pi弧度。 构成半透明区域的半透明膜以包含铬或铬化合物的层（3,4）的多层膜的形式排列。 例如，层（3）由氧化铬，氧化铬氮化物，氧化铬碳化物或氧化铬氮化物构成，层（4）由铬或氮化铬形成。 层（3）主要用作相移层，而层（4）主要用作抑制长波长侧的透射率上升的透射率控制层。 半透明膜通过物理气相沉积形成。