Flame Retardant Thermoplastic Resin Composition
    21.
    发明申请
    Flame Retardant Thermoplastic Resin Composition 有权
    阻燃热塑性树脂组合物

    公开(公告)号:US20070295946A1

    公开(公告)日:2007-12-27

    申请号:US11576172

    申请日:2004-12-27

    IPC分类号: C09K21/06 C08L69/00

    摘要: The flame retardant thermoplastic resin composition according to the present invention comprises (A) about 45 to 95 parts by weight of a polycarbonate resin; (B) about 1 to 50 parts by weight of a rubber modified vinyl graft copolymer; (C) about 0 to 50 parts by weight of a vinyl copolymer; (D) about 1 to 30 parts by weight of a mixture of oligomeric phosphoric acid ester compounds consisting of (d1) about 5 to 99 % by weight of an oligomeric phosphoric acid ester compound derived from bisphenol-A and (d2) about 1 to 95 % by weight of an oligomeric phosphoric acid ester compound derived from resorcinol, per 100 parts by weight of the sum of (A), (B) and (C); and (E) about 0.05˜5 parts by weight of a fluorinated polyolefin resin, per 100 parts by weight of the sum of (A), (B) and (C).

    摘要翻译: 根据本发明的阻燃热塑性树脂组合物包含(A)约45至95重量份的聚碳酸酯树脂; (B)约1〜50重量份的橡胶改性乙烯基接枝共聚物; (C)约0〜50重量份的乙烯基共聚物; (D)约1至30重量份由(d 1 -1)组成的低聚磷酸酯化合物的混合物,其由约5至99重量%的衍生自双酚A的低聚磷酸酯化合物, (A),(B)和(C)的总和相对于每100重量份的约1〜95重量%的衍生自间苯二酚的低聚磷酸酯化合物(A)和(d 2 N 2) ); 和(E)每100重量份(A),(B)和(C)的总和为约0.05〜5重量份的氟化聚烯烃树脂。

    Field effect transistor and method for manufacturing the same
    24.
    发明申请
    Field effect transistor and method for manufacturing the same 有权
    场效应晶体管及其制造方法

    公开(公告)号:US20070099368A1

    公开(公告)日:2007-05-03

    申请号:US11454721

    申请日:2006-06-16

    IPC分类号: H01L21/8238 H01L29/788

    摘要: A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and a semiconductor substrate using an insulating layer having a multi-layer structure with different etch rates. Since parasitic capacitance between the gate electrode and the semiconductor substrate is reduced by the void, the head portion of the gate electrode can be made large so that gate resistance can be reduced. In addition, since the height of the gate electrode can be adjusted by adjusting the thickness of the insulating layer, device performance as well as process uniformity and repeatability can be improved.

    摘要翻译: 提供具有头部比脚部宽的T形或γ形的精细栅电极的场效应晶体管,以及制造场效应晶体管的方法。 使用具有不同蚀刻速率的多层结构的绝缘层,在栅电极的头部和半导体衬底之间形成空隙。 由于栅电极和半导体衬底之间的寄生电容由于空隙而减小,所以能够使栅电极的头部大,能够降低栅极电阻。 此外,由于可以通过调节绝缘层的厚度来调节栅电极的高度,因此可以提高器件性能以及工艺的均匀性和重复性。

    Method for preparing (s)-indoline-2-carboxylic acid and (s)-indoline-2-carboxylic acid methyl ester using hydrolytic enzyme
    25.
    发明申请
    Method for preparing (s)-indoline-2-carboxylic acid and (s)-indoline-2-carboxylic acid methyl ester using hydrolytic enzyme 失效
    使用水解酶制备(S) - 二氢吲哚-2-羧酸和(S) - 二氢吲哚-2-羧酸甲酯的方法

    公开(公告)号:US20070077632A1

    公开(公告)日:2007-04-05

    申请号:US10596068

    申请日:2004-11-03

    IPC分类号: C12P17/10

    摘要: Disclosed is a method for preparing (S)-indoline-2-carboxylic acid and (S)-indoline-2-carboxylic acid methyl ester using an inexpensive industrially available enzyme capable of assuring superior optical purity and yield. At this time, the hydrolytic enzyme is selected from the group consisting of Savinase, Alcalase, Novozym 243, Everlase, Esperase, Protease 7 and Acylase, whereby (S)-indoline-2-carboxylic acid and methyl ester thereof having an optical purity of at least 99% e.e. can be obtained through a simplified preparation process, thus generating economic benefits.

    摘要翻译: 公开了一种使用廉价的工业可得的酶制备(S) - 二氢吲哚-2-羧酸和(S) - 二氢吲哚-2-羧酸甲酯的方法,其能够确保优异的光学纯度和产率。 此时,水解酶选自Savinase,Alcalase,Novozym 243,Everlase,Esperase,Protease 7和Acylase,由此得到具有光学纯度的(S) - 二氢吲哚-2-羧酸及其甲酯 至少99%ee 可以通过简化的制备过程获得,从而产生经济效益。

    Plasma display device and method of driving the same
    26.
    发明申请
    Plasma display device and method of driving the same 失效
    等离子体显示装置及其驱动方法

    公开(公告)号:US20060214885A1

    公开(公告)日:2006-09-28

    申请号:US11330995

    申请日:2006-01-13

    申请人: Yun Jung Jong Lim

    发明人: Yun Jung Jong Lim

    IPC分类号: G09G3/28

    摘要: The present invention relates to a plasma display device and a method of driving the plasma display device. A gradually rising waveform and then a falling waveform are applied to the scan electrodes. A rising waveform has a slope different from that of a rising waveform applied in a first sub-field in at least one of sub-fields posterior to the first sub-field.

    摘要翻译: 等离子体显示装置及其驱动方法技术领域本发明涉及等离子体显示装置及其驱动方法。 向扫描电极施加逐渐上升的波形,然后下降的波形。 上升波形具有与在第一子场后面的至少一个子场中的第一子场中施加的上升波形的斜率不同的斜率。

    Method of preparing 1-[cyano(p-methoxyphenyl) ethyl]cyclohexanol
    27.
    发明申请
    Method of preparing 1-[cyano(p-methoxyphenyl) ethyl]cyclohexanol 审中-公开
    1- [氰基(对甲氧基苯基)乙基]环己醇的制备方法

    公开(公告)号:US20060128981A1

    公开(公告)日:2006-06-15

    申请号:US11285836

    申请日:2005-11-22

    IPC分类号: C07C253/30

    摘要: The present invention is directed to a method of preparing 1-[cyano(p-methoxyphenyl)methyl]cyclohexanol. Particularly, the method of this invention includes reacting p-methoxyphenylacetonitrile with cyclohexanone in the presence of a solvent mixture including an aqueous solution of basic material and a water-soluble alcohol, to prepare 1-[cyano(p-methoxyphenyl)methyl]cyclohexanol represented by Formula 1 below. According to this method, 1-[cyano(p-methoxyphenyl)methyl]cyclohexanol, which is an important intermediate for use in the preparation of venlafaxine, exhibiting excellent efficacy as an antidepressant, may be very purely and economically prepared, and as well, may be industrially mass produced.

    摘要翻译: 本发明涉及1- [氰基(对甲氧基苯基)甲基]环己醇的制备方法。 特别地,本发明的方法包括在包含碱性物质的水溶液和水溶性醇的溶剂混合物的存在下,使对甲氧基苯基乙腈与环己酮反应,从而制备1- [氰基(对甲氧基苯基)甲基]环己醇 通过下面的公式1。 根据该方法,作为用于制备文拉法辛的重要中间体的1- [氰基(对甲氧基苯基)甲基]环己醇,作为抗抑郁药具有优异的疗效,可以是非常纯粹和经济地制备的, 可能在工业上大规模生产。

    Transistor or semiconductor device and method of fabricating the same
    28.
    发明申请
    Transistor or semiconductor device and method of fabricating the same 有权
    晶体管或半导体器件及其制造方法

    公开(公告)号:US20060105510A1

    公开(公告)日:2006-05-18

    申请号:US11179971

    申请日:2005-07-11

    IPC分类号: H01L21/338

    CPC分类号: H01L29/66462 H01L29/7785

    摘要: Provided are a transistor of a semiconductor device and method of fabricating the same. The transistor includes: an epitaxy substrate disposed on a semi-insulating substrate and having a buffer layer, a first Si planar doping layer, a first conductive layer, a second Si planar doping layer, and a second conductive layer, which are sequentially stacked, the second Si planar doping layer having a doping concentration different from that of the first Si planar doping layer; a source electrode and a drain electrode diffusing into the first Si planar doping layer to a predetermined depth and disposed on both sides of the second conductive layer to form an ohmic contact; and a gate electrode disposed on the second conductive layer between the source and drain electrodes and being in contact with the second conductive layer. In this structure, both isolation and switching speed of the transistor can be increased. Also, the maximum voltage limit applied to the transistor is increased due to increases in gate turn-on voltage and threshold voltage and a reduction in parallel conduction element. As a result, the power handling capability of the transistor can be improved, thus improving a high-power low-distortion characteristic and an isolation characteristic.

    摘要翻译: 提供半导体器件的晶体管及其制造方法。 晶体管包括:设置在半绝缘衬底上并具有缓冲层的外延衬底,第一Si平面掺杂层,第一导电层,第二Si平面掺杂层和第二导电层, 所述第二Si平面掺杂层具有与所述第一Si平面掺杂层的掺杂浓度不同的掺杂浓度; 源极电极和漏电极,其扩散到所述第一Si平面掺杂层中至预定深度并且设置在所述第二导电层的两侧以形成欧姆接触; 以及设置在所述源极和漏极之间的所述第二导电层上并与所述第二导电层接触的栅电极。 在这种结构中,可以提高晶体管的隔离和开关速度。 此外,施加到晶体管的最大电压限制由于栅极导通电压和阈值电压的增加以及并联导通元件的减小而增加。 结果,可以提高晶体管的功率处理能力,从而提高高功率低失真特性和隔离特性。