摘要:
An embodiment includes a tie-off circuit includes multiple field effect transistors (FETs), and a node isolation circuit that is connected to a first output node and a second output node of the tie-off circuit. The node isolation circuit consists of a first FET with a third output node and a second FET with a fourth output node. The second output node includes a logical LO node and is coupled to a gate of the first FET and generates a TIE HI output.
摘要:
A limited switch dynamic logic (LSDL) circuit includes a dynamic logic circuit and a static logic circuit. The dynamic logic circuit includes a precharge device configured to precharge a dynamic node during a precharge phase of a first evaluation clock signal and a second evaluation clock signal. A first evaluation tree is configured to evaluate the dynamic node to a first logic value in response to one or more first input signals during an evaluation phase of the first evaluation clock signal. A second evaluation tree is configured to evaluate the dynamic node to a second logic value in response to one or more second input signals during an evaluation phase of the second evaluation clock signal. A static logic circuit is configured to provide an output of the LSDL circuit in response to the dynamic node according to an output latch clock signal.
摘要:
An array of rows and columns of SMT MRAM cells has each of the columns associated with one of its adjacent columns. Each of the SMT MRAM cells of the column is connected to a true data bit line and each of the SMT MRAM cells of the associated pair of columns is connected to a shared complement data bit line. A shunting switch device is connected between each of the true data bit lines and the shared complement data bit line for selectively connecting one of the true data bit lines to the shared complement data bit line to effectively reduce the resistance of the complement data bit line and to eliminate program disturb effects in adjacent non-selected columns of the SMT MRAM cells.
摘要:
A limited switch dynamic logic (LSDL) circuit includes a dynamic logic circuit and a static logic circuit. The dynamic logic circuit includes a precharge device configured to precharge a dynamic node during a precharge phase of a first evaluation clock signal and a second evaluation clock signal. A first evaluation tree is configured to evaluate the dynamic node to a first logic value in response to one or more first input signals during an evaluation phase of the first evaluation clock signal. A second evaluation tree is configured to evaluate the dynamic node to a second logic value in response to one or more second input signals during an evaluation phase of the second evaluation clock signal. A static logic circuit is configured to provide an output of the LSDL circuit in response to the dynamic node according to an output latch clock signal.
摘要:
An array of rows and columns of SMT MRAM cells has each of the columns associated with one of its adjacent columns. Each of the SMT MRAM cells of the column is connected to a true data bit line and each of the SMT MRAM cells of the associated pair of columns is connected to a shared complement data bit line. A shunting switch device is connected between each of the true data bit lines and the shared complement data bit line for selectively connecting one of the true data bit lines to the shared complement data bit line to effectively reduce the resistance of the complement data bit line and to eliminate program disturb effects in adjacent non-selected columns of the SMT MRAM cells.
摘要:
An array of rows and columns of SMT MRAM cells has each of the columns associated with one of its adjacent columns. Each of the SMT MRAM cells of the column is connected to a true data bit line and each of the SMT MRAM cells of the associated pair of columns is connected to a shared complement data bit line. A shunting switch device is connected between each of the true data bit lines and the shared complement data bit line for selectively connecting one of the true data bit lines to the shared complement data bit line to effectively reduce the resistance of the complement data bit line and to eliminate program disturb effects in adjacent non-selected columns of the SMT MRAM cells.
摘要:
A system and method for supporting an interconnection of processor cores, each core with functional state monitors for monitoring operations of each processor core, the processor cores interconnected using a resistive network connected between two-terminal regions being embedded in the resistive network such that each terminal of a region may be connected by controllable resistors to one or both fixed rails or by controllable resistors to one or more intermediate nodes. The resistor values are configurable to provide indirect control of the voltages across each two-terminal region, allowing full dynamic control of voltages of the two-terminal regions in a range up to the full voltage between the two voltage rails, and where a management unit accesses the functional state monitors and controls the resistor values. Feedback from functional state monitors allow the operating frequency to extend down to arbitrarily low values and up to the limits imposed by the technology.
摘要:
A two-stage gated-diode sense amplifier includes a first transistor connected to an input node, a second transistor connected to a boost node, the input node and a setting line, a first inverter including a third transistor connected to a power supply voltage (VDD), a first output corresponding to the first inverter and the setting line, and a fourth transistor connected to ground, the first output and the setting line, a fifth transistor connected to the first output, the first transistor and the boost node, and a second associated with a second output corresponding to the second inverter, the second inverter including a sixth transistor connected to VDD, the second output and the first output, and a seventh transistor connected to ground, the second output and the first output.
摘要:
A sense amplifier includes a first transistor having a source/drain connected to a data line, a drain/source connected to a first node and a gate connected to a setting line. The sense amplifier further includes a second transistor having a source/drain connected to ground or a power supply voltage, a drain/source connected to a second node and a gate connected to the setting line.
摘要:
Described is a neuromorphic system implemented in hardware that implements neuron membrane potential update based on the leaky integrate and fire (LIF) model. The system further models synapse weights update based on the spike time-dependent plasticity (STDP) model. The system includes an artificial neural network in which the update scheme of neuron membrane potential and synapse weight are effectively defined and implemented.