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公开(公告)号：US5419988A
公开(公告)日：1995-05-30
申请号：US102488
申请日：1993-08-05
IPC分类号： H01L21/027 , G03F1/00 , G03F9/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , Y10T428/24917
摘要： A phase shift photomask and a photomask blank used to produce the same. A dry etching stopper layer, which is disposed between a substrate and a light-shielding layer or between the substrate and a phase shifter layer, is made of either a film mainly composed of tin oxide nitride, which has high etching selectivity and high permeability, or an alumina film formed by sputtering, followed by heat treatment carried out in an oxidizing atmosphere, thereby enabling the required overetching to be satisfactorily performed during etching of the phase shifter layer, and thus making it possible to effect precise phase control. In addition, it is possible to eliminate the occurrence of an in-plane transmittance distribution.
摘要翻译： 相移光掩模和用于制造相同的光掩模坯料。 设置在基板和遮光层之间或基板与移相器层之间的干蚀刻停止层由主要由氧化锡氮化物构成的膜构成，其具有高蚀刻选择性和高磁导率， 或通过溅射形成的氧化铝膜，然后在氧化气氛中进行热处理，从而能够在蚀刻移相层期间令人满意地进行所需的过蚀刻，从而可以实现精确的相位控制。 另外，可以消除面内透射率分布的发生。
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2.发明授权Blanks for halftone phase shift photomasks, halftone phase shift photomasks, and methods for fabricating them 失效半色调相移光掩模的空白，半色调相移光掩模及其制造方法
公开(公告)号：US5614335A
公开(公告)日：1997-03-25
申请号：US282465
申请日：1994-08-01
申请人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
发明人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.
摘要翻译： 本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。 半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或 在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。 这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模 的转移模式。
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3.发明授权Blanks for halftone phase shift photomasks, halftone phase shift photomasks, and methods for fabricating them 失效半色调相移光掩模的空白，半色调相移光掩模及其制造方法
公开(公告)号：US5721075A
公开(公告)日：1998-02-24
申请号：US783829
申请日：1997-01-13
申请人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
发明人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
IPC分类号： G03F1/32 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32
摘要： The invention relates a halftone phase shift photomask and a blank therefor, which enables the transmittance of a phase shift portion to be varied even after blank or photomask fabrication, can accommodate to a variety of patterns, and can be fabricated on a mass scale. The exposure light transmittance of a halftone phase shift layer is arbitrarily variable within the range of 1% to 50%, inclusive, by exposing the blank or photomask to a high temperature elevated to at least 150.degree. C., to an oxidizing atmosphere, or to a reducing atmosphere at a step that can provided independent of the steps for film-forming or photomask fabrication step. This enables the exposure light transmittance of the halftone phase shift layer to be changed to any desired value after blank or photomask fabrication, and so an optimal halftone phase shift photomask to be obtained depending on the size, area, location, shape, and the like of the transferred pattern.
摘要翻译： 本发明涉及一种半色调相移光掩模及其空白处理，即使在空白或光掩模制造之后，相移部分的透射率也能够变化，可以适应各种图案，并且可以大规模制造。 半色调相变层的曝光透光率可以在1％至50％的范围内任意变化，包括在内，将空白或光掩模暴露于升高至少150℃的高温至氧化气氛，或 在可以独立于成膜或光掩模制造步骤的步骤的步骤中进行还原气氛。 这使得半色调相移层的曝光光透射率在空白或光掩模制造之后变为任何期望值，因此根据尺寸，面积，位置，形状等获得最佳半色调相移光掩模 的转移模式。
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4.发明授权Halftone phase shift photomask, halftone phase shift photomask blank, and methods of producing the same 失效半色调相移光掩模，半色调相移光掩模坯料及其制造方法
公开(公告)号：US5538816A
公开(公告)日：1996-07-23
申请号：US225905
申请日：1994-04-11
申请人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
发明人： Keiji Hashimoto , Junji Fujikawa , Hiroshi Mohri , Masahiro Takahashi , Hiroyuki Miyashita , Yukio Iimura
CPC分类号： G03F1/32 , Y10T428/24868
摘要： A halftone phase shift photomask designed so that it is possible to shorten the photoengraving process, use a production line for a conventional photomask, prevent lowering of the contract between the transparent and semitransparent regions at a long wavelength in the visible region, which is used for inspection and measurement, and also prevent charge-up during electron beam exposure, and that ordinary physical cleaning process can be used for the halftone phase shift photomask. The halftone phase shift photomask has on a transparent substrate (1) a region which is semitransparent to exposure light and a region which is transparent to the exposure light so that the phase difference between light passing through the transparent region and light passing through the semitransparent region is substantially .pi. radians. A semitransparent film that constitutes the semitransparent region is arranged in the form of a multilayer film including layers (3, 4) of chromium or a chromium compound. For example, the layer (3) is formed of chromium oxide, chromium oxide nitride, chromium oxide carbide, or chromium oxide nitride carbide, and the layer (4) is formed of chromium or chromium nitride. The layer (3) mainly serves as a phase shift layer, while the layer (4) mainly serves as a transmittance control layer that suppresses the rise of transmittance at the long wavelength side. The semitransparent film is formed by physical vapor deposition.
摘要翻译： 设计成可以缩短光刻工艺的半色调相移光掩模，使用用于常规光掩模的生产线，防止在可见光区域的长波长处的透明区域和半透明区域之间的收缩降低，其用于 检查和测量，并且还防止电子束暴露期间的充电，并且普通的物理清洁过程可用于半色调相移光掩模。 半色调相移光掩模在透明基板（1）上具有与曝光光半透明的区域和对曝光光透明的区域，使得通过透明区域的光与通过半透明区域的光之间的相位差 基本上是pi弧度。 构成半透明区域的半透明膜以包含铬或铬化合物的层（3,4）的多层膜的形式排列。 例如，层（3）由氧化铬，氧化铬氮化物，氧化铬碳化物或氧化铬氮化物构成，层（4）由铬或氮化铬形成。 层（3）主要用作相移层，而层（4）主要用作抑制长波长侧的透射率上升的透射率控制层。 半透明膜通过物理气相沉积形成。
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5.发明授权Chromium blanks for forming black matrix-screen and color filter for liquid crystal display 失效用于形成用于液晶显示的黑色矩阵屏幕和滤色器的铬空白
公开(公告)号：US5592317A
公开(公告)日：1997-01-07
申请号：US576138
申请日：1995-12-21
申请人： Junji Fujikawa , Yukio Iimura , Masahiro Takahashi , Takashi Nishimoto , Hiroyuki Matsui , Masanobu Fujita
发明人： Junji Fujikawa , Yukio Iimura , Masahiro Takahashi , Takashi Nishimoto , Hiroyuki Matsui , Masanobu Fujita
IPC分类号： G02B5/20 , G02F1/1335 , G03F1/00
CPC分类号： G02F1/133512 , G03F7/0007
摘要： A chromium blank for forming a black matrix-screen to be used as a color filter for a liquid crystal display is formed by forming at least a first antireflection film, a second antireflection film and a screening film sequentially in that order on one major surface of a transparent substrate. Each of the first and the second antireflection film is a semitransparent film formed of a chromium compound or a chromium mixture, containing chromium as a principal component, and the screening film is formed of chromium, a chromium compound containing chromium as a principal component. The transparent substrate, the first antireflection film, the second antireflection film and the screening film meet an inequality: n.sub.s
摘要翻译： 用于形成用作液晶显示器的滤色器的黑色矩阵屏的铬坯通过在至少一个主表面依次形成至少第一防反射膜，第二抗反射膜和屏蔽膜 透明基材。 第一和第二抗反射膜中的每一个是由以铬为主要成分的铬化合物或铬混合物形成的半透明膜，筛选膜由以铬为主要成分的铬化合物形成。 透明衬底，第一抗反射膜，第二抗反射膜和屏蔽膜满足不等式：ns
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公开(公告)号：US5561009A
公开(公告)日：1996-10-01
申请号：US277167
申请日：1994-07-19
IPC分类号： G03F1/30 , G03F1/68 , G03F1/80 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , Y10T428/24917 , Y10T428/24926
摘要： The invention provides a phase shift photomask which includes an etching stopper layer transparent to ultraviolet illumination light and well resistant to etching as well as chemicals, acids, etc., and enables a phase shift angle to be controlled with high accuracy. In a phase shift photomask including a transparent substrate 210, and an etching stopper layer 202 and at least a phase shifter pattern 204 stacked on the substrate in this order, the etching stopper layer 202 is composed predominantly of hafnium oxide.
摘要翻译： 本发明提供了一种相移光掩模，其包括对紫外线照明光透明且耐蚀刻以及化学品，酸等的蚀刻停止层，并且能够以高精度控制相移角。 在包括透明基板210以及蚀刻停止层202和至少层叠在基板上的移相器图案204的相移光掩模中，蚀刻停止层202主要由氧化铪组成。
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7.发明授权Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same comprising fluorine in phase shift layer 失效半色调相移光掩模，半色调相移光掩模坯，以及在相移层中制造含氟的方法
公开(公告)号：US5738959A
公开(公告)日：1998-04-14
申请号：US722439
申请日：1996-10-17
摘要： A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out at a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.
摘要翻译： 对于短波长的光具有足够高透射率的半色调相移光掩模，可用于通过使用深紫外线+辐射的曝光（例如，氪氟化物准分子激光）进行的高分辨率光刻。 半色调相移光掩模在透明基板上具有半色调相移层，其包括至少一层主要由铬化合物组成的层。 除铬原子以外，铬化合物至少含有氟原子。 即使在相对短的波长下进行曝光，也可以获得高于预定水平的透射率。 光掩模可以用于使用深紫外线+辐射的曝光，例如氟化氪激光准分子激光（波长：248nm）。 因此，可以实现高分辨率光刻。 由于光掩模可以通过与常规光掩模的情况大致相同的方法形成，所以可以提高成品率并降低成本。
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8.发明授权Phase shift photomask comprising a layer of aluminum oxide with magnesium oxide 失效相移光掩模，其包含氧化铝层与氧化镁
公开(公告)号：US5380608A
公开(公告)日：1995-01-10
申请号：US974919
申请日：1992-11-12
摘要： The invention is directed to a phase shift photomask for which a film made of a material capable of providing an etching stopper layer that excels in etching selectivity and can interrupt etching surely and automatically, and provides a phase shift photomask at least comprising a substrate 30 and a phase shifter pattern made of a material composed mainly of silicon oxide that is provided on the surface of the substrate directly or with an opaque layer 37 interposed therebetween, said phase shift photomask being characterized in that the surface 30 is provided on the surface with an etching stopper layer 30 that comprises a mixture of Al.sub.2 O.sub.3 with MgO, ZrO.sub.2, Ta.sub.2 O.sub.5 or HfO, or CrO.sub.x, CrN.sub.y, CrC.sub.z, CrO.sub.x N.sub.y, CrO.sub.x C.sub.z or CrO.sub.x N.sub.y C.sub.z, or MgF.sub.2-2x O.sub.y, CaF.sub.2-2x O.sub.y, LiF.sub.2-2x O.sub.y, BaF.sub.2-2x O.sub.y, La.sub.2 F.sub.6-2x O.sub.y or Ce.sub.2 F.sub.6-2x O.sub.y, whereby the etching stopper layer is allowed to etch a transparent film for a phase shifter surely and accurately, when making a phase shifter pattern by etching.
摘要翻译： 本发明涉及一种相移光掩模，其中由能够提供蚀刻选择性优异并且可以中断和自动中断蚀刻的蚀刻阻挡层的材料制成的膜，并且提供至少包括基板30的相移光掩模和 由主要由氧化硅构成的材料制成的移相器图案，其直接设置在基板的表面上，或者设置在其间的不透明层37，所述相移光掩模的特征在于，表面30设置在表面上 蚀刻阻挡层30，其包含Al 2 O 3与MgO，ZrO 2，Ta 2 O 5或HfO，或CrO x，CrN y，CrC z，CrO x N y，CrO x C z或CrO x N y C z或MgF 2 -2 x O y，CaF 2 -2 x O y，LiF 2 -2 x O y，BaF 2 -2 x O y，La 2 F 6 -2xOy或Ce2F6-2x Oy，从而当通过蚀刻制造移相器图案时，可以确切地和准确地蚀刻蚀刻停止层用于移相器的透明膜。
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9.发明授权Halftone phase shift photomask, halftone phase shift photomask blank, and method of producing the same 失效半色调相移光掩模，半色调相移光掩模坯料及其制造方法
公开(公告)号：US5916712A
公开(公告)日：1999-06-29
申请号：US6587
申请日：1998-01-13
摘要： A halftone phase shift photomask having a sufficiently high transmittance for light of short wavelength and usable for high-resolution lithography effected by exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light. The halftone phase shift photomask has on a transparent substrate a halftone phase shift layer which includes at least one layer composed mainly of a chromium compound. The chromium compound contains at least fluorine atoms in addition to chromium atoms. A transmittance higher than a predetermined level can be obtained even in exposure carried out a relatively short wavelength. The photomask can be used for exposure using deep-ultraviolet+radiation, e.g., krypton fluoride excimer laser light (wavelength: 248 nm). Thus, high-resolution lithography can be realized. Since the photomask can be formed by approximately the same method as in the case of the conventional photomasks, it is possible to improve the yield and reduce the cost.
摘要翻译： 对于短波长的光具有足够高透射率的半色调相移光掩模，可用于通过使用深紫外线+辐射的曝光（例如，氪氟化物准分子激光）进行的高分辨率光刻。 半色调相移光掩模在透明基板上具有半色调相移层，其包括至少一层主要由铬化合物组成的层。 除铬原子以外，铬化合物至少含有氟原子。 即使在相对短的波长下进行曝光，也可以获得高于预定水平的透射率。 光掩模可以用于使用深紫外线+辐射的曝光，例如氟化氪激光准分子激光（波长：248nm）。 因此，可以实现高分辨率光刻。 由于光掩模可以通过与常规光掩模的情况大致相同的方法形成，所以可以提高成品率并降低成本。
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公开(公告)号：US09911856B2
公开(公告)日：2018-03-06
申请号：US12900145
申请日：2010-10-07
IPC分类号： H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/78606 , H01L29/78696
摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.
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