LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    22.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    液晶显示装置及其制造方法

    公开(公告)号:US20150002802A1

    公开(公告)日:2015-01-01

    申请号:US14485711

    申请日:2014-09-13

    Abstract: The present invention prevents the shaving of an alignment film caused by a columnar spacer in a liquid crystal display device of an IPS method using photo-alignment. A plinth higher than a pixel electrode is formed at a part where a columnar spacer formed over a counter substrate touches a TFT substrate. When an alignment film of a double-layered structure is applied over the pixel electrode and the plinth, the thickness of the alignment film over the plinth reduces by a leveling effect. When photo-alignment is applied in the state, a photodegraded upper alignment film over the plinth disappears and a lower alignment film having a high mechanical strength remains. As a result, it is possible to prevent the shaving of the alignment film.

    Abstract translation: 本发明防止了使用光取向的IPS方法的液晶显示装置中的柱状间隔物引起的取向膜的刮削。 在对置基板上形成的柱状间隔件与TFT基板接触的部分,形成比像素电极高的底座。 当在像素电极和底座上施加双层结构的取向膜时,底座上的取向膜的厚度减小了平整效应。 当在该状态下进行光对准时,在底座上的光降解的上取向膜消失,并且残留有机械强度较高的下取向膜。 结果,可以防止取向膜的刮削。

    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    23.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    液晶显示装置及其制造方法

    公开(公告)号:US20140220848A1

    公开(公告)日:2014-08-07

    申请号:US14246787

    申请日:2014-04-07

    CPC classification number: G02F1/133788 G02F2001/1316 G02F2001/133354

    Abstract: Disclosed is a manufacturing method of a liquid crystal display device which is a manufacturing method of a liquid crystal display device including a liquid crystal alignment film to which an alignment regulating force is imparted by a photo-alignment treatment, including: a film forming step of forming a film containing a polymer whose main chain is cleaved by irradiation with light; a photo-alignment step of imparting an alignment regulating force to the film formed in the film forming step by irradiation of the film with light in an atmosphere of a temperature lower than 100° C.; and a removing step of removing a low-molecular weight component generated by cleaving the main chain of the polymer through the light irradiation after the light irradiation. Also disclosed is a liquid crystal display device manufactured by the manufacturing method.

    Abstract translation: 公开了一种液晶显示装置的制造方法,该液晶显示装置是包括通过光取向处理赋予取向调节力的液晶取向膜的液晶显示装置的制造方法,包括:成膜步骤 形成含有主链通过光照射而被切割的聚合物的膜; 光学对准步骤,通过在低于100℃的气氛中用光照射膜,在成膜步骤中形成的膜施加取向调节力; 以及去除在光照射后通过光照射分解聚合物主链而产生的低分子量成分的除去步骤。 还公开了通过该制造方法制造的液晶显示装置。

    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD FOR SAME
    24.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND MANUFACTURING METHOD FOR SAME 审中-公开
    液晶显示装置及其制造方法

    公开(公告)号:US20140184990A1

    公开(公告)日:2014-07-03

    申请号:US14199733

    申请日:2014-03-06

    CPC classification number: G02F1/136286 G02F2001/136295

    Abstract: The present invention provides a liquid crystal display device having gate wires and source/drain wires with a multilayer structure made of the same material which can be manufactured at low cost, as well as a manufacturing method for the same. In accordance with the manufacturing method, a wet etching process is carried out on the gate wires and the source/drain wires using an etchant including hydrofluoric acid and an oxidant, and the concentration of hydrofluoric acid in the etchant is different between the etchant for the gate wires and that for the source/drain wires.

    Abstract translation: 本发明提供一种液晶显示装置及其制造方法,该液晶显示装置具有栅极线和源极/漏极导线,该导线和源极/漏极导线具有由低成本制造的相同材料制成的多层结构。 根据制造方法,使用包括氢氟酸和氧化剂在内的蚀刻剂对栅极线和源极/漏极线进行湿蚀刻处理,并且蚀刻剂中的氢氟酸的浓度在 栅极线和源极/漏极线。

    DISPLAY DEVICE
    26.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20230157050A1

    公开(公告)日:2023-05-18

    申请号:US17986944

    申请日:2022-11-15

    Inventor: Toshiki KANEKO

    CPC classification number: H01L51/5209 H01L51/5218 H01L2251/5315

    Abstract: According to one embodiment, a display device includes a base, a first insulating layer disposed on the base, a lower electrode disposed on the first insulating layer, an organic layer disposed on the lower electrode and including a light-emitting layer and an upper electrode disposed on the organic layer, and the lower electrode includes a conductive layer including a contact area disposed over an entire circumference thereof when viewed in plan view, a reflective layer disposed above the conductive layer on an inner side of the contact area, which reflects light and a transparent electrode located on the conductive layer and the reflective layer and in contact with the contact area.

    SEMICONDUCTOR DEVICE
    29.
    发明申请

    公开(公告)号:US20210091226A1

    公开(公告)日:2021-03-25

    申请号:US17111810

    申请日:2020-12-04

    Abstract: A semiconductor device includes a gate electrode on a substrate, a gate insulating film on the gate electrode, an oxide semiconductor film via the gate insulating film on the gate electrode, a source electrode and a drain electrode on the oxide semiconductor film, a protective film provided on the source electrode and the drain electrode; and a conductive layer provided on the protective film and overlapped on the oxide semiconductor layer. The protective film includes a first silicon oxide film and a first silicon nitride film. The first oxide film is in contact with the oxide semiconductor layer. The gate insulating film includes a second silicon nitride film and a second silicon oxide film. The second silicon oxide film is in contact with the oxide semiconductor layer. The oxide semiconductor layer has a first region located between the source electrode and the drain electrode in a plan view.

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