公开(公告)号：US20160071565A1

公开(公告)日：2016-03-10

申请号：US14843484

申请日：2015-09-02

Applicant: Infineon Technologies AG

Inventor： Marko Lemke

IPC: G11C8/00 ,  G11C5/14 ,  H01L27/108

CPC classification number: G11C8/00 ,  G11C5/141 ,  G11C5/147 ,  H01G11/06 ,  H01G11/50 ,  H01L27/10805 ,  H01L27/1085 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/145 ,  H01L45/1675 ,  H01M10/425 ,  Y02E60/13

Abstract: A memory circuit includes a memory element which includes a first electrode layer including lithium. The memory element further includes a second electrode layer and a solid-state electrolyte layer arranged between the first electrode layer and the second electrode layer. The memory circuit also includes a memory access circuit configured to determine a memory state of the memory element.

Abstract translation: 存储电路包括存储元件，该存储元件包括包括锂的第一电极层。 存储元件还包括布置在第一电极层和第二电极层之间的第二电极层和固态电解质层。 存储器电路还包括被配置为确定存储器元件的存储器状态的存储器访问电路。

公开(公告)号：US20150084157A1

公开(公告)日：2015-03-26

申请号：US14037429

申请日：2013-09-26

Applicant: Infineon Technologies AG

Inventor： Stefan Tegen ,  Marko Lemke

IPC: H01L27/01 ,  H01L21/822

CPC classification number: H01L27/016 ,  H01G4/33 ,  H01G4/40 ,  H01G11/08 ,  H01L21/822 ,  H01L28/00 ,  H01L28/90 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2924/12044 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/4257 ,  H01L2924/00

Abstract: According to various embodiments, an electronic structure may be provided, the electronic structure may include: a semiconductor carrier, and a battery structure monolithically integrated with the semiconductor carrier, the battery structure including a plurality of thin film batteries.

Abstract translation: 根据各种实施例，可以提供电子结构，电子结构可以包括：半导体载体和与半导体载体单片集成的电池结构，该电池结构包括多个薄膜电池。