公开(公告)号：US20150247259A1

公开(公告)日：2015-09-03

申请号：US14711403

申请日：2015-05-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： BAHMAN HEKMATSHOAR-TABARI ,  ALI KHAKIFIROOZ ,  ALEXANDER REZNICEK ,  DEVENDRA K. SADANA ,  GHAVAM G. SHAHIDI ,  DAVOOD SHAHRJERDI

IPC: C30B25/18 ,  C30B29/06 ,  C30B25/10

Abstract: An epitaxy method includes providing an exposed crystalline region of a substrate material. Silicon is epitaxially deposited on the substrate material in a low temperature process wherein a deposition temperature is less than 500 degrees Celsius. A source gas is diluted with a dilution gas with a gas ratio of dilution gas to source gas of less than 1000.

Abstract translation: 外延生长方法包括提供衬底材料的暴露的结晶区域。 硅在低温工艺中外延沉积在衬底材料上，其中淀积温度低于500摄氏度。 源气体用稀释气体稀释，稀释气体与原料气体的气体比小于1000。

公开(公告)号：US20140227824A1

公开(公告)日：2014-08-14

申请号：US13966781

申请日：2013-08-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： TZE-CHIANG CHEN ,  BAHMAN HEKMATSHOARTABARI ,  DEVENDRA K. SADANA ,  DAVOOD SHAHRJERDI

IPC: H01L31/18 ,  H01L31/20

CPC classification number: H01L31/202 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0747 ,  Y02E10/50

Abstract: A photovoltaic device includes a crystalline substrate having a first dopant conductivity, an interdigitated back contact and a front surface field structure. The front surface field structure includes a crystalline layer formed on the substrate and a noncrystalline layer formed on the crystalline layer. The crystalline layer and the noncrystalline layer are doped with dopants having an opposite dopant conductivity from that of the substrate. Methods are also disclosed.

公开(公告)号：US20140103485A1

公开(公告)日：2014-04-17

申请号：US13654040

申请日：2012-10-17

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： GREGORY M. FRITZ ,  BAHMAN HEKMATSHOARTABARI ,  ALI KHAKIFIROOZ ,  DIRK PFEIFFER ,  KENNETH P. RODBELL ,  DAVOOD SHAHRJERDI

IPC: H01L23/525

CPC classification number: H01L23/5252 ,  H01L23/576 ,  H01L27/24 ,  H01L27/2472 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure relates to an antifuse for preventing a flow of electrical current in an integrated circuit. One such antifuse includes a reactive material and a silicon region thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state. Another such antifuse includes a reactive material, at least one metal and a silicon region adjacent to the at least one metal and thermally coupled to the reactive material, where an electrical current to the reactive material causes the reactive material to release heat which transitions the silicon region from a high resistance state to a low resistance state.

Abstract translation: 本公开涉及用于防止集成电路中的电流流动的反熔丝。 一种这样的反熔丝包括反应性材料和热耦合到反应性材料的硅区域，其中到反应性材料的电流导致反应性材料释放热量，其将硅区域从高电阻状态转变到低电阻状态。 另一种这样的反熔丝包括反应性材料，与至少一种金属相邻并且与反应性材料相邻的至少一个金属和硅区域，其中到反应性材料的电流导致反应性材料释放热量，其转移硅 区域从高电阻状态到低电阻状态。