公开(公告)号：US20180219098A1

公开(公告)日：2018-08-02

申请号：US15748356

申请日：2016-07-29

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Kazuyoshi INOUE ,  Futoshi UTSUNO ,  Yuki TSURUMA ,  Shigekazu TOMAI ,  Kazuaki EBATA

IPC: H01L29/786 ,  C01G15/00 ,  C23C14/08 ,  C23C14/34 ,  C23C14/58 ,  C30B1/02 ,  C30B29/16 ,  H01L29/24 ,  H01L29/04 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7869 ,  C01G15/00 ,  C01P2002/54 ,  C01P2002/70 ,  C01P2004/61 ,  C01P2006/40 ,  C23C14/08 ,  C23C14/086 ,  C23C14/34 ,  C23C14/5806 ,  C30B1/023 ,  C30B29/16 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/02631 ,  H01L21/02667 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66969

Abstract: A crystalline oxide semiconductor thin film that is composed mainly of indium oxide and comprises surface crystal grains having a single crystal orientation.

公开(公告)号：US20170263786A1

公开(公告)日：2017-09-14

申请号：US15605779

申请日：2017-05-25

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/26 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/47 ,  H01L29/66969 ,  H01L29/861

Abstract: A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

公开(公告)号：US20170141240A1

公开(公告)日：2017-05-18

申请号：US15392540

申请日：2016-12-28

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Shigekazu TOMAI ,  Masatoshi SHIBATA ,  Emi KAWASHIMA ,  Koki YANO ,  Hiromi HAYASAKA

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/04 ,  H01L29/267 ,  H01L29/16 ,  H01L29/24

CPC classification number: H01L29/872 ,  H01L29/04 ,  H01L29/16 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/267 ,  H01L29/47

Abstract: A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

公开(公告)号：US20130313548A1

公开(公告)日：2013-11-28

申请号：US13862568

申请日：2013-04-15

Applicant: IDEMITSU KOSAN CO., LTD.

Inventor： Koki YANO ,  Hirokazu KAWASHIMA ,  Kazuyoshi INOUE ,  Shigekazu TOMAI ,  Masashi KASAMI

IPC: H01L29/26

CPC classification number: H01L29/263 ,  C23C14/086 ,  H01L29/7869

Abstract: A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8  (1) In/(In+X)=0.29 to 0.99  (2) Zn/(X+Zn)=0.29 to 0.99  (3).