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公开(公告)号：US20160109536A1
公开(公告)日：2016-04-21
申请号：US14972648
申请日：2015-12-17
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Klemens Pruegl , Juergen Zimmer
CPC classification number: H01L27/22 , G01R33/07 , G01R33/09 , G01R33/093 , G01R33/098 , H01L23/5226 , H01L23/528 , H01L23/552 , H01L43/02 , H01L43/04 , H01L43/06 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator arrangement is provided, wherein a semiconductor circuit arrangement is integrated adjacent to a main surface of the semiconductor substrate into the same, wherein the metal-insulator arrangement is arranged on the main surface of the semiconductor substrate and comprises a structured metal sheet and insulation material at least partially surrounding the structured metal sheet, wherein the structured metal sheet is electrically connected to the semiconductor circuit arrangement. Then, a magnetoresistive sensor structure is applied onto a surface of the insulation material of the composite arrangement, and finally an electrical connection between the magnetoresistive sensor structure and the structured metal sheet is established, so that the magnetoresistive sensor structure is connected to the integrated circuit arrangement.
Abstract translation: 在制造磁阻传感器模块的方法中，首先提供从半导体衬底和金属 - 绝缘体布置中的复合布置，其中半导体电路布置与半导体衬底的主表面相邻地集成在其中，其中 金属绝缘体布置在半导体衬底的主表面上并且包括结构化金属片和至少部分地围绕结构化金属片的绝缘材料，其中结构化金属片电连接到半导体电路装置。 然后，将磁阻传感器结构施加到复合布置的绝缘材料的表面上，最后建立磁阻传感器结构和结构金属片之间的电连接，使得磁阻传感器结构连接到集成电路 安排。
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公开(公告)号：US20160056369A1
公开(公告)日：2016-02-25
申请号：US14933351
申请日：2015-11-05
Applicant: Infineon Technologies AG
Inventor： Stefan Kolb , Markus Eckinger
CPC classification number: H01L43/065 , G01R33/0035 , G01R33/0052 , G01R33/07 , G01R33/075 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: A hall effect device includes an active Hall region in a semiconductor substrate, and at least four terminal structures, each terminal structure including a switchable supply contact element and a sense contact element, wherein each supply contact element includes a transistor element with a first transistor terminal, a second transistor terminal, and a control terminal, wherein the second transistor terminal contacts the active Hall region or extends in the active Hall region; and wherein the sense contact elements are arranged in the active Hall region and neighboring to the switchable supply contact elements.
Abstract translation: 霍尔效应器件包括半导体衬底中的有源霍尔区域和至少四个端子结构，每个端子结构包括可切换电源接触元件和感测接触元件，其中每个电源接触元件包括具有第一晶体管端子的晶体管元件 ，第二晶体管端子和控制端子，其中第二晶体管端子接触有源霍尔区域或在有源霍尔区域中延伸; 并且其中所述感测接触元件布置在所述有源霍尔区域中并且与所述可切换电源接触元件相邻。
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23.发明申请METHOD OF PROVIDING A SEMICONDUCTOR STRUCTURE WITH FORMING A SACRIFICIAL STRUCTURE 审中-公开提供半导体结构与形成非常结构的方法公开(公告)号：US20130334624A1
公开(公告)日：2013-12-19
申请号：US13973159
申请日：2013-08-22
Applicant: Infineon Technologies AG
Inventor： Thoralf Kautzsch , Stefan Kolb , Boris Binder , Bernd Foeste , Marco Mueller
IPC: B81B3/00
CPC classification number: B81B3/0021 , B81C1/00158 , G01L9/0045 , G01L19/0636 , H01L29/84 , H04R19/005 , H04R19/04 , H04R31/00
Abstract: A method for providing a semiconductor structure includes forming a sacrificial structure by etching a plurality of trenches from a first main surface of a substrate. The method further includes covering the plurality of trenches at the first main surface with a cover material to define cavities within the substrate, removing a part of the substrate from a second main surface opposite to the first main surface to a depth at which the plurality of trenches are present, and etching away the sacrificial structure from the second main surface of the substrate.
Abstract translation: 提供半导体结构的方法包括通过从衬底的第一主表面蚀刻多个沟槽来形成牺牲结构。 该方法还包括用第一主表面覆盖多个沟槽，以覆盖衬底，以在衬底内限定空腔，从与第一主表面相反的第二主表面移除基底的一部分， 存在沟槽，并且从衬底的第二主表面蚀刻掉牺牲结构。
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公开(公告)号：US11733213B2
公开(公告)日：2023-08-22
申请号：US17247134
申请日：2020-12-01
Applicant: Infineon Technologies AG
Inventor： Rainer Markus Schaller , Matthias Eberl , Simon Gassner , Franz Jost , Stefan Kolb
CPC classification number: G01N29/2425 , G01N33/0004
Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.
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公开(公告)号：US11635410B2
公开(公告)日：2023-04-25
申请号：US17446507
申请日：2021-08-31
Applicant: Infineon Technologies AG
Inventor： Matthias Eberl , Franz Jost , Stefan Kolb
IPC: G01N29/24 , G01N29/024
Abstract: A gas sensor having a heater, a receiver, and a space arranged between the heater and the receiver, is described, the heater being configured to generate a thermoacoustic sound wave propagating through the space by using a stimulation signal. The receiver is in this case configured to receive the thermoacoustic sound wave that has propagated through the space and to convert it into a reception signal that has a time-of-flight-dependent shift with respect to the stimulation signal and therefore information relating to the gas concentration in the space.
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Patent Agency Ranking
公开(公告)号：US11530980B2
公开(公告)日：2022-12-20
申请号：US17336663
申请日：2021-06-02
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
Abstract: A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.
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公开(公告)号：US11067542B2
公开(公告)日：2021-07-20
申请号：US16686670
申请日：2019-11-18
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Stefan Kolb , Horst Theuss
Abstract: Photoacoustic gas sensor having a light pulse emitter, a microphone in a reference gas housing having a reference gas, and a sample gas housing to be filled with a gas to be analyzed. A wall separates the sample gas housing from the reference gas housing, and has a transparent region that is transparent to light within a frequency range of emitted light pulses. Remaining inner walls of the sample gas housing have a reflecting surface that reflect light pulses emitted by the emitter so that a portion of the light pulses not absorbed by the gas to be analyzed pass through the transparent region into the reference gas volume. The microphone generates a sensor signal indicating information on an acoustic wave caused by the light pulses interacting with the reference gas after crossing the gas to be analyzed.
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公开(公告)号：US10900932B2
公开(公告)日：2021-01-26
申请号：US16203859
申请日：2018-11-29
Applicant: Infineon Technologies AG
Inventor： Matthias Eberl , Franz Jost , Stefan Kolb
Abstract: An example of a system comprises a volume filled with a gas, a gas excitation device configured to excite the gas inside the volume, a microphone configured to output a microphone signal on the basis of the gas excited by the gas excitation device, and a testing unit configured to take the microphone signal as a basis for testing a gas-tightness of the volume. An example of a photoacoustic sensor comprises a hermetically sealed sensor cell, a gas excitation device and a testing unit configured to take the microphone signal dependent on the thermally excited gas as a basis for testing a gas-tightness of the sensor cell. One example comprises a method for testing a gas-tightness of a volume filled with a gas.
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公开(公告)号：US10365208B2
公开(公告)日：2019-07-30
申请号：US15079840
申请日：2016-03-24
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan Kolb , Alfons Dehe , Jochen Huber , Franz Jost , Horst Theuss , Wilhelm Wiedmeier , Juergen Woellenstein
Abstract: Shown is a gas sensor including a sensor element, a measurement chamber and an emitter element. The sensor element has a MEMS membrane which is arranged in a first substrate region. Furthermore, the measurement chamber is embodied to receive a measurement gas.
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公开(公告)号：US09714988B2
公开(公告)日：2017-07-25
申请号：US14514415
申请日：2014-10-15
Applicant: Infineon Technologies AG
Inventor： Markus Eckinger , Stefan Kolb , Alfons Dehe , Guenther Ruhl
CPC classification number: G01R33/072 , G01R33/0052 , H01L27/092 , H01L43/065 , H01L43/14
Abstract: A Hall Effect sensor with a graphene detection layer implemented in a variety of geometries, including the possibility of a so-called “full 3-d” Hall sensor, with the option for integration in a BiCMOS process and a method for producing said Hall Effect sensor is disclosed.
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