公开(公告)号：US11790217B2

公开(公告)日：2023-10-17

申请号：US16583201

申请日：2019-09-25

Applicant: Intel Corporation

Inventor： Ram Krishnamurthy ,  Gregory K. Chen ,  Raghavan Kumar ,  Phil Knag ,  Huseyin Ekin Sumbul

IPC: G06N3/063 ,  G06F7/523 ,  G06F9/38 ,  G06F9/30 ,  G06F7/509 ,  G06F7/544

CPC classification number: G06N3/063 ,  G06F7/5095 ,  G06F7/523 ,  G06F7/5443 ,  G06F9/30098 ,  G06F9/3893

Abstract: An apparatus is described. The apparatus includes a long short term memory (LSTM) circuit having a multiply accumulate circuit (MAC). The MAC circuit has circuitry to rely on a stored product term rather than explicitly perform a multiplication operation to determine the product term if an accumulation of differences between consecutive, preceding input values has not reached a threshold.

公开(公告)号：US11062203B2

公开(公告)日：2021-07-13

申请号：US15394897

申请日：2016-12-30

Applicant: Intel Corporation

Inventor： Gregory K. Chen ,  Raghavan Kumar ,  Huseyin Ekin Sumbul ,  Phil Knag ,  Ram K. Krishnamurthy

IPC: G06N3/063 ,  G06N3/04

Abstract: In one embodiment, a method comprises receiving a selection of a neural network topology type; identifying a synapse memory mapping scheme for the selected neural network topology type from a plurality of synapse memory mapping schemes that are each associated with a respective neural network topology type; and mapping a plurality of synapse weights to locations in a memory based on the identified synapse memory mapping scheme.

公开(公告)号：US11048434B2

公开(公告)日：2021-06-29

申请号：US16147024

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Raghavan Kumar ,  Phil Knag ,  Gregory K. Chen ,  Huseyin Ekin Sumbul ,  Sasikanth Manipatruni ,  Amrita Mathuriya ,  Abhishek Sharma ,  Ram Krishnamurthy ,  Ian A. Young

IPC: G11C11/419 ,  G06F3/06 ,  G04F10/00 ,  G11C13/00 ,  G11C11/418 ,  G11C7/10 ,  G11C11/54

Abstract: A memory circuit has compute-in-memory (CIM) circuitry that performs computations based on time-to-digital conversion (TDC). The memory circuit includes an array of memory cells addressable with column address and row address. The memory circuit includes CIM sense circuitry to sense a voltage for multiple memory cells triggered together. The CIM sense circuitry including a TDC circuit to convert a time for discharge of the multiple memory cells to a digital value. A processing circuit determines a value of the multiple memory cells based on the digital value.

公开(公告)号：US10956813B2

公开(公告)日：2021-03-23

申请号：US16147109

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Ian A. Young ,  Ram Krishnamurthy ,  Sasikanth Manipatruni ,  Gregory K. Chen ,  Amrita Mathuriya ,  Abhishek Sharma ,  Raghavan Kumar ,  Phil Knag ,  Huseyin Ekin Sumbul

IPC: G06N3/06 ,  G06N3/063 ,  G11C11/419 ,  G11C5/06 ,  H03M7/30 ,  G11C11/413 ,  G11C7/10 ,  G11C11/54 ,  G06N3/04

Abstract: An apparatus is described. The apparatus includes a compute in memory circuit. The compute in memory circuit includes a memory circuit and an encoder. The memory circuit is to provide 2m voltage levels on a read data line where m is greater than 1. The memory circuit includes storage cells sufficient to store a number of bits n where n is greater than m. The encoder is to receive an m bit input and convert the m bit input into an n bit word that is to be stored in the memory circuit, where, the m bit to n bit encoding performed by the encoder creates greater separation between those of the voltage levels that demonstrate wider voltage distributions on the read data line than others of the voltage levels.

公开(公告)号：US11663452B2

公开(公告)日：2023-05-30

申请号：US16583217

申请日：2019-09-25

Applicant: Intel Corporation

Inventor： Ram Krishnamurthy ,  Gregory K. Chen ,  Raghavan Kumar ,  Phil Knag ,  Huseyin Ekin Sumbul ,  Deepak Vinayak Kadetotad

IPC: G06F17/16 ,  G06N3/063 ,  G06F7/544 ,  G06N3/04

CPC classification number: G06N3/063 ,  G06F7/5443 ,  G06F17/16 ,  G06N3/04

Abstract: An apparatus is described. The apparatus includes a circuit to process a binary neural network. The circuit includes an array of processing cores, wherein, processing cores of the array of processing cores are to process different respective areas of a weight matrix of the binary neural network. The processing cores each include add circuitry to add only those weights of an i layer of the binary neural network that are to be effectively multiplied by a non zero nodal output of an i−1 layer of the binary neural network.

公开(公告)号：US11281963B2

公开(公告)日：2022-03-22

申请号：US15276111

申请日：2016-09-26

Applicant: INTEL CORPORATION

Inventor： Raghavan Kumar ,  Gregory K. Chen ,  Huseyin Ekin Sumbul ,  Phil Knag

IPC: G06N3/04 ,  G06N3/063 ,  G06N3/08

Abstract: An integrated circuit (IC), as a computation block of a neuromorphic system, includes a time step controller to activate a time step update signal for performing a time-multiplexed selection of a group of neuromorphic states to update. The IC includes a first circuitry to, responsive to detecting the time step update signal for a selected group of neuromorphic states: generate an outgoing data signal in response to determining that a first membrane potential of the selected group of neuromorphic states exceeds a threshold value, wherein the outgoing data signal includes an identifier that identifies the selected group of neuromorphic states and a memory address (wherein the memory address corresponds to a location in a memory block associated with the integrated circuit), and update a state of the selected group of neuromorphic states in response to generation of the outgoing data signal.

公开(公告)号：US11138499B2

公开(公告)日：2021-10-05

申请号：US16147176

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Abhishek Sharma ,  Jack T. Kavalieros ,  Ian A. Young ,  Sasikanth Manipatruni ,  Ram Krishnamurthy ,  Uygar Avci ,  Gregory K. Chen ,  Amrita Mathuriya ,  Raghavan Kumar ,  Phil Knag ,  Huseyin Ekin Sumbul ,  Nazila Haratipour ,  Van H. Le

IPC: G06N3/063 ,  H01L27/108 ,  H01L27/11502 ,  G06N3/04 ,  G06F17/16 ,  H01L27/11 ,  G11C11/54 ,  G11C7/10 ,  G11C11/419 ,  G11C11/409 ,  G11C11/22

Abstract: An apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The memory array includes an embedded dynamic random access memory (eDRAM) memory array. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The mathematical computation circuit includes a switched capacitor circuit. The switched capacitor circuit includes a back-end-of-line (BEOL) capacitor coupled to a thin film transistor within the metal/dielectric layers of the semiconductor chip. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The mathematical computation circuit includes an accumulation circuit. The accumulation circuit includes a ferroelectric BEOL capacitor to store a value to be accumulated with other values stored by other ferroelectric BEOL capacitors.

公开(公告)号：US11061646B2

公开(公告)日：2021-07-13

申请号：US16147004

申请日：2018-09-28

Applicant: Intel Corporation

Inventor： Huseyin Ekin Sumbul ,  Phil Knag ,  Gregory K. Chen ,  Raghavan Kumar ,  Abhishek Sharma ,  Sasikanth Manipatruni ,  Amrita Mathuriya ,  Ram Krishnamurthy ,  Ian A. Young

IPC: G06F7/544 ,  G11C8/10 ,  G11C8/08 ,  G11C7/12 ,  G11C11/4094 ,  G11C7/10 ,  G11C11/56 ,  G11C11/4091 ,  G06G7/16 ,  G11C11/419

Abstract: Compute-in memory circuits and techniques are described. In one example, a memory device includes an array of memory cells, the array including multiple sub-arrays. Each of the sub-arrays receives a different voltage. The memory device also includes capacitors coupled with conductive access lines of each of the multiple sub-arrays and circuitry coupled with the capacitors, to share charge between the capacitors in response to a signal. In one example, computing device, such as a machine learning accelerator, includes a first memory array and a second memory array. The computing device also includes an analog processor circuit coupled with the first and second memory arrays to receive first analog input voltages from the first memory array and second analog input voltages from the second memory array and perform one or more operations on the first and second analog input voltages, and output an analog output voltage.

公开(公告)号：US20180189645A1

公开(公告)日：2018-07-05

申请号：US15394897

申请日：2016-12-30

Applicant: Intel Corporation

Inventor： Gregory K. Chen ,  Raghavan Kumar ,  Huseyin Ekin Sumbul ,  Phil Knag ,  Ram K. Krishnamurthy

IPC: G06N3/063 ,  G06N3/04

CPC classification number: G06N3/0635 ,  G06N3/0445 ,  G06N3/049 ,  G06N3/063

Abstract: In one embodiment, a method comprises receiving a selection of a neural network topology type; identifying a synapse memory mapping scheme for the selected neural network topology type from a plurality of synapse memory mapping schemes that are each associated with a respective neural network topology type; and mapping a plurality of synapse weights to locations in a memory based on the identified synapse memory mapping scheme.

公开(公告)号：US20180089557A1

公开(公告)日：2018-03-29

申请号：US15276111

申请日：2016-09-26

Applicant: INTEL CORPORATION

Inventor： Raghavan Kumar ,  Gregory K. Chen ,  Huseyin Ekin Sumbul ,  Phil Knag

IPC: G06N3/063 ,  G06N3/08 ,  G06N3/04

CPC classification number: G06N3/049 ,  G06N3/063 ,  G06N3/088

Abstract: An integrated circuit (IC), as a computation block of a neuromorphic system, includes a time step controller to activate a time step update signal for performing a time-multiplexed selection of a group of neuromorphic states to update. The IC includes a first circuitry to, responsive to detecting the time step update signal for a selected group of neuromorphic states: generate an outgoing data signal in response to determining that a first membrane potential of the selected group of neuromorphic states exceeds a threshold value, wherein the outgoing data signal includes an identifier that identifies the selected group of neuromorphic states and a memory address (wherein the memory address corresponds to a location in a memory block associated with the integrated circuit), and update a state of the selected group of neuromorphic states in response to generation of the outgoing data signal.