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公开(公告)号:US12047485B2
公开(公告)日:2024-07-23
申请号:US17132365
申请日:2020-12-23
申请人: Intel Corporation
CPC分类号: H04L9/003 , G06F1/26 , H04L9/0631 , H04L2209/08
摘要: Apparatus and method for resisting side-channel attacks on cryptographic engines are described herein. An apparatus embodiment includes a cryptographic block coupled to a non-linear low-dropout voltage regulator (NL-LDO). The NL-LDO includes a scalable power train to provide a variable load current to the cryptographic block, randomization circuitry to generate randomized values for setting a plurality of parameters, and a controller to adjust the variable load current provided to the cryptographic block based on the parameters and the current voltage of the cryptographic block. The controller to cause a decrease in the variable load current when the current voltage is above a high voltage threshold, an increase in the variable load current when the current voltage is below a low voltage threshold; and a maximization of the variable load current when the current voltage is below an undervoltage threshold. The cryptographic block may be implemented with arithmetic transformations.
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公开(公告)号:US11768966B2
公开(公告)日:2023-09-26
申请号:US17930326
申请日:2022-09-07
申请人: Intel Corporation
发明人: Vikram Suresh , Raghavan Kumar , Sanu Mathew
CPC分类号: G06F21/75 , G06F21/31 , G06F21/79 , G06F2221/2103
摘要: A method comprises generating, during an enrollment process conducted in a controlled environment, a dark bit mask comprising a plurality of state information values derived from a plurality of entropy sources at a plurality of operating conditions for an electronic device, and using at least a portion of the plurality of state information values to generate a set of challenge-response pairs for use in an authentication process for the electronic device.
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公开(公告)号:US11663452B2
公开(公告)日:2023-05-30
申请号:US16583217
申请日:2019-09-25
申请人: Intel Corporation
发明人: Ram Krishnamurthy , Gregory K. Chen , Raghavan Kumar , Phil Knag , Huseyin Ekin Sumbul , Deepak Vinayak Kadetotad
CPC分类号: G06N3/063 , G06F7/5443 , G06F17/16 , G06N3/04
摘要: An apparatus is described. The apparatus includes a circuit to process a binary neural network. The circuit includes an array of processing cores, wherein, processing cores of the array of processing cores are to process different respective areas of a weight matrix of the binary neural network. The processing cores each include add circuitry to add only those weights of an i layer of the binary neural network that are to be effectively multiplied by a non zero nodal output of an i−1 layer of the binary neural network.
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公开(公告)号:US11456877B2
公开(公告)日:2022-09-27
申请号:US16456187
申请日:2019-06-28
申请人: Intel Corporation
发明人: Sanu Mathew , Manoj Sastry , Santosh Ghosh , Vikram Suresh , Andrew H. Reinders , Raghavan Kumar , Rafael Misoczki
摘要: A mechanism is described for facilitating unified accelerator for classical and post-quantum digital signature schemes in computing environments. A method includes unifying classical cryptography and post-quantum cryptography through a unified hardware accelerator hosted by a trusted platform of the computing device. The method may further include facilitating unification of a first finite state machine associated with the classical cryptography and a second finite state machine associated with the post-quantum cryptography though one or more of a single the hash engine, a set of register file banks, and a modular exponentiation engine.
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公开(公告)号:US20220200784A1
公开(公告)日:2022-06-23
申请号:US17132365
申请日:2020-12-23
申请人: Intel Corporation
摘要: Apparatus and method for resisting side-channel attacks on cryptographic engines are described herein. An apparatus embodiment includes a cryptographic block coupled to a non-linear low-dropout voltage regulator (NL-LDO). The NL-LDO includes a scalable power train to provide a variable load current to the cryptographic block, randomization circuitry to generate randomized values for setting a plurality of parameters, and a controller to adjust the variable load current provided to the cryptographic block based on the parameters and the current voltage of the cryptographic block. The controller to cause a decrease in the variable load current when the current voltage is above a high voltage threshold, an increase in the variable load current when the current voltage is below a low voltage threshold; and a maximization of the variable load current when the current voltage is below an undervoltage threshold. The cryptographic block may be implemented with arithmetic transformations.
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公开(公告)号:US11281963B2
公开(公告)日:2022-03-22
申请号:US15276111
申请日:2016-09-26
申请人: INTEL CORPORATION
摘要: An integrated circuit (IC), as a computation block of a neuromorphic system, includes a time step controller to activate a time step update signal for performing a time-multiplexed selection of a group of neuromorphic states to update. The IC includes a first circuitry to, responsive to detecting the time step update signal for a selected group of neuromorphic states: generate an outgoing data signal in response to determining that a first membrane potential of the selected group of neuromorphic states exceeds a threshold value, wherein the outgoing data signal includes an identifier that identifies the selected group of neuromorphic states and a memory address (wherein the memory address corresponds to a location in a memory block associated with the integrated circuit), and update a state of the selected group of neuromorphic states in response to generation of the outgoing data signal.
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公开(公告)号:US11138499B2
公开(公告)日:2021-10-05
申请号:US16147176
申请日:2018-09-28
申请人: Intel Corporation
发明人: Abhishek Sharma , Jack T. Kavalieros , Ian A. Young , Sasikanth Manipatruni , Ram Krishnamurthy , Uygar Avci , Gregory K. Chen , Amrita Mathuriya , Raghavan Kumar , Phil Knag , Huseyin Ekin Sumbul , Nazila Haratipour , Van H. Le
IPC分类号: G06N3/063 , H01L27/108 , H01L27/11502 , G06N3/04 , G06F17/16 , H01L27/11 , G11C11/54 , G11C7/10 , G11C11/419 , G11C11/409 , G11C11/22
摘要: An apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The memory array includes an embedded dynamic random access memory (eDRAM) memory array. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The mathematical computation circuit includes a switched capacitor circuit. The switched capacitor circuit includes a back-end-of-line (BEOL) capacitor coupled to a thin film transistor within the metal/dielectric layers of the semiconductor chip. Another apparatus is described. The apparatus includes a compute-in-memory (CIM) circuit for implementing a neural network disposed on a semiconductor chip. The CIM circuit includes a mathematical computation circuit coupled to a memory array. The mathematical computation circuit includes an accumulation circuit. The accumulation circuit includes a ferroelectric BEOL capacitor to store a value to be accumulated with other values stored by other ferroelectric BEOL capacitors.
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公开(公告)号:US11061646B2
公开(公告)日:2021-07-13
申请号:US16147004
申请日:2018-09-28
申请人: Intel Corporation
发明人: Huseyin Ekin Sumbul , Phil Knag , Gregory K. Chen , Raghavan Kumar , Abhishek Sharma , Sasikanth Manipatruni , Amrita Mathuriya , Ram Krishnamurthy , Ian A. Young
IPC分类号: G06F7/544 , G11C8/10 , G11C8/08 , G11C7/12 , G11C11/4094 , G11C7/10 , G11C11/56 , G11C11/4091 , G06G7/16 , G11C11/419
摘要: Compute-in memory circuits and techniques are described. In one example, a memory device includes an array of memory cells, the array including multiple sub-arrays. Each of the sub-arrays receives a different voltage. The memory device also includes capacitors coupled with conductive access lines of each of the multiple sub-arrays and circuitry coupled with the capacitors, to share charge between the capacitors in response to a signal. In one example, computing device, such as a machine learning accelerator, includes a first memory array and a second memory array. The computing device also includes an analog processor circuit coupled with the first and second memory arrays to receive first analog input voltages from the first memory array and second analog input voltages from the second memory array and perform one or more operations on the first and second analog input voltages, and output an analog output voltage.
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公开(公告)号:US10825511B2
公开(公告)日:2020-11-03
申请号:US16417538
申请日:2019-05-20
申请人: Intel Corporation
发明人: Vivek De , Sanu Mathew , Sudhir Satpathy , Vikram Suresh , Raghavan Kumar
IPC分类号: G11C11/419 , H04L9/32 , G09G5/00 , G06F7/58
摘要: Techniques and mechanisms for changing a consistency with which a cell circuit (“cell”) settles into a given state. In one embodiment, a cell settles into a preferred state based on a relative polarity between respective voltages of a first rail and a second rail. Based on the preferred state, a hot carrier injection (HCI) stress is applied to change a likelihood of the cell settling into the preferred state. Applying the HCI stress includes driving off-currents of two PMOS transistors of the cell while the relative polarity is reversed. In another embodiment, a cell array comprises multiple cells which are each classified as being a respective one of a physically unclonable function (PUF) type or a random number generator (RNG) type. A cell is selected for biasing, and a stress is applied, based on each of: that cell's preferred state, that cell's classification, and another cell's classification.
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公开(公告)号:US10705967B2
公开(公告)日:2020-07-07
申请号:US16160270
申请日:2018-10-15
申请人: Intel Corporation
发明人: Amrita Mathuriya , Sasikanth Manipatruni , Victor Lee , Huseyin Sumbul , Gregory Chen , Raghavan Kumar , Phil Knag , Ram Krishnamurthy , Ian Young , Abhishek Sharma
摘要: The present disclosure is directed to systems and methods of implementing a neural network using in-memory mathematical operations performed by pipelined SRAM architecture (PISA) circuitry disposed in on-chip processor memory circuitry. A high-level compiler may be provided to compile data representative of a multi-layer neural network model and one or more neural network data inputs from a first high-level programming language to an intermediate domain-specific language (DSL). A low-level compiler may be provided to compile the representative data from the intermediate DSL to multiple instruction sets in accordance with an instruction set architecture (ISA), such that each of the multiple instruction sets corresponds to a single respective layer of the multi-layer neural network model. Each of the multiple instruction sets may be assigned to a respective SRAM array of the PISA circuitry for in-memory execution. Thus, the systems and methods described herein beneficially leverage the on-chip processor memory circuitry to perform a relatively large number of in-memory vector/tensor calculations in furtherance of neural network processing without burdening the processor circuitry.
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