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21.发明申请Solid-state image pickup device with CMOS image sensor having amplified pixel arrangement 审中-公开具有CMOS图像传感器的固态图像拾取装置具有放大的像素排列公开(公告)号：US20050151867A1
公开(公告)日：2005-07-14
申请号：US11012274
申请日：2004-12-16
申请人： Hiroshige Goto , Ikuko Inoue
发明人： Hiroshige Goto , Ikuko Inoue
CPC分类号： H04N5/363 , H04N5/3741
摘要： A solid-state image pickup device includes a photodiode, a floating gate transistor, a control circuit, a switching circuit, a reset circuit, and a potential sensing circuit. The photodiode collects and stores signal charges generated in accordance with an amount of incident light. The floating gate transistor has a gate that is placed into one of a floating state and a connecting state and a channel formed under the gate. The channel stores the signal charges. The control circuit controls a transfer of the signal charges between the photodiode and the floating gate transistor. The switching circuit switches the gate of the floating gate transistor from the connecting state to the floating state with given timing. The reset circuit releases the signal charges from the channel of the floating gate transistor. The potential sensing circuit senses a potential of the gate of the floating gate transistor.
摘要翻译： 固态摄像装置包括光电二极管，浮栅晶体管，控制电路，开关电路，复位电路和电位检测电路。 光电二极管收集并存储根据入射光量产生的信号电荷。 浮栅晶体管具有放置在浮置状态和连接状态之一的栅极以及形成在栅极下方的沟道。 通道存储信号电荷。 控制电路控制光电二极管和浮栅晶体管之间的信号电荷的转移。 开关电路以给定的定时将浮栅晶体管的栅极从连接状态切换到浮置状态。 复位电路从浮栅晶体管的沟道释放信号电荷。 电位感测电路感测浮栅晶体管的栅极的电位。
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公开(公告)号：US5463232A
公开(公告)日：1995-10-31
申请号：US43632
申请日：1993-04-08
IPC分类号： H01L27/14 , H01L27/148 , H01L29/10 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/359 , H04N5/361 , H04N5/367 , H04N5/369 , H04N5/3728 , H01L29/68 , H01L31/00
CPC分类号： H01L29/1062 , H01L27/14831
摘要： A solid-state imaging device includes an array of photosensitive cells, each of which includes a photoelectric conversion section, which is arranged on the surface of a substrate and has a light-receiving opening. The photoelectric conversion section generates a packet of electrical carriers in response to the amount of incident light thereinto through the opening. A charge transfer section is arranged adjacent to the photoelectric conversion section on the substrate surface. This transfer section defines thereunder a transfer channel region that extends linearly in a predetermined direction in the substrate surface, and causes the carriers thus obtained to move sequentially. A light-shield section is arranged to cover the photoelectric conversion section except the opening, for preventing an incident light coming through the opening from being introduced into the transfer channel region as a leak component, by cutting off an internal reflection path of the leak component thereto.
摘要翻译： 固态成像装置包括光敏电池阵列，每个光敏单元包括光电转换部分，该光电转换部分布置在基板的表面上并具有光接收开口。 光电转换部分响应于通过该开口的入射光量而产生电载体的分组。 在基板表面上与光电转换部相邻配置电荷转移部。 该转印部分限定在基板表面中沿预定方向线性延伸的转移通道区域，并且使由此获得的载体依次移动。 遮光部被配置为将除了开口部之外的光电转换部覆盖，以防止通过开口的入射光作为泄漏部件被引入到传送通道区域，通过切断泄漏部件的内部反射路径 到此。
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公开(公告)号：US07355158B2
公开(公告)日：2008-04-08
申请号：US11826926
申请日：2007-07-19
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
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24.发明授权Solid state imaging device having a photodiode and a MOSFET and method of manufacturing the same 失效具有光电二极管和MOSFET的固态成像装置及其制造方法公开(公告)号：US06642087B2
公开(公告)日：2003-11-04
申请号：US10339395
申请日：2003-01-10
IPC分类号： H01L2100
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/14654
摘要： A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
摘要翻译： 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区，在其另一端形成N型信号存储区。 在信号存储区域选择性地外延生长P +型表面屏蔽区域，并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。
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公开(公告)号：US20070262241A1
公开(公告)日：2007-11-15
申请号：US11826927
申请日：2007-07-19
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
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公开(公告)号：US07482570B2
公开(公告)日：2009-01-27
申请号：US11826927
申请日：2007-07-19
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
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公开(公告)号：US20070262240A1
公开(公告)日：2007-11-15
申请号：US11826926
申请日：2007-07-19
IPC分类号： H01L27/00
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate; a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。
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公开(公告)号：US07262396B2
公开(公告)日：2007-08-28
申请号：US10287707
申请日：2002-11-05
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.
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公开(公告)号：US06570222B2
公开(公告)日：2003-05-27
申请号：US09801919
申请日：2001-03-09
IPC分类号： H01L2701
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/14654
摘要： A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.
摘要翻译： 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区，在其另一端形成N型信号存储区。 在信号存储区域上选择性地外延生长P +型表面屏蔽区域，并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。
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公开(公告)号：US06987537B2
公开(公告)日：2006-01-17
申请号：US09824774
申请日：2001-04-04
申请人： Ikuko Inoue
发明人： Ikuko Inoue
IPC分类号： H04N5/335
CPC分类号： H04N5/335 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14692
摘要： The image pickup system includes: MOS sensors arranged in an image pickup region of a semiconductor substrate in the form of a matrix and having photoelectric transfer layers; a peripheral circuit part formed in a region of the semiconductor substrate except for the image pickup region and having a driving circuit for driving the MOS sensors and a signal processing circuit for processing output signals from the MOS sensors; and microlenses, formed on the photoelectric transfer layers via a first insulating film, for condensing picture signals on the photoelectric transfer layers, wherein the driving circuit and the signal processing circuit in the peripheral circuit part are covered by a second insulating film, and the distance between the surface of the first insulating film and the semiconductor substrate is shorter than the distance between the surface of a second insulating film and the semiconductor substrate.
摘要翻译： 图像拾取系统包括：MOS传感器，布置在矩阵形式的半导体衬底的摄像区域中并具有光电转移层; 外围电路部分形成在除了摄像区域之外的半导体衬底的区域中并且具有用于驱动MOS传感器的驱动电路和用于处理来自MOS传感器的输出信号的信号处理电路; 和微透镜，其经由第一绝缘膜形成在光电转移层上，用于聚集光电转移层上的图像信号，其中外围电路部分中的驱动电路和信号处理电路被第二绝缘膜覆盖，并且距离 在第一绝缘膜的表面和半导体衬底之间的距离比第二绝缘膜的表面和半导体衬底之间的距离短。
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