-
21.发明申请公开(公告)号：US20210175416A1
公开(公告)日：2021-06-10
申请号：US16840179
申请日：2020-04-03
Inventor： Jaewoo Jeong , Mahesh G. Samant , Yari Ferrante , Panagiotis Charilaos Filippou , Chirag Garg , Stuart Stephen Papworth Parkin
Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.
-
22.发明授权公开(公告)号：US12274179B2
公开(公告)日：2025-04-08
申请号：US17807485
申请日：2022-06-17
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Mahesh Samant , Ikhtiar , Jaewoo Jeong
Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.
-
公开(公告)号：US20250024756A1
公开(公告)日：2025-01-16
申请号：US18220231
申请日：2023-07-10
Inventor： Mahesh Samant , SERGEY FALEEV , Panagiotis Charilaos Filippou , Chirag Garg , Jaewoo Jeong
Abstract: A magnetoresistive random-access memory cell includes a templating layer, including a binary alloy having an alternating layer lattice structure, and a half metallic Heusler multilayer structure including a plurality of layers of two different Heusler compounds, at least one of which is half metallic. The half metallic Heusler multilayer structure is located outward of the templating layer and exhibits perpendicular magnetic anisotropy (PMA). A tunnel barrier is outward of the half metallic Heusler multilayer structure, and a magnetic layer is outward of the tunnel barrier.
-
24.发明公开公开(公告)号：US20240349619A1
公开(公告)日：2024-10-17
申请号：US18218920
申请日：2023-07-06
Inventor： Jaewoo Jeong , Tiar Ikhtiar , Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Mahesh Govind Samant
CPC classification number: H10N50/80 , H01F10/3254 , H01F10/3272 , H10B61/00 , H10N50/01 , H10N50/20 , H10N50/85
Abstract: A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).
-
25.发明公开公开(公告)号：US20240347089A1
公开(公告)日：2024-10-17
申请号：US18348087
申请日：2023-07-06
Inventor： Jaewoo Jeong , Tiar Ikhtiar , Panagiotis Charilaos Filippou , Chirag Garg , Mahesh Govind Samant
CPC classification number: G11C11/161 , H01F10/3272 , H01F10/3286 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85
Abstract: A magnetic random-access memory (MRAM) device includes a substrate, a bottom magnetic reference layer on the substrate, a tunnel barrier layer above the bottom magnetic reference layer, and a top magnetic free layer above the tunnel barrier layer. The top magnetic free layer includes a chemical templating layer on the tunnel barrier layer and a magnetic layer on the chemical templating layer. The chemical templating layer includes a binary alloy of FeyX which may have a BiF3 prototype structure in which y is in a range from 0.9 to 3.3, and the magnetic layer includes a Heusler compound having substantially perpendicular magnetic anisotropy.
-
Patent Agency Ranking
26.发明授权公开(公告)号：US11665979B2
公开(公告)日：2023-05-30
申请号：US16840179
申请日：2020-04-03
Inventor： Jaewoo Jeong , Mahesh G. Samant , Yari Ferrante , Panagiotis Charilaos Filippou , Chirag Garg , Stuart Stephen Papworth Parkin
CPC classification number: H01L43/10 , G11C11/161 , H01F10/329 , H01F10/3254 , H01F10/3286 , H01F41/32 , H01L27/228 , H01L43/02 , H01L43/12
Abstract: A method for providing a magnetic device and the magnetic device so provided are described. The magnetic device includes a magnetic layer having a surface. In some aspects, the magnetic layer is a free layer, a reference layer, or a top layer thereof. A tunneling barrier layer is deposited on the magnetic layer. At least a portion of the tunneling barrier layer adjacent to the magnetic layer is deposited at a deposition angle of at least thirty degrees from a normal to the surface of the magnetic layer. In some aspects, the deposition angle is at least fifty degrees.
-
公开(公告)号：US11538987B2
公开(公告)日：2022-12-27
申请号：US17100723
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L10 compound.
-
公开(公告)号：US20220165939A1
公开(公告)日：2022-05-26
申请号：US17100726
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A device including a templating structure and a magnetic layer is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The magnetic layer is on the templating structure and includes at least one of a Heusler compound and an L10 compound. The magnetic layer is in contact with the templating structure and being magnetic at room temperature.
-
29.发明授权公开(公告)号：US10957848B2
公开(公告)日：2021-03-23
申请号：US16271721
申请日：2019-02-08
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S. P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).
-
30.发明授权公开(公告)号：US10916282B2
公开(公告)日：2021-02-09
申请号：US16447753
申请日：2019-06-20
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Timothy Phung , Chirag Garg
IPC: G11C11/00 , G11C11/16 , H01F10/32 , H01L43/04 , H03K19/20 , H03K19/18 , H01L43/10 , H01L27/22 , G11C11/18 , H01L43/06
Abstract: A three-terminal device is disclosed having a magnetic tunnel junction (MTJ) and a spin orbit torque (SOT) generating layer. The MTJ has a first magnetic layer, a tunnel barrier layer underlying the first magnetic layer, and a second magnetic layer underlying the tunnel barrier, wherein the SOT generating layer is directly underlying the second magnetic layer. The second magnetic layer has a shape that is non-symmetrical, such that an average magnetization of a remnant state associated with the second magnetic layer has an in-plane component that is orthogonal to a current direction in the SOT generating layer.
-
-
-
-
-
-
-
-
-
Search Results
30
records
(took 0.02 seconds)
