公开(公告)号：US20150053966A1

公开(公告)日：2015-02-26

申请号：US14348948

申请日：2012-09-12

申请人： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe

发明人： Juergen Steiger ,  Duy Vu Pham ,  Anita Neumann ,  Alexey Merkulov ,  Arne Hoppe

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24

CPC分类号： H01L29/78696 ,  C23C18/1208 ,  C23C18/1225 ,  C23C18/1279 ,  C23C18/14 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02628 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

摘要： The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

摘要翻译： 本发明涉及一种包括第一和第二金属氧化物层以及电介质层的半导体层压体的制造方法，其中第一金属氧化物层被布置在第二金属氧化物层和电介质层之间。 第一和第二金属氧化物层相应地由第一和第二液相形成。 本发明还涉及可以从这种方法获得的半导体层压体以及包含这种半导体层压体的电子部件。

公开(公告)号：US20150076421A1

公开(公告)日：2015-03-19

申请号：US14395339

申请日：2013-03-26

申请人： Juergen Steiger ,  Duy Vu Pham ,  Dennis Weber ,  Silviu Botnaras

发明人： Juergen Steiger ,  Duy Vu Pham ,  Dennis Weber ,  Silviu Botnaras

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/786

CPC分类号： H01L21/02565 ,  H01B1/06 ,  H01B1/22 ,  H01L21/02554 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/7869

摘要： The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.

摘要翻译： 本发明涉及包含a）至少一种羟基锌化合物和b）至少一种第三一级元素的至少一种化合物，其使用方法是使用所述制剂生产包含ZnO的层和至电子部件的方法 使用相同的产品。

公开(公告)号：US09978591B2

公开(公告)日：2018-05-22

申请号：US14395339

申请日：2013-03-26

申请人： Juergen Steiger ,  Duy Vu Pham ,  Dennis Weber ,  Silviu Botnaras

发明人： Juergen Steiger ,  Duy Vu Pham ,  Dennis Weber ,  Silviu Botnaras

IPC分类号： H01L21/02 ,  H01L29/24 ,  H01L29/786 ,  H01B1/06 ,  H01B1/22

CPC分类号： H01L21/02565 ,  H01B1/06 ,  H01B1/22 ,  H01L21/02554 ,  H01L21/02628 ,  H01L29/24 ,  H01L29/7869

摘要： The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.

公开(公告)号：US09647133B2

公开(公告)日：2017-05-09

申请号：US15036662

申请日：2014-11-13

申请人： Duy Vu Pham ,  Kuo Hui Su

发明人： Duy Vu Pham ,  Kuo Hui Su

IPC分类号： H01L29/04 ,  H01L29/786 ,  H01L29/417 ,  H01L29/45 ,  H01L21/02 ,  H01L23/31 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L29/7869 ,  H01L21/02271 ,  H01L23/3171 ,  H01L27/1225 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618

摘要： The present invention relates to a novel thin film transistor (TFT) comprising a substrate (100) with a gate electrode layer (101) deposited and patterned thereon and a gate insulator layer (102) deposited on the gate electrode layer and the substrate, characterized in that the transistor further comprises (i) a carrier injection layer (103) arranged above the gate insulator layer, (ii) a source/drain (S/D) electrode layer (104) deposited on the carrier injection layer, and (iii) a semiconductor layer (106), methods for the production of such novel TFTs, devices comprising such TFTs, and to the use of such TFTs.