CONTACTLESS SCREENING OF A QUBIT
    3.
    发明申请

    公开(公告)号:US20210148947A1

    公开(公告)日:2021-05-20

    申请号:US17137009

    申请日:2020-12-29

    Abstract: Systems, devices, computer-implemented methods, and computer program products to facilitate contactless screening of a qubit are provided. According to an embodiment, a system can comprise a memory that stores computer executable components and a processor that executes the computer executable components stored in the memory. The computer executable components can comprise a scanner component that establishes a direct microwave coupling of a scanning probe device to a qubit of a quantum device. The computer executable components can further comprise a parameter extraction component that determines qubit frequency of the qubit based on the direct microwave coupling.

    Symmetrical qubits with reduced far-field radiation

    公开(公告)号:US10957737B2

    公开(公告)日:2021-03-23

    申请号:US16735851

    申请日:2020-01-07

    Abstract: Symmetrical qubits with reduced far-field radiation are provided. In one example, a qubit device includes a first group of superconducting capacitor pads positioned about a defined location of the qubit device, wherein the first group of superconducting capacitor pads comprise two or more superconducting capacitor pads having a first polarity, and a second group of superconducting capacitor pads positioned about the defined location of the qubit device in an alternating arrangement with the first group of superconducting capacitor pads, wherein the second group of superconducting capacitor pads comprise two or more superconducting capacitor pads having a second polarity that is opposite the first polarity.

    TRANSMON QUBITS WITH TRENCHED CAPACITOR STRUCTURES

    公开(公告)号:US20200328338A1

    公开(公告)日:2020-10-15

    申请号:US16381563

    申请日:2019-04-11

    Abstract: A qubit includes a substrate, and a first capacitor structure having a lower portion formed on a surface of the substrate and at least one first raised portion extending above the surface of the substrate. The qubit further includes a second capacitor structure having a lower portion formed on the surface of the substrate and at least one second raised portion extending above the surface of the substrate. The first capacitor structure and the second capacitor structure are formed of a superconducting material. The qubit further includes a junction between the first capacitor structure and the second capacitor structure. The junction is disposed at a predetermined distance from the surface of the substrate and has a first end in contact with the first raised portion and a second end in contact with the second raised portion.

    SYMMETRICAL QUBITS WITH REDUCED FAR-FIELD RADIATION

    公开(公告)号:US20200043977A1

    公开(公告)日:2020-02-06

    申请号:US16054326

    申请日:2018-08-03

    Abstract: Symmetrical qubits with reduced far-field radiation are provided. In one example, a qubit device includes a first group of superconducting capacitor pads positioned about a defined location of the qubit device, wherein the first group of superconducting capacitor pads comprise two or more superconducting capacitor pads having a first polarity, and a second group of superconducting capacitor pads positioned about the defined location of the qubit device in an alternating arrangement with the first group of superconducting capacitor pads, wherein the second group of superconducting capacitor pads comprise two or more superconducting capacitor pads having a second polarity that is opposite the first polarity.

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