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342 条记录 (耗时 0.062 秒)

    SMART PHONE DISPLAY AND KEYBOARD EXTENSION
    23.
    发明申请
    SMART PHONE DISPLAY AND KEYBOARD EXTENSION 审中-公开
    智能手机显示屏和键盘扩展

    公开(公告)号：US20120149433A1

    公开(公告)日：2012-06-14

    申请号：US12966920

    申请日：2010-12-13

    申请人： Fu-Ying Huang ,  Lidu Huang ,  Jia-Yang Juang ,  Chiaoping Ku ,  Satoshi Yamamoto

    发明人： Fu-Ying Huang ,  Lidu Huang ,  Jia-Yang Juang ,  Chiaoping Ku ,  Satoshi Yamamoto

    IPC分类号： H04W88/02

    CPC分类号： H04M1/72527

    摘要： A device for providing an external display and keypad for a smart-phone. The device has a port for receiving the smart phone. The device does not have its own computing power, but uses the computing power of the smart phone itself, thereby allowing the device to be smaller, lighter and less expensive than a standard lap-top computer not notebook device. The device is configured with a port for receiving a smart-phone and preferably holds the smart phone so that does not extend above the surface of the device or is flush with the surface of the device. The device can also be configured to allow the smart phone itself to act as a numerical keypad adjacent to the keypad provided on the device.

    摘要翻译： 用于为智能手机提供外部显示器和键盘的设备。 该设备具有用于接收智能电话的端口。 该设备不具有自己的计算能力，而是使用智能手机本身的计算能力，从而允许设备比标准笔记本电脑而不是笔记本设备更小，更轻，更便宜。 该设备配置有用于接收智能电话的端口，并且优选地保持智能电话，使得其不在设备的表面上方延伸或者与设备的表面齐平。 该设备还可以被配置为允许智能电话本身充当与设备上提供的小键盘相邻的数字键盘。

    RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    25.
    发明申请
    RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN 有权
    耐蚀组合物及其制造方法

    公开(公告)号：US20120034563A1

    公开(公告)日：2012-02-09

    申请号：US13196446

    申请日：2011-08-02

    申请人： Koji ICHIKAWA ,  Satoshi Yamamoto

    发明人： Koji ICHIKAWA ,  Satoshi Yamamoto

    IPC分类号： G03F7/38 ,  G03F7/039

    CPC分类号： G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/2059

    摘要： A resist composition contains; a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator represented by the formula (B1). wherein R1 represents a hydrogen atom or a methyl group; A10 represents a single bond, an optionally substituted C1 to C6 alkanediyl group or the like; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; A20 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; R2 in each occurrence independently represents a C1 to C12 perfluoroalkyl group; n represents 1 or 2; Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group; Lb1 represents an optionally substituted C1 to C17 divalent aliphatic hydrocarbon group; Y represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; and Z+ represents an organic cation.

    摘要翻译： 抗蚀剂组合物含有 具有衍生自由式（a）表示的化合物的结构单元的树脂; 和由式（B1）表示的酸发生剂。 其中R1表示氢原子或甲基; A10表示单键，可以具有取代基的C1〜C6烷二基等; W1表示任选取代的C4至C36脂环族烃基; A20每次独立地表示任选取代的C 1至C 6脂族烃基; R2各自独立地表示C1〜C12全氟烷基; n表示1或2; Q1和Q2独立地表示氟原子或C1〜C6全氟烷基; Lb1表示任选取代的C 1至C 17二价脂族烃基; Y表示任选取代的C 1至C 18脂族烃基; Z +表示有机阳离子。

    RESIST PROCESSING METHOD
    27.
    发明申请
    RESIST PROCESSING METHOD 审中-公开
    电阻加工方法

    公开(公告)号：US20110189618A1

    公开(公告)日：2011-08-04

    申请号：US13062180

    申请日：2009-09-01

    申请人： Mitsuhiro Hata ,  Nobuo Ando ,  Satoshi Yamamoto ,  Junji Shigematsu ,  Akira Kamabuchi

    发明人： Mitsuhiro Hata ,  Nobuo Ando ,  Satoshi Yamamoto ,  Junji Shigematsu ,  Akira Kamabuchi

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/40

    摘要： A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.

    摘要翻译： 抗蚀剂处理方法包括以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现 通过酸，光酸产生剂（B），交联剂（C）和酸放大器（D）的作用将其溶于碱水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）硬烘烤第一抗蚀剂图案，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。

    RESIST PROCESSING METHOD
    28.
    发明申请
    RESIST PROCESSING METHOD 审中-公开
    电阻加工方法

    公开(公告)号：US20110171586A1

    公开(公告)日：2011-07-14

    申请号：US13003178

    申请日：2009-07-07

    申请人： Mitsuhiro Hata ,  Satoshi Yamamoto ,  Takayuki Miyagawa

    发明人： Mitsuhiro Hata ,  Satoshi Yamamoto ,  Takayuki Miyagawa

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/2022 ,  G03F7/38 ,  G03F7/40

    摘要： A resist processing method having the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B) and a cross-linking agent (C) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to a whole surface of the first resist film, and then exposing the first resist film through a mask; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and then drying; (8) pre baking the second resist film; (9) exposing the second resist film through a mask; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.

    摘要翻译： 一种抗蚀剂处理方法，具有以下步骤：（1）通过施加第一抗蚀剂组合物形成第一抗蚀剂膜，所述第一抗蚀剂组合物包含：具有酸不稳定基团的树脂（A），其在碱性水溶液中不溶或难溶，并且呈现 通过酸，光酸产生剂（B）和交联剂（C）的作用将其溶解在碱性水溶液中并干燥; （2）预烘第一抗蚀膜; （3）暴露于第一抗蚀剂膜的整个表面，然后通过掩模曝光第一抗蚀剂膜; （4）第一抗蚀剂膜的曝光后烘烤; （5）用第一碱性显影剂显影以获得第一抗蚀剂图案; （6）对第一抗蚀剂图案进行硬烘烤，（7）通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上，然后干燥获得第二抗蚀剂膜; （8）预烘烤第二抗蚀剂膜; （9）通过掩模使第二抗蚀剂膜曝光; （10）曝光后烘烤第二抗蚀膜; 和（11）用第二碱性显影剂显影以获得第二抗蚀剂图案。