-
公开(公告)号：US12136447B2
公开(公告)日：2024-11-05
申请号：US17710399
申请日：2022-03-31
Inventor： Sergey Faleev , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Jaewoo Jeong
Abstract: A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic half-Heusler layer including a half metallic half-Heusler material having a tetragonal lattice structure. The half metallic half-Heusler layer is located outward of the templating layer, and has a half-Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic half-Heusler material. A tunnel barrier is located outward of the half metallic half-Heusler layer, and a magnetic layer is located outward of the tunnel barrier.
-
2.发明公开公开(公告)号：US20230413681A1
公开(公告)日：2023-12-21
申请号：US17807485
申请日：2022-06-17
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , See-Hun Yang , Mahesh Samant , . Ikhtiar , Jaewoo Jeong
CPC classification number: H01L43/02 , H01L27/222 , H01L43/10 , H01L43/12
Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, and a computer system. The MRAM stack includes a first magnetic layer comprising a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure having a crystalline structure configured to template the Heusler compound. The magnetic layer is formed over the templating structure. The MRAM stack also includes a chromium (Cr) layer formed under the templating structure. The Cr layer is configured to enhance a tunnel magnetoresistance (TMR) of the MRAM stack.
-
3.发明公开公开(公告)号：US20240155950A1
公开(公告)日：2024-05-09
申请号：US18179588
申请日：2023-03-07
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Mahesh Samant , . Ikhtiar , Jaewoo Jeong
Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and an MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a multi-layer templating structure that includes a crystalline structure configured to template the Heusler compound and enhance a tunnel magnetoresistance (TMR) of the MRAM stack. The first magnetic layer is formed over the multi-layer templating structure. The multi-layer templating structure includes a layer of a first binary alloy including tungsten-aluminum (WAl), and a layer of a second binary alloy having a cesium-chloride (CsCl) structure. The second binary alloy overlays the first binary alloy.
-
公开(公告)号：US20220165469A1
公开(公告)日：2022-05-26
申请号：US17100719
申请日：2020-11-20
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Stuart Stephen Papworth Parkin , Mahesh Samant
Abstract: A device including a templating structure and a magnetic layer on the templating structure is described. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. Further, E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir, D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. The magnetic layer includes at least one of a Heusler compound and an L10 compound, the magnetic layer being in contact with the templating structure.
-
5.发明申请公开(公告)号：US20210167280A1
公开(公告)日：2021-06-03
申请号：US17174680
申请日：2021-02-12
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S.P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.
-
Patent Agency Ranking
公开(公告)号：US12094508B1
公开(公告)日：2024-09-17
申请号：US18509818
申请日：2023-11-15
Inventor： See-Hun Yang , Mahesh Govind Samant , Panagiotis Charilaos Filippou , Chirag Garg , Fnu Ikhtiar , Jaewoo Jeong
CPC classification number: G11C11/161 , H01F10/329 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85
Abstract: Methods and apparatuses are provided for MRAM devices utilizing spin transfer torque. A device includes a substrate; an MTJ formed over the substrate, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; and a PSM layer formed over the free layer of the MTJ. The PSM layer, i.e., a chiral material layer, may be formed adject to a free layer (or adjacent to a TBL, which is adjacent to the free layer) of the MTJ, providing an additional source of spin-transfer-torque, and providing MTJ devices that are operable with lower switching current.
-
7.发明公开公开(公告)号：US20240306517A1
公开(公告)日：2024-09-12
申请号：US18179646
申请日：2023-03-07
Inventor： Chirag Garg , Panagiotis Charilaos Filippou , See-Hun Yang , Mahesh Samant , Ikhtiar , Jaewoo Jeong
CPC classification number: H10N50/85 , H01L23/5283 , H01L25/16 , H10B61/10 , H10B61/22 , H10B80/00 , H10N50/01 , H10N50/10
Abstract: A magnetic random access memory (MRAM) stack, a method of fabricating a MRAM stack, a MRAM array, a computer system, and a MRAM device. The MRAM stack includes a first magnetic layer including a Heusler compound. The MRAM stack also includes one or more seed layers including a templating structure that includes a crystalline structure configured to template the Heusler compound. The first magnetic layer is formed over the templating structure. The templating structure includes a layer of a first binary alloy including platinum-aluminum (PtAl).
-
8.发明授权公开(公告)号：US11925124B2
公开(公告)日：2024-03-05
申请号：US17217766
申请日：2021-03-30
Inventor： Jaewoo Jeong , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Ikhtiar , Dmytro Apalkov
IPC: H10N50/80 , G11C11/16 , H01F10/193 , H01F10/30 , H01F10/32 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85
CPC classification number: H10N50/80 , G11C11/161 , H01F10/1936 , H01F10/30 , H10B61/00 , H10N50/01 , H10N50/10 , H10N50/85 , H01F10/3254 , H01F10/3268
Abstract: A magnetic structure, a magnetic device incorporating the magnetic structure and a method for providing the magnetic structure are described. The magnetic structure includes a magnetic layer, a templating structure and a resistive insertion layer. The magnetic layer includes a Heusler compound and has a perpendicular magnetic anisotropy energy exceeding an out-of-plane demagnetization energy. The templating structure has a crystal structure configured to template at least one of the Heusler compound and the resistive insertion layer. The magnetic layer is on the templating structure. The resistive insertion layer is configured to reduce magnetic damping for the Heusler compound and allow for templating of the Heusler compound.
-
公开(公告)号：US20230317129A1
公开(公告)日：2023-10-05
申请号：US17710399
申请日：2022-03-31
Inventor： SERGEY FALEEV , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Jaewoo Jeong
CPC classification number: G11C11/161 , G11C11/1655 , G11C11/1657 , H01L43/12 , H01L43/08 , H01L43/10 , H01L27/228
Abstract: A magnetoresistive random-access memory cell includes a templating layer. The templating layer includes a binary alloy having an alternating layer lattice structure. The cell further includes a half metallic half-Heusler layer including a half metallic half-Heusler material having a tetragonal lattice structure. The half metallic half-Heusler layer is located outward of the templating layer, and has a half-Heusler in-plane lattice constant that is different from an in-plane lattice constant in a cubic form of the half metallic half-Heusler material. A tunnel barrier is located outward of the half metallic half-Heusler layer, and a magnetic layer is located outward of the tunnel barrier.
-
公开(公告)号：US20230180624A1
公开(公告)日：2023-06-08
申请号：US17688196
申请日：2022-03-07
Inventor： Sergey Faleev , Panagiotis Charilaos Filippou , Yari Ferrante , Chirag Garg , Mahesh Samant , Jaewoo Jeong
CPC classification number: H01L43/08 , H01L43/10 , H01L43/02 , G11C11/161 , H01L27/222
Abstract: Integrated circuit devices may include a first magnetic layer, a second magnetic layer, and a tunnel barrier layer that is between the first magnetic layer and the second magnetic layer and has a hexagonal crystal structure. The first magnetic layer may include a multi-layered structure of nCo/mX that is magnetic at room temperature and has a hexagonal crystal structure, and X may be Ni, Ag, Au, Pt, Pd or Cu. n and m are each numbers of atomic layers, n may range from 0.5 to 3.5, and m may range from 0.5 to 4.5.
-
-
-
-
-
-
-
-
-
Search Results
30
records
(took 0.022 seconds)
