公开(公告)号：US20160079451A1

公开(公告)日：2016-03-17

申请号：US14483584

申请日：2014-09-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John J. ELLIS-MONAGHAN ,  Jeffrey P. GAMBINO ,  Mark D. JAFFE ,  Kirk D. PETERSON

IPC: H01L31/0232 ,  H01L31/18 ,  H01L31/103 ,  H01L31/02 ,  H01L31/028

CPC classification number: H01L31/1872 ,  G02B6/12 ,  G02B6/12004 ,  H01L31/02005 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1864 ,  H01L2223/6627 ,  H01P1/172 ,  H01P3/16 ,  Y02E10/50

Abstract: Photodiode structures and methods of manufacture are disclosed. The method includes forming a waveguide structure in a dielectric layer. The method further includes forming a Ge material in proximity to the waveguide structure in a back end of the line (BEOL) metal layer. The method further includes crystallizing the Ge material into a crystalline Ge structure by a low temperature annealing process with a metal layer in contact with the Ge material.

Abstract translation: 公开了光电二极管结构和制造方法。 该方法包括在电介质层中形成波导结构。 该方法还包括在线（BEOL）金属层的后端中形成靠近波导结构的Ge材料。 该方法还包括通过与Ge材料接触的金属层的低温退火工艺将Ge材料结晶成晶体Ge结构。