公开(公告)号：US20160155664A1

公开(公告)日：2016-06-02

申请号：US14939286

申请日：2015-11-12

Applicant: IMEC VZW

Inventor： Boon Teik Chan ,  Silvia Armini ,  Frederic Lazzarino

IPC: H01L21/768 ,  H01L23/532 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/321

CPC classification number: H01L21/76877 ,  H01L21/31053 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76852 ,  H01L21/76871 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2221/1026 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method is provided for fabricating a semiconductor device that includes providing a structure with a sacrificial layer having at least one through-hole exposing a metal surface and, optionally, an oxide surface. In one example, the method may include applying a self-assembled monolayer selectively on the exposed metal surface and/or on the oxide surface. The method may also include growing a metal on the self-assembled monolayer and on the exposed metal surface if no self-assembled monolayer is present thereon, so as to fill the at least one through-hole, thereby forming at least one metal structure. The method may further include replacing the first sacrificial layer by a replacement dielectric layer having a dielectric constant of at most 3.9.

Abstract translation: 提供了一种用于制造半导体器件的方法，该半导体器件包括提供具有牺牲层的结构，所述牺牲层具有暴露金属表面和任选地氧化物表面的至少一个通孔。 在一个实例中，该方法可以包括在暴露的金属表面和/或氧化物表面上选择性地应用自组装单层。 该方法还可以包括在自组装单层上和暴露的金属表面上生长金属，如果不存在自组装单层，以便填充至少一个通孔，从而形成至少一个金属结构。 该方法还可以包括通过介电常数至多为3.9的置换介电层代替第一牺牲层。

公开(公告)号：US09117666B2

公开(公告)日：2015-08-25

申请号：US14555356

申请日：2014-11-26

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D

Inventor： Quoc Toan Le ,  Mikhail Baklanov ,  Yiting Sun ,  Silvia Armini

IPC: H01L21/469 ,  H01L21/02

CPC classification number: H01L21/02359 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02343 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method is provided for activating an exposed surface of a porous dielectric layer, the method comprising the steps of: filling with a first liquid at least the pores present in a part of the porous dielectric layer, the part comprising the exposed surface, removing the first liquid selectively from the surface, activating the exposed surface, and removing the first liquid from the bulk part of the porous dielectric layer.

Abstract translation: 提供一种用于激活多孔电介质层的暴露表面的方法，该方法包括以下步骤：至少填充第一液体至少存在于多孔电介质层的一部分中的孔，该部分包括暴露表面，去除 第一液体从表面选择性地起作用，激活暴露的表面，以及从多孔介电层的本体部分去除第一液体。