Multiple cryogenic systems sectioned within a common vacuum space

    公开(公告)号:US11802663B2

    公开(公告)日:2023-10-31

    申请号:US17144964

    申请日:2021-01-08

    CPC classification number: F17C3/085 F17C2203/0391

    Abstract: Techniques facilitating multiple cryogenic systems sectioned within a common vacuum space are provided. In one example, a cryostat can comprise a plurality of thermal stages and a thermal switch. The plurality of thermal stages can intervene between a 4-Kelvin (K) stage and a Cold Plate stage. The plurality of thermal stages can include a Still stage and an intermediate thermal stage that can be directly coupled mechanically to the Still stage via a support rod. The thermal switch can be coupled to the intermediate thermal stage and an adjacent thermal stage. The thermal switch can facilitate modifying a thermal profile of the cryostat by providing a switchable thermal path between the intermediate thermal stage and the adjacent thermal stage.

    SUPERCONDUCTOR-SEMICONDUCTOR JOSEPHSON JUNCTION

    公开(公告)号:US20230133709A1

    公开(公告)日:2023-05-04

    申请号:US18148145

    申请日:2022-12-29

    Abstract: A gated Josephson junction includes a substrate and a vertical Josephson junction formed on the substrate and extending substantially normal the substrate. The vertical Josephson junction includes a first superconducting layer, a semiconducting layer, and a second superconducting layer. The first superconducting layer, the semiconducting layer, and the second superconducting layer form a stack that is substantially perpendicular to the substrate. The gated Josephson junction includes a gate dielectric layer in contact with the first superconducting layer, the semiconducting layer, and the second superconducting layer at opposing side surfaces of the vertical Josephson junction, and a gate electrically conducting layer in contact with the gate dielectric layer. The gate electrically conducting layer is separated from the vertical Josephson junction by the gate dielectric layer. In operation, a voltage applied to the gate electrically conducting layer modulates a current through the semiconducting layer of the vertical Josephson junction.

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