公开(公告)号：US20050219748A1

公开(公告)日：2005-10-06

申请号：US10816062

申请日：2004-03-31

申请人： Hung-Chin Guthrie ,  Edward Pong Lee ,  Aron Pentek

发明人： Hung-Chin Guthrie ,  Edward Pong Lee ,  Aron Pentek

IPC分类号： G11B5/147 ,  G11B5/187 ,  G11B5/23 ,  G11B5/31

CPC分类号： G11B5/23 ,  G11B5/187 ,  G11B5/3116 ,  G11B5/313

摘要： A method for manufacturing an inductive write head having a metal write gap layer. The method reduces the number of necessary process steps and avoids corrosion of other write head elements such as magnetic back gap.

摘要翻译： 一种用于制造具有金属写入间隙层的电感写入头的方法。 该方法减少了必要的处理步骤的数量，并避免了其他写头元件（如磁背隙）的腐蚀。

公开(公告)号：US07509729B2

公开(公告)日：2009-03-31

申请号：US11380189

申请日：2006-04-25

申请人： Donald G. Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Aron Pentek

发明人： Donald G. Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Aron Pentek

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3163 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  Y10T29/49021 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.

摘要翻译： 用于在垂直磁记录写头中制作写极的方法使用金属掩模对主抗蚀剂进行图案化，并且在随后的图案化步骤期间仅使用离子铣削。 一层主抗蚀剂沉积在磁写磁极材料上，并且金属掩模层沉积在主抗蚀剂层上。 在金属掩模层上形成成像抗蚀剂层，并且通常以写入极的所需形状进行光刻图案化。 然后在成像抗蚀剂图案上进行无反应气体的离子研磨以对下面的金属掩模层进行图案化，然后将其用作掩模以限定主抗蚀剂图案的形状。 然后在金属掩模图案上进行用氧离子研磨以对下面的主抗蚀剂进行图案化。 然后在主抗蚀剂图案上执行没有反应气体的离子研磨以形成下面的写极。

公开(公告)号：US20080074782A1

公开(公告)日：2008-03-27

申请号：US11525789

申请日：2006-09-21

申请人： Hung-Chin Guthrie ,  Wen-Chien David Hsiao ,  Jyh-Shuey Lo ,  Aron Pentek

发明人： Hung-Chin Guthrie ,  Wen-Chien David Hsiao ,  Jyh-Shuey Lo ,  Aron Pentek

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

摘要： A magnetic write head structure that maximizes write field strength while minimizing stray fields. The write pole structure maximizes write field strength by minimizing saturation of the magnetic pole tips, and minimizes stray field writing by preventing magnetic fields from extending laterally from the sides of the magnetic pole. The write head structure includes a write pole having a pole tip configured with a stair notched shape and a steep shouldered base beneath the stair notched portion. This configuration maximizes the amount of flux that can be delivered to the pole tip while also avoiding stray fields. The magnetic pole can also be configured with wing shaped extensions that extend laterally from the pole tip region but which are recessed from the ABS by a desired amount. The magnetic write head structure can be manufactured by forming a magnetic pole with a raised portion, depositing a write gap material over the magnetic pole and then forming a magnetic pedestal over the magnetic pole and write gap, the pedestal having a width significantly smaller than the width of the raised portion of the magnetic pole, a first ion mill can then be performed to notch and trim the magnetic pole. Then a non-magnetic layer such as alumina can be deposited and a second ion mill performed to form a stair notched configuration. An alumina bump can be formed prior to ion milling to provide a mask for forming the laterally extending, recessed wings in the pole tip of the magnetic pole.

摘要翻译： 磁写头结构，使写入场强度最大化，同时最小化杂散场。 写磁极结构通过最小化磁极尖端的饱和度来最大化写入场强度，并且通过防止磁场从磁极的侧面横向延伸来最小化杂散磁场写入。 写头结构包括具有构造为具有阶梯形切口形状的极尖的写入极和在阶梯切口部下方的陡峭的肩部基座。 该配置最大化可以传送到极尖的通量，同时也避免杂散场。 磁极还可以配置有翼形延伸部，其从极尖区域横向延伸，但是从ABS凹入所需量。 可以通过形成具有凸起部分的磁极来制造磁性写入头结构，在磁极上沉积写入间隙材料，然后在磁极和写入间隙上形成磁性基座，该基座具有明显小于 磁极的凸起部分的宽度，然后可以执行第一离子磨机来切割和修整磁极。 然后可以沉积诸如氧化铝的非磁性层，并且执行第二离子磨，以形成阶梯形缺口构型。 可以在离子研磨之前形成氧化铝凸块，以提供用于在磁极的极尖中形成横向延伸的凹入的翼的掩模。

公开(公告)号：US20070245544A1

公开(公告)日：2007-10-25

申请号：US11380189

申请日：2006-04-25

申请人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Aron Pentek

发明人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Aron Pentek

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  Y10T29/49021 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.

摘要翻译： 用于在垂直磁记录写头中制作写极的方法使用金属掩模对主抗蚀剂进行图案化，并且在随后的图案化步骤期间仅使用离子铣削。 一层主抗蚀剂沉积在磁写磁极材料上，并且金属掩模层沉积在主抗蚀剂层上。 在金属掩模层上形成成像抗蚀剂层，并且通常以写入极的所需形状进行光刻图案化。 然后在成像抗蚀剂图案上进行无反应气体的离子研磨以对下面的金属掩模层进行图案化，然后将其用作掩模以限定主抗蚀剂图案的形状。 然后在金属掩模图案上进行用氧离子研磨以对下面的主抗蚀剂进行图案化。 然后在主抗蚀剂图案上执行没有反应气体的离子研磨以形成下面的写极。

公开(公告)号：US07215511B2

公开(公告)日：2007-05-08

申请号：US10816062

申请日：2004-03-31

申请人： Hung-Chin Guthrie ,  Edward Hin Pong Lee ,  Aron Pentek

发明人： Hung-Chin Guthrie ,  Edward Hin Pong Lee ,  Aron Pentek

IPC分类号： G11B5/31 ,  G11B5/23 ,  G11B5/235

CPC分类号： G11B5/23 ,  G11B5/187 ,  G11B5/3116 ,  G11B5/313

摘要： A magnetic write head having a metal, non-magnetic write gap that extends only partially to the magnetic back gap, the remainder of the distance between the pole tip and the back gap being a magnetic material. The elimination of the seed layer reduces the amount of milling required to perform the desired notching needed to form a self aligned pedestal on the first pole and voids electrolytic corrosion of the back gap during plating.

摘要翻译： 一种具有仅部分地延伸到磁背隙的金属非磁性写入间隙的磁性写头，磁极末端和后间隙之间的距离的其余部分是磁性材料。 种子层的消除减少了在第一极上形成自对准基座所需的所需切口所需的铣削量，并避免了电镀期间后隙的电解腐蚀。

公开(公告)号：US07075094B2

公开(公告)日：2006-07-11

申请号：US10930277

申请日：2004-08-30

申请人： Michael Feldbaum ,  Hung-Chin Guthrie ,  Wipul Pemsiri Jayasekara ,  Aron Pentek

发明人： Michael Feldbaum ,  Hung-Chin Guthrie ,  Wipul Pemsiri Jayasekara ,  Aron Pentek

IPC分类号： H01J37/305

CPC分类号： H01L22/20 ,  H01J2237/3114 ,  H01L21/31116 ,  H01L21/32136

摘要： A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.

摘要翻译： 用于改进离子磨应用的漂移补偿的系统为了持续时间而定义了参考步骤。 参考步骤由端点检测器控制，并被监控以用于随后的处理步骤。 后续步骤的持续时间作为参考步骤的百分比进行调整。 时间缩放因子确定后续步骤的实际持续时间。 而不是直接使用步骤持续时间，系统使用后一步骤的参考步骤百分比。 参考步骤的持续时间取决于刀具漂移。 整个持续时间以与参考步骤的持续时间相同的比例改变，从而补偿漂移对最终产品的影响。

公开(公告)号：US20060043280A1

公开(公告)日：2006-03-02

申请号：US10930277

申请日：2004-08-30

申请人： Michael Feldbaum ,  Hung-Chin Guthrie ,  Wipul Jayasekara ,  Aron Pentek

发明人： Michael Feldbaum ,  Hung-Chin Guthrie ,  Wipul Jayasekara ,  Aron Pentek

IPC分类号： B01D59/44

CPC分类号： H01L22/20 ,  H01J2237/3114 ,  H01L21/31116 ,  H01L21/32136

摘要： A system for improving drift compensation for ion mill applications defines a reference step for purposes of time duration. The reference step is controlled by an end point detector and monitored for use with subsequent process steps. The time duration for a subsequent step is adjusted as a percentage of the reference step. A time scaling factor determines the actual duration of the subsequent step. Rather than directly using times of step duration, the system uses a percentage of the reference step for the latter step. The duration of the reference step varies depending on the tool drift. The overall duration is changed in the same proportion as the duration of the reference step, and thereby compensates for the influence of drift on the end product.

公开(公告)号：US20050264949A1

公开(公告)日：2005-12-01

申请号：US10857036

申请日：2004-05-28

申请人： Yunxiao Gao ,  Aron Pentek ,  Alan Tam ,  Sue Zhang

发明人： Yunxiao Gao ,  Aron Pentek ,  Alan Tam ,  Sue Zhang

IPC分类号： G11B5/127 ,  G11B5/31 ,  G11B5/33

CPC分类号： G11B5/3136 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3163 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom can be etched in the overcoat layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.

摘要翻译： 巨磁阻（GMR）磁头包含由二氧化硅或氮化硅组成的外涂层。 这些材料的热膨胀系数（CTE）小于通常用于外涂层的氧化铝。 结果，当头部与通过的空气流的摩擦加热时，外涂层表现出较小的温度引起的突起。 形成头部的过程包括在外涂层中形成凹陷，其减小了磁极上的应力并提高了磁头的性能。 该方法包括在外涂层上沉积种子层，以准备对具有要形成凹部的开口镀金属掩模层，通过掩模层中的开口湿化学蚀刻晶种层并执行离子铣削加工 去除种子层的剩余痕迹。 随着种子层完全去除，可以通过反应离子蚀刻（RIE）工艺在覆盖层中蚀刻具有平滑侧壁和底部的沟槽。 用于分离晶片中的头元件的锯可以通过干净的沟槽而不与外涂层接触，从而避免由于使用二氧化硅或氮化硅外涂层而导致的切屑和裂纹。

公开(公告)号：US20050241140A1

公开(公告)日：2005-11-03

申请号：US10836867

申请日：2004-04-30

申请人： Amanda Baer ,  Quang Le ,  Kim Lee ,  Aron Pentek ,  Douglas Werner ,  Sue Zhang

发明人： Amanda Baer ,  Quang Le ,  Kim Lee ,  Aron Pentek ,  Douglas Werner ,  Sue Zhang

IPC分类号： G11B5/127 ,  G11B5/187

CPC分类号： G11B5/1871 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49021 ,  Y10T29/49043

摘要： A method for constructing a tapered write pole, the method including the use of a bilayer hard mask.

摘要翻译： 一种用于构造锥形写入极的方法，该方法包括使用双层硬掩模。

公开(公告)号：US20070242393A1

公开(公告)日：2007-10-18

申请号：US11809184

申请日：2007-05-31

申请人： Yunxiao Gao ,  Aron Pentek ,  Alan Tam ,  Sue Zhang

发明人： Yunxiao Gao ,  Aron Pentek ,  Alan Tam ,  Sue Zhang

IPC分类号： G11B5/127

CPC分类号： G11B5/3136 ,  G11B5/3106 ,  G11B5/3133 ,  G11B5/3163 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A giant magnetoresistive (GMR) head contains an overcoat layer consisting of silicon dioxide or silicon nitride. These materials have a coefficient of thermal expansion (CTE) that is less than alumina, which is conventionally used for the overcoat layer. As a result, the overcoat layer exhibits a smaller temperature-induced protrusion when the head heats up from friction with the passing air stream. The process of forming the head includes forming a recess in the overcoat layer that reduces the stress on the poles and improves the performance of the head. The process includes depositing a seed layer over the overcoat layer in preparation to plating a metal mask layer with an opening where the recess is to be formed, wet chemical etching the seed layer through the opening in the mask layer and performing an ion milling process to remove any remaining traces of the seed layer. With the seed layer completely removed, a trench having smooth sidewalls and bottom can be etched in the overcoat layer by a reactive ion etch (RIE) process. The saw that is used to separate the head elements in the wafer can be passed through the clean trench without contacting the overcoat layer, thereby avoiding the chipping and cracking that might otherwise result from the use of a silicon dioxide or silicon nitride overcoat layer.

摘要翻译： 巨磁阻（GMR）磁头包含由二氧化硅或氮化硅组成的外涂层。 这些材料的热膨胀系数（CTE）小于通常用于外涂层的氧化铝。 结果，当头部与通过的空气流的摩擦加热时，外涂层表现出较小的温度引起的突起。 形成头部的过程包括在外涂层中形成凹陷，其减小了磁极上的应力并提高了磁头的性能。 该方法包括在外涂层上沉积种子层，以准备对具有要形成凹部的开口镀金属掩模层，通过掩模层中的开口湿化学蚀刻晶种层并执行离子铣削加工 去除种子层的剩余痕迹。 随着种子层完全去除，可以通过反应离子蚀刻（RIE）工艺在覆盖层中蚀刻具有平滑侧壁和底部的沟槽。 用于分离晶片中的头元件的锯可以通过干净的沟槽而不与外涂层接触，从而避免由于使用二氧化硅或氮化硅外涂层而导致的切屑和裂纹。