公开(公告)号：US20060052190A1

公开(公告)日：2006-03-09

申请号：US11269480

申请日：2005-11-08

申请人： Teddy Palomaki ,  Jacob Smith

发明人： Teddy Palomaki ,  Jacob Smith

IPC分类号： A63B65/02

CPC分类号： F42B6/08 ,  A63B2244/04 ,  F42B6/04

摘要： The invention involves an arrow system having a shaft having a first end and an insert receptive of a standard point, the insert being disposed completely within the first end of the shaft. An insert installation tool may be used as part of the invention to facilitate insertion of the insert into the first end of the shaft. The invention further includes a reduced diameter hunting arrow shaft that maintains sufficient spine and weight characteristics. The reduced diameter hunting arrow shaft is receptive of standard or non-standard internal components for increasing arrow penetration and shot accuracy. Still further, the invention includes an arrow tip assembly including a male insert and a female point to assist in aligning points with arrow shafts.

公开(公告)号：US07601652B2

公开(公告)日：2009-10-13

申请号：US11157567

申请日：2005-06-21

申请人： Kaushal K. Singh ,  Sean M. Seutter ,  Jacob Smith ,  R. Suryanarayanan Iyer ,  Steve G. Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

发明人： Kaushal K. Singh ,  Sean M. Seutter ,  Jacob Smith ,  R. Suryanarayanan Iyer ,  Steve G. Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/0227 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45591 ,  C23C16/482 ,  C23C16/488 ,  C23C16/52 ,  H01L21/0228 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

摘要翻译： 本发明的实施方案通常提供使用光激发沉积膜的方法。 光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。 在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

公开(公告)号：US07459380B2

公开(公告)日：2008-12-02

申请号：US11418642

申请日：2006-05-05

申请人： David Bour ,  Sandeep Nijhawa ,  Jacob Smith ,  Lori Washington

发明人： David Bour ,  Sandeep Nijhawa ,  Jacob Smith ,  Lori Washington

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

摘要： In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.

摘要翻译： 根据本发明，提供了用于降低氮化物外延膜的位错密度的改进方法。 具体地，提供了原位蚀刻处理以优先蚀刻氮化物外延层的位错，以防止通过氮化物外延层的位错穿透。 在蚀刻位错之后，进行外延层过度生长。 在某些实施例中，位错的蚀刻与外延层的生长同时发生。 在其它实施例中，在外延层过度生长之前，在形成于位错处的蚀刻坑内沉积电介质掩模。

公开(公告)号：US20070254458A1

公开(公告)日：2007-11-01

申请号：US11414012

申请日：2006-04-27

申请人： David Bour ,  Jacob Smith ,  Sandeep Nijhawan

发明人： David Bour ,  Jacob Smith ,  Sandeep Nijhawan

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02513 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： Methods are disclosed for fabricating a compound nitride semiconductor structure. An amorphous buffer layer that includes nitrogen and a group-III element is formed over a substrate disposed within a substrate processing chamber at a first temperature. The temperature within the chamber is increased to a second temperature at which the amorphous buffer layer coalesces into crystallites over the substrate. The substrate is exposed to a corrosive agent to destroy at least some of the crystallites. A crystalline nitride layer is formed over the substrate at a third temperature using the crystallites remaining after exposure to the corrosive agent as seed crystals. The third temperature is greater than the first temperature. The crystalline nitride layer also includes nitrogen and a group-III element.

摘要翻译： 公开了用于制造复合氮化物半导体结构的方法。 在第一温度下，在设置在基板处理室内的基板上形成包含氮和III族元素的非晶缓冲层。 室内的温度增加到非晶缓冲层在衬底上聚结成微晶的第二温度。 将基底暴露于腐蚀剂以破坏至少一些微晶。 在第三温度下使用在作为晶种暴露于腐蚀剂之后残留的微晶，在衬底上形成结晶氮化物层。 第三温度大于第一温度。 结晶氮化物层还包括氮和III族元素。

公开(公告)号：US20070243702A1

公开(公告)日：2007-10-18

申请号：US11404390

申请日：2006-04-14

申请人： Sandeep Nijhawan ,  David Eaglesham ,  Lori Washington ,  David Bour ,  Jacob Smith

发明人： Sandeep Nijhawan ,  David Eaglesham ,  Lori Washington ,  David Bour ,  Jacob Smith

IPC分类号： H01L21/28

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254

摘要： Methods are provided of fabricating a nitride semiconductor structure. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over one side of the substrate with a thermal chemical-vapor-deposition process. A second layer is similarly deposited over an opposite side of the substrate using the group-III precursor and the nitrogen precursor. The substrate is cooled after depositing the first and second layers without substantially deforming a shape of the substrate.

摘要翻译： 提供了制造氮化物半导体结构的方法。 将III族前体和氮前体流入处理室中，以通过热化学气相沉积工艺在衬底的一侧沉积第一层。 类似地，使用III族前体和氮前体在衬底的相对侧上沉积第二层。 在沉积第一层和第二层之后冷却衬底，而基本上不使形状变形。

公开(公告)号：US20070082766A1

公开(公告)日：2007-04-12

申请号：US11246987

申请日：2005-10-07

申请人： Jacob Smith ,  Edwin Rowsell ,  Teddy Palomaki

发明人： Jacob Smith ,  Edwin Rowsell ,  Teddy Palomaki

IPC分类号： A63B65/02

CPC分类号： F42B6/04 ,  A63B2244/04

摘要： The present invention is directed to a shaft and arrow system. The shaft and arrow system includes a hybrid structure that may include two concentric tubes. A first of the two concentric tubes may comprise an outer shell or jacket of thin-walled metal alloy. A second of the two concentric tubes may include an inner core of thin-walled fiber reinforced polymer. The two concentric tubes may be bonded together by a suitable adhesive such as epoxy or urethane. The shaft may have a reduced diameter as compared to conventional arrow shafts, and the shaft may be receptive of a variety of inserts, points, nocks, and other components. Some inserts may be completely recessed within a first end of the shaft.

摘要翻译： 本发明涉及一种轴和箭头系统。 轴和箭头系统包括可以包括两个同心管的混合结构。 两个同心管中的第一个可以包括薄壁金属合金的外壳或护套。 两个同心管中的第二个可以包括薄壁纤维增强聚合物的内芯。 两个同心管可以通过合适的粘合剂如环氧树脂或聚氨酯粘合在一起。 与常规箭头轴相比，轴可以具有减小的直径，并且轴可以接受各种插入件，点，中心部件和其它部件。 一些插入件可以完全凹入轴的第一端内。

公开(公告)号：US20050148414A1

公开(公告)日：2005-07-07

申请号：US11012740

申请日：2004-12-15

申请人： Teddy Palomaki ,  Jacob Smith

发明人： Teddy Palomaki ,  Jacob Smith

IPC分类号： F42B6/04 ,  F42B6/06 ,  A63B41/00

CPC分类号： F42B6/08 ,  A63B2244/04 ,  F42B6/04

摘要： The invention involves an arrow system having a shaft having a first end and an insert receptive of a standard point, the insert being disposed completely within the first end of the shaft. An insert installation tool may be used as part of the invention to facilitate insertion of the insert into the first end of the shaft. The invention further includes a reduced diameter hunting arrow shaft that maintains sufficient spine and weight characteristics. The reduced diameter hunting arrow shaft is receptive of standard or non-standard internal components for increasing arrow penetration and shot accuracy. Still further, the invention includes an arrow tip assembly including a male insert and a female point to assist in aligning points with arrow shafts.

摘要翻译： 本发明涉及一种具有轴的箭头系统，其具有第一端和容纳标准点的插入件，该插入件完全设置在轴的第一端内。 可以使用插入式安装工具作为本发明的一部分，以便于将插入件插入轴的第一端。 本发明还包括一种减小直径的摆动箭头轴，其保持足够的脊柱和重量特性。 减小直径的旋转箭头轴可接受标准或非标准内部部件，以增加箭头穿透和射击精度。 此外，本发明包括一个包括一个公插入件和一个凹点的箭头末端组件，以帮助与箭头轴对准点。

公开(公告)号：US20050075202A1

公开(公告)日：2005-04-07

申请号：US10678821

申请日：2003-10-03

申请人： Teddy Palomaki ,  Jacob Smith

发明人： Teddy Palomaki ,  Jacob Smith

IPC分类号： F42B6/04 ,  F42B6/06

CPC分类号： F42B6/08 ,  A63B2244/04 ,  F42B6/04

摘要： The invention involves an arrow system having a shaft having a first end and an insert receptive of a standard point, the insert being disposed completely within the first end of the shaft. An insert installation tool may be used as part of the invention to facilitate insertion of the insert into the first end of the shaft. The invention further includes a reduced diameter hunting arrow shaft that maintains sufficient spine and weight characteristics. The reduced diameter hunting arrow shaft is receptive of standard or non-standard internal components for increasing arrow penetration and shot accuracy. Still further, the invention includes an arrow tip assembly including a male insert and a female point to assist in aligning points with arrow shafts.

公开(公告)号：US20080315667A1

公开(公告)日：2008-12-25

申请号：US12200810

申请日：2008-08-28

申请人： David R. Hall ,  Jacob Smith

发明人： David R. Hall ,  Jacob Smith

IPC分类号： E21C25/00

CPC分类号： E21C35/183 ,  E21C2035/1806

摘要： In one aspect of the present invention, a degradation assembly comprises an inverted conical face formed in a top end of a metal body tapering towards a central axis of the metal body. A base end of a carbide bolster is adapted to be brazed to the top end of the metal body within the inverted conical face. At least one protrusion is formed in the inverted conical face and is adapted to control a braze thickness between the face and the base end.

公开(公告)号：US20080309149A1

公开(公告)日：2008-12-18

申请号：US12200786

申请日：2008-08-28

申请人： David R. Hall ,  Jacob Smith

发明人： David R. Hall ,  Jacob Smith

IPC分类号： E21C25/10

CPC分类号： E21C35/183 ,  A47C3/00 ,  B28D1/186 ,  E21B10/16 ,  E21B10/36 ,  E21C35/18 ,  E21C35/197 ,  E21C2035/1806 ,  E21C2035/1826

摘要： In one aspect of the present invention, a degradation assembly comprises an inverted conical face formed in a top end of a metal body tapering towards a central axis of the metal body. A base end of a carbide bolster is adapted to be brazed to the top end of the metal body within the inverted conical face. At least one protrusion is formed in the inverted conical face and is adapted to control a braze thickness between the face and the base end.

摘要翻译： 在本发明的一个方面，降解组件包括形成在金属体的顶端中的朝向金属体的中心轴逐渐变细的倒锥形面。 碳化物垫片的基端适于在倒锥形面内钎焊到金属体的顶端。 至少一个突起形成在倒锥形面中并且适于控制面与基端之间的钎焊厚度。