利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.018 秒)

    Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof
    1.
    发明授权
    Heterogeneous substrate, nitride-based semiconductor device using same, and manufacturing method thereof 有权
    不均匀基板，使用其的基于氮化物的半导体器件及其制造方法

    公开(公告)号：US08878211B2

    公开(公告)日：2014-11-04

    申请号：US13327647

    申请日：2011-12-15

    申请人： Sung Min Hwang ,  Kwang Hyeon Baik ,  Yong Gon Seo ,  Hyung Do Yoon ,  Jae Hyoun Park

    发明人： Sung Min Hwang ,  Kwang Hyeon Baik ,  Yong Gon Seo ,  Hyung Do Yoon ,  Jae Hyoun Park

    IPC分类号： H01L33/16 ,  H01L21/02 ,  H01L33/00 ,  H01L33/22

    CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/22

    摘要： Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

    摘要翻译： 提供了异质衬底，使用其的氮化物基半导体器件及其制造方法，以在非均相衬底的非极性或半极性平面上形成高质量非极性或半极性氮化物层 通过调整晶体生长模式。 准备具有非极性面和半极性面之一的基底基板，在基底基板的平面上形成氮化物系成核层。 第一缓冲层在垂直方向上比在成核层上的横向方向上生长得更快。 横向生长层在横向上比在第一缓冲层上比垂直方向上生长得更快。 在侧生长层上形成第二缓冲层。 可以在第一缓冲层上的横向生长层和第二缓冲层之间形成具有多个孔的氮化硅层。

    HETEROGENEOUS SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR DEVICE USING SAME, AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    HETEROGENEOUS SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR DEVICE USING SAME, AND MANUFACTURING METHOD THEREOF 有权
    异质基板，使用了氮化物的半导体器件及其制造方法

    公开(公告)号：US20120086017A1

    公开(公告)日：2012-04-12

    申请号：US13327647

    申请日：2011-12-15

    申请人： Sung Min HWANG ,  Kwang Hyeon BAIK ,  Yong Gon SEO ,  Hyung Do YOON ,  Jae Hyoun PARK

    发明人： Sung Min HWANG ,  Kwang Hyeon BAIK ,  Yong Gon SEO ,  Hyung Do YOON ,  Jae Hyoun PARK

    IPC分类号： H01L29/22 ,  H01L21/20 ,  H01L29/06

    CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02639 ,  H01L33/007 ,  H01L33/22

    摘要： Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.

    摘要翻译： 提供了异质衬底，使用其的氮化物基半导体器件及其制造方法，以在非均相衬底的非极性或半极性平面上形成高质量非极性或半极性氮化物层 通过调整晶体生长模式。 准备具有非极性面和半极性面之一的基底基板，在基底基板的平面上形成氮化物系成核层。 第一缓冲层在垂直方向上比在成核层上的横向方向上生长得更快。 横向生长层在横向上比在第一缓冲层上比垂直方向上生长得更快。 在侧生长层上形成第二缓冲层。 可以在第一缓冲层上的横向生长层和第二缓冲层之间形成具有多个孔的氮化硅层。

    WIND POWER GENERATOR USING PIEZOELECTRIC ELEMENT
    4.
    发明申请
    WIND POWER GENERATOR USING PIEZOELECTRIC ELEMENT 有权

    公开(公告)号：US20220190746A1

    公开(公告)日：2022-06-16

    申请号：US17546824

    申请日：2021-12-09

    申请人： Hyeong Do YOON

    发明人： Hyeong Do YOON

    IPC分类号： H02N2/18

    摘要： The present disclosure relates to a wind power generator using a piezoelectric element. A wind power generator using a piezoelectric element according to an embodiment of the present disclosure, includes: a plurality of panels which are sequentially stacked, a wing-shaped piezoelectric member disposed between the plurality of panels for generating electrical energy by external force and a vibrating ball container disposed on one surface of the wing-shaped piezoelectric member and including a plurality of vibrating balls, wherein a hole through which wind can pass is formed in at least one surface of the vibrating ball container.

    Walking Assist Device
    6.
    发明申请
    Walking Assist Device 审中-公开

    公开(公告)号：US20170181919A1

    公开(公告)日：2017-06-29

    申请号：US15313830

    申请日：2015-02-17

    申请人： Do-Yoon Kim ,  Sun Young Park

    发明人： Do-Yoon Kim ,  Sun Young Park

    IPC分类号： A61H3/04

    CPC分类号： A61H3/04 ,  A61H3/00 ,  A61H2201/0192 ,  A61H2201/1253 ,  A61H2201/164 ,  A61H2201/1642 ,  A61H2201/165

    摘要： The present invention relates to a walking assist device which has been devised to provide a completely different type of walking assist device in effort to resolve the shortcomings or inconveniences in use of the conventional devices. The walking assist device of the present invention is provided with a main walker unit having a body member with a hollow portion in which a main walker's foot can be penetrated and fixed; and a sub-walker unit that is interconnected with said main walker unit and fixes a sub-walker's foot.

    Process for preparing perfluoroalkyl vinyl ether copolymer and copolymer
    8.
    发明授权
    Process for preparing perfluoroalkyl vinyl ether copolymer and copolymer 有权
    制备全氟烷基乙烯基醚共聚物和共聚物的方法

    公开(公告)号：US07459512B2

    公开(公告)日：2008-12-02

    申请号：US11523667

    申请日：2006-09-20

    申请人： Jin Taek Hwang ,  Do Yoon Kim ,  Jin Sung Choi ,  Boris Maximov ,  Victor Sergeevich Yuminov ,  Lev Feodorovich Sokolov

    发明人： Jin Taek Hwang ,  Do Yoon Kim ,  Jin Sung Choi ,  Boris Maximov ,  Victor Sergeevich Yuminov ,  Lev Feodorovich Sokolov

    IPC分类号： C08F216/12

    CPC分类号： C07D319/12 ,  C07C43/172 ,  C07D317/32

    摘要： Disclosed herein are a novel perfluoroalkyl vinyl ether compound, a process for preparing a copolymer by using the perfluoroalkyl vinyl ether compound, and an optical plastic material comprising a copolymer prepared by the process. More specifically, the perfluoroalkyl vinyl ether has a particular molecular structure; the process is performed by copolymerizing the perfluoroalkyl vinyl ether compound with a common fluorinated olefin in the presence of a perfluorinated radical initiator; and, the optical plastic material comprises a copolymer prepared by the process and optionally a dopant.

    摘要翻译： 本文公开了新型全氟烷基乙烯基醚化合物，通过使用全氟烷基乙烯基醚化合物制备共聚物的方法，以及包含通过该方法制备的共聚物的光学塑料材料。 更具体地说，全氟烷基乙烯基醚具有特定的分子结构; 该方法通过在全氟化自由基引发剂的存在下使全氟烷基乙烯基醚化合物与普通氟化烯烃共聚来进行; 并且光学塑料材料包括通过该方法制备的共聚物和任选的掺杂剂。