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    Solid-state imaging device with internal smear eliminator
    1.
    发明授权
    Solid-state imaging device with internal smear eliminator 失效
    具有内部抹污消除器的固态成像装置

    公开(公告)号：US5463232A

    公开(公告)日：1995-10-31

    申请号：US43632

    申请日：1993-04-08

    申请人： Hirofumi Yamashita ,  Ikuko Inoue ,  Michio Sasaki ,  Ryohei Miyagawa

    发明人： Hirofumi Yamashita ,  Ikuko Inoue ,  Michio Sasaki ,  Ryohei Miyagawa

    IPC分类号： H01L27/14 ,  H01L27/148 ,  H01L29/10 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/359 ,  H04N5/361 ,  H04N5/367 ,  H04N5/369 ,  H04N5/3728 ,  H01L29/68 ,  H01L31/00

    CPC分类号： H01L29/1062 ,  H01L27/14831

    摘要： A solid-state imaging device includes an array of photosensitive cells, each of which includes a photoelectric conversion section, which is arranged on the surface of a substrate and has a light-receiving opening. The photoelectric conversion section generates a packet of electrical carriers in response to the amount of incident light thereinto through the opening. A charge transfer section is arranged adjacent to the photoelectric conversion section on the substrate surface. This transfer section defines thereunder a transfer channel region that extends linearly in a predetermined direction in the substrate surface, and causes the carriers thus obtained to move sequentially. A light-shield section is arranged to cover the photoelectric conversion section except the opening, for preventing an incident light coming through the opening from being introduced into the transfer channel region as a leak component, by cutting off an internal reflection path of the leak component thereto.

    摘要翻译： 固态成像装置包括光敏电池阵列，每个光敏单元包括光电转换部分，该光电转换部分布置在基板的表面上并具有光接收开口。 光电转换部分响应于通过该开口的入射光量而产生电载体的分组。 在基板表面上与光电转换部相邻配置电荷转移部。 该转印部分限定在基板表面中沿预定方向线性延伸的转移通道区域，并且使由此获得的载体依次移动。 遮光部被配置为将除了开口部之外的光电转换部覆盖，以防止通过开口的入射光作为泄漏部件被引入到传送通道区域，通过切断泄漏部件的内部反射路径 到此。

    MOS-type solid state imaging device with high sensitivity
    2.
    发明授权
    MOS-type solid state imaging device with high sensitivity 失效
    高灵敏度的MOS型固态成像装置

    公开(公告)号：US06674470B1

    公开(公告)日：2004-01-06

    申请号：US08933975

    申请日：1997-09-19

    申请人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

    发明人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

    IPC分类号： H04N314

    CPC分类号： H04N5/3765 ,  H04N5/3575 ,  H04N5/37457

    摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

    摘要翻译： 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大 由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管， 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

    Solid-state image sensing device with storage-diode potential controller
    3.
    发明授权
    Solid-state image sensing device with storage-diode potential controller 失效
    具有存储二极管电位控制器的固态摄像装置

    公开(公告)号：US5504526A

    公开(公告)日：1996-04-02

    申请号：US155833

    申请日：1993-11-23

    申请人： Ryohei Miyagawa ,  Shinji Ohsawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Yoshiyuki Matsunaga

    发明人： Ryohei Miyagawa ,  Shinji Ohsawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Yoshiyuki Matsunaga

    IPC分类号： H01L27/148 ,  H04N1/028 ,  H04N5/335 ,  H04N5/341 ,  H04N5/365 ,  H04N5/369 ,  H04N5/3728 ,  H04N5/376

    CPC分类号： H04N5/3728 ,  H01L27/14831 ,  H04N5/3597

    摘要： A solid-state imaging device includes a substrate, and an array of charge-packet storage cells or picture elements (or "pixels") arranged on the substrate, each including a storage diode that stores therein a signal charge packet indicative of an incident light. A charge transfer section is coupled with the array of picture elements. The transfer section includes a charge-coupled device (CCD) register layer that is spaced apart from the storage diode to define a channel region therebetween, and a first insulated electrode overlying the register layer and the channel region. A reset section is coupled to the storage diode, for potentially resetting the storage diode by additionally injecting an extra charge packet into the storage diode and by causing the charge to drained from the storage diode. A potential controller is provided which forces, when a signal charge packet is read out of the storage diode toward the CCD register layer, the storage diode to decrease in potential so that the storage diode becomes potentially less than its potential as set during the reset operation, while causing the channel region to be fixed at almost the same potential during the read operation and the reset operation.

    摘要翻译： 固态成像装置包括基板和布置在基板上的电荷分组存储单元或像素（或“像素”）的阵列，每个包括存储二极管，其中存储指示入射光的信号电荷分组 。 电荷转移部分与图像元素阵列耦合。 转印部分包括与存储二极管间隔开以限定它们之间的沟道区域的电荷耦合器件（CCD）寄存器层，以及覆盖寄存器层和沟道区域的第一绝缘电极。 复位部分耦合到存储二极管，用于通过额外地将额外的电荷分组注入到存储二极管中并通过使电荷从存储二极管排出来潜在地复位存储二极管。 提供了一种电位控制器，当将信号电荷分组从存储二极管朝向CCD寄存器层读出时，存储二极管降低电位，使得存储二极管潜在地小于其在复位操作期间设置的电位 同时在读取操作和复位操作期间使通道区域固定在几乎相同的电位。

    CCD image sensor with stacked charge transfer gate structure
    4.
    发明授权
    CCD image sensor with stacked charge transfer gate structure 失效
    CCD图像传感器具有堆叠的电荷转移门结构

    公开(公告)号：US5506429A

    公开(公告)日：1996-04-09

    申请号：US208750

    申请日：1994-03-11

    申请人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

    发明人： Nagataka Tanaka ,  Nobuo Nakamura ,  Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Michio Sasaki ,  Hirofumi Yamashita ,  Ryohei Miyagawa

    IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/357 ,  H04N5/3728 ,  H01L29/765

    CPC分类号： H01L27/14831

    摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.

    摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。 垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。 传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。 多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。 在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。 电荷转移栅电极和缓冲电极通过第一接触孔相互连接。 缓冲电极和并联线通过第二接触孔耦合在一起。 分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。

    Solid state imaging apparatus, method of manufacturing the same and video system using such solid state imaging apparatus
    5.
    发明授权
    Solid state imaging apparatus, method of manufacturing the same and video system using such solid state imaging apparatus 有权
    固态成像装置，其制造方法以及使用这种固态成像装置的视频系统

    公开(公告)号：US06528342B2

    公开(公告)日：2003-03-04

    申请号：US09885071

    申请日：2001-06-21

    申请人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

    发明人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

    IPC分类号： H01L2100

    CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14683

    摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

    摘要翻译： 本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。 在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。 通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。 形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。 布线层连接到接触区域。 然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

    Solid state imaging apparatus, and video system using such solid state imaging apparatus
    6.
    发明授权
    Solid state imaging apparatus, and video system using such solid state imaging apparatus 失效
    固态成像装置和使用这种固态成像装置的视频系统

    公开(公告)号：US06281533B1

    公开(公告)日：2001-08-28

    申请号：US08933306

    申请日：1997-09-18

    申请人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

    发明人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

    IPC分类号： H01L31062

    CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14683

    摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

    摘要翻译： 本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。 在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。 通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。 形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。 布线层连接到接触区域。 然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

    Solid-state image device including charge-coupled devices having improved electrode structure
    7.
    发明授权
    Solid-state image device including charge-coupled devices having improved electrode structure 失效
    固态图像器件包括具有改进的电极结构的电荷耦合器件

    公开(公告)号：US5428231A

    公开(公告)日：1995-06-27

    申请号：US269349

    申请日：1994-06-30

    申请人： Nagataka Tanaka ,  Yoshiyuki Matsunaga ,  Michio Sasaki ,  Hirofumi Yamashita ,  Nobuo Nakamura

    发明人： Nagataka Tanaka ,  Yoshiyuki Matsunaga ,  Michio Sasaki ,  Hirofumi Yamashita ,  Nobuo Nakamura

    IPC分类号： H01L21/28 ,  H01L27/148 ,  H01L29/423 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L29/42396 ,  H01L27/14831

    摘要： A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.

    摘要翻译： 固态成像装置包括在半导体基板上二维布置的多个光电转换累积部分，用于垂直转移从光电转换累积部分读出的信号电荷的多个垂直CCD以及用于接收和水平的水平CCD 传输由垂直CCD传输的信号电荷。 水平CCD的转印电极之间的间隙小于垂直CCD的转印电极之间的间隙。 垂直CCD的转印电极具有通过图案化第一多晶硅膜形成的单层电极结构。 水平CCD的转移电极具有重叠的双层电极结构，其包括交替排列的电极，其通过对第一多晶硅膜进行构图而形成，并且通过图案化第二多晶硅膜而形成交替排列的电极之间的电极。 水平CCD的电极之间的间隙由通过对第一多晶硅膜的交替排列的电极进行热氧化而获得的氧化硅膜确定。

    Mos type image sensor
    9.
    发明授权
    Mos type image sensor 有权
    Mos型图像传感器

    公开(公告)号：US06521926B1

    公开(公告)日：2003-02-18

    申请号：US09695989

    申请日：2000-10-26

    申请人： Michio Sasaki

    发明人： Michio Sasaki

    IPC分类号： H01L31062

    CPC分类号： H04N5/35518 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14643

    摘要： A MOS type image sensor has an image area that consists of a matrix of pixels and a peripheral circuitry area that drives the image area. To make the MOS type image sensor finer and finer, each of the pixels consists of a second p-well region having a lower impurity concentration than a first p-well region disposed in the peripheral circuitry area; a photodiode having a first main electrode region made of the second p-well region and a second main electrode region formed as a first n-diffusion layer disposed at the surface of the second p-well region; a read transistor having a first main electrode region made of the first n-diffusion layer, a second main electrode region formed as a second n-diffusion layer disposed at the surface of the second p-well region, a gate insulation film disposed on the surface of the second p-well region between the first and second n-diffusion layers, and a gate electrode disposed on the gate insulation film and connected to a read signal line; and an amplification transistor disposed in a third p-well region, having a gate electrode connected to the second main electrode region of the read transistor, a first main electrode region connected to an output signal line, and a second main electrode region. Since the impurity concentration of the second p-well region is low, scaled design rules are employable without causing “white pixels”, sensitivity deterioration, signal read voltage increase, or short-channel effect.

    摘要翻译： MOS型图像传感器具有由像素矩阵和驱动图像区域的外围电路区域组成的图像区域。 为了使MOS型图像传感器更精细，每个像素由具有比设置在外围电路区域中的第一p阱区域的杂质浓度低的第二p阱区域组成; 具有由第二p阱区域制成的第一主电极区域和形成为设置在第二p阱区域的表面处的第一n扩散层的第二主电极区域的光电二极管; 具有由第一n型扩散层制成的第一主电极区域的第二主电极区域，设置在第二p阱区域的表面处的第二n型扩散层形成的第二主电极区域， 在第一和第二n-扩散层之间的第二p阱区的表面和设置在栅极绝缘膜上并连接到读取信号线的栅电极; 以及放大晶体管，其设置在第三p阱区域中，具有连接到所述读取晶体管的第二主电极区域的栅电极，连接到输出信号线的第一主电极区域和第二主电极区域。 由于第二p阱区域的杂质浓度低，所以可以使用缩放设计规则而不引起“白色像素”，灵敏度劣化，信号读取电压增加或短通道效应。