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54 条记录 (耗时 0.033 秒)

    P-type semiconductor carbon nanotube and method of manufacturing the same
    21.
    发明申请
    P-type semiconductor carbon nanotube and method of manufacturing the same 有权
    P型半导体碳纳米管及其制造方法

    公开(公告)号：US20060067870A1

    公开(公告)日：2006-03-30

    申请号：US11202185

    申请日：2005-08-12

    申请人： Noe-jung Park ,  Sung-hoon Lee

    发明人： Noe-jung Park ,  Sung-hoon Lee

    IPC分类号： D01F9/12

    CPC分类号： B82Y30/00 ,  C01B32/174 ,  D01F11/121 ,  Y10S977/734 ,  Y10S977/742

    摘要： A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.

    摘要翻译： 提供了p型半导体碳纳米管及其制造方法。 p型半导体碳纳米管包括碳纳米管; 以及附着在碳纳米管的内壁上并从碳纳米管接收电子以实现碳纳米管的p型掺杂的卤素元素。 p型半导体碳纳米管在高温下是稳定的并且可以保持碳纳米管的本征良好的导电性。 可以使用常规的碳纳米管制造方法相对容易地获得p型半导体碳纳米管，从而显着拓宽碳纳米管应用于电子器件的范围。

    Spin field effect transistor using half metal and method of manufacturing the same
    23.
    发明授权
    Spin field effect transistor using half metal and method of manufacturing the same 有权
    使用半金属的自旋场效应晶体管及其制造方法

    公开(公告)号：US07936028B2

    公开(公告)日：2011-05-03

    申请号：US12081283

    申请日：2008-04-14

    申请人： Ki-ha Hong ,  Sung-hoon Lee ,  Jong-seob Kim ,  Jai Kwang Shin

    发明人： Ki-ha Hong ,  Sung-hoon Lee ,  Jong-seob Kim ,  Jai Kwang Shin

    IPC分类号： H01L29/82

    CPC分类号： H01L29/66984 ,  B82Y25/00 ,  H01F1/401 ,  H01F1/404 ,  H01F10/1933 ,  H01F10/1936 ,  H01F10/3254 ,  H01F10/3295 ,  H01L29/82

    摘要： A spin field effect transistor may include at least one gate electrode, a channel layer, a first stack and a second stack separate from each other on a substrate, wherein the channel layer is formed of a half metal. The half metal may be at least one material selected from the group consisting of chrome oxide (CrO2), magnetite (Fe3O4), a double perovskite structure material, a Heusler alloy, NiMnSb, La(1-x)AxMnO3 (A=Ca, Ba, Sr, x˜0.3), and GaN doped with Cu, and the double perovskite structure material is expressed as a chemical composition of A2BB′O6, and a material corresponding to A is Ca, Sr, or Ba, a material corresponding to B is a 3d orbital transition metal, and a material corresponding to B′ is a 4d orbital transition metal. The 3d orbital transition metal may be Fe or Co, and the 4d orbital transition metal is Mo or Re.

    摘要翻译： 自旋场效应晶体管可以包括在基板上彼此分离的至少一个栅电极，沟道层，第一堆叠和第二堆叠，其中沟道层由半金属形成。 半金属可以是选自氧化铬（CrO 2），磁铁矿（Fe 3 O 4），双钙钛矿结构材料，Heusler合金，NiMnSb，La（1-x）AxMnO 3（A = Ca， Ba，Sr，x〜0.3）和掺杂有Cu的GaN，双钙钛矿结构材料表示为A2BB'O6的化学组成，对应于A的材料为Ca，Sr或Ba，相当于 B是3d轨道过渡金属，对应于B'的材料是4d轨道过渡金属。 3d轨道过渡金属可以是Fe或Co，4d轨道过渡金属是Mo或Re。