公开(公告)号：US07719496B2

公开(公告)日：2010-05-18

申请号：US11282633

申请日：2005-11-21

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

IPC分类号： G09G3/32

CPC分类号： B82Y30/00 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

摘要翻译： 具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。 还提供了使用有机薄膜晶体管的平板显示装置。 有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层 和源电极或有机半导体层和漏电极。

公开(公告)号：US07601567B2

公开(公告)日：2009-10-13

申请号：US11637997

申请日：2006-12-12

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L21/00

CPC分类号： H01L51/0002 ,  H01L51/0541 ,  H01L51/0558 ,  H01L2251/5338

摘要： A method of forming an organic thin film transistor is disclosed. The method includes forming source and drain electrodes on a substrate; forming an insulating layer covering the source and drain electrodes; first surface-treating the insulating layer so that the insulating layer has a hydrophobic surface; forming an opening that exposes facing portions of the source and drain electrodes in the first surface-treated insulating layer; forming an organic semiconductor layer and a gate insulating layer in the opening; second surface-treating the first surface-treated insulating layer so that the insulating layer has a hydrophilic surface; and forming a gate electrode overlapping at least a portion of the source and drain electrodes, an organic thin film transistor, and a flat panel display device including the organic thin film transistor. According to the method of preparing an organic thin film transistor as described above, at least one of an organic semiconductor layer and a gate insulating layer can be easily formed. When the organic thin film transistor is formed in an array form with respect to a capacitor, the organic thin film transistor has a substantially low parasitic capacitance and the capacitor has a high capacitance.

摘要翻译： 公开了一种形成有机薄膜晶体管的方法。 该方法包括在衬底上形成源电极和漏电极; 形成覆盖源极和漏极的绝缘层; 首先对所述绝缘层进行表面处理，使得所述绝缘层具有疏水性表面; 形成在所述第一表面处理绝缘层中露出所述源极和漏极的相对部分的开口; 在开口中形成有机半导体层和栅极绝缘层; 对所述第一表面处理绝缘层进行表面处理，以使所述绝缘层具有亲水性表面; 以及形成与所述源极和漏极的至少一部分重叠的栅电极，有机薄膜晶体管和包括所述有机薄膜晶体管的平板显示装置。 根据如上所述制备有机薄膜晶体管的方法，可以容易地形成有机半导体层和栅极绝缘层中的至少一个。 当有机薄膜晶体管相对于电容器形成阵列形式时，有机薄膜晶体管具有大大低的寄生电容，并且电容器具有高电容。

公开(公告)号：US20070099356A1

公开(公告)日：2007-05-03

申请号：US11588362

申请日：2006-10-27

申请人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

发明人： Jin-Seong Park ,  Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L21/84 ,  H01L21/00 ,  G02F1/1335

CPC分类号： H01L51/5237 ,  H01L51/5253 ,  H01L2251/5315

摘要： A flat panel display device of which a display unit is efficiently sealed and which has good flexibility, and a method of manufacturing the flat panel display. The flat panel display device includes a substrate, a display unit formed on the substrate, and a sealing part formed so as to cover the display unit using an atomic layer deposition (ALD) method.

摘要翻译： 显示单元被有效地密封并且具有良好的柔性的平板显示装置以及制造平板显示器的方法。 平板显示装置包括基板，形成在基板上的显示单元和形成为使用原子层沉积（ALD）方法覆盖显示单元的密封部。

公开(公告)号：US20070090349A1

公开(公告)日：2007-04-26

申请号：US11546342

申请日：2006-10-12

申请人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Jin-Seong Park

IPC分类号： H01L29/08 ,  H01L29/76 ,  H01L21/00 ,  H01L35/24 ,  H01L29/10 ,  H01L51/00 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L51/0545 ,  B82Y10/00 ,  B82Y30/00 ,  H01L27/3274 ,  H01L51/0012 ,  H01L51/0541 ,  H01L51/105

摘要： An organic thin film transistor that can reduce contact resistance between source and drain electrodes and an organic semiconductor layer and can be readily manufactured, a flat panel display apparatus utilizing the organic thin film transistor, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a substrate; a source electrode and a drain electrode disposed on the gate insulating film; a conductive polymer layer disposed to cover at least a portion of each of source and drain electrodes; a hydrophobic material layer disposed on the substrate and the source and drain electrodes except regions where the conductive polymer layer are formed; an organic semiconductor layer electrically connected to the source and drain electrodes; a gate insulating film disposed to cover the organic semiconductor layer; and a gate electrode disposed on the gate insulating film.

摘要翻译： 一种能够降低源极和漏极之间的接触电阻以及有机半导体层并且可以容易地制造的有机薄膜晶体管，利用有机薄膜晶体管的平板显示装置和制造有机薄膜晶体管的方法。 有机薄膜晶体管包括：基板; 设置在栅极绝缘膜上的源电极和漏电极; 导电聚合物层，设置成覆盖源电极和漏电极中的每一个的至少一部分; 设置在基板上的疏水性材料层以及除了形成导电性聚合物层的区域之外的源极和漏极电极; 电连接到源极和漏极的有机半导体层; 设置为覆盖有机半导体层的栅极绝缘膜; 以及设置在栅极绝缘膜上的栅电极。

公开(公告)号：US20060108581A1

公开(公告)日：2006-05-25

申请号：US11282633

申请日：2005-11-21

申请人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

发明人： Taek Ahn ,  Min-Chul Suh ,  Jae-Bon Koo ,  Jin-Seong Park

IPC分类号： H01L29/08

CPC分类号： B82Y30/00 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/0052 ,  H01L51/0078 ,  H01L51/0516 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor that has good adhesiveness and good contact resistance as well as allows ohmic contact between an organic semiconductor layer and a source electrode and a drain electrode, and its manufacturing method. There is also provided a flat panel display device using the organic thin film transistor. The organic thin film transistor includes a source electrode, a drain electrode, an organic semiconductor layer, a gate insulating layer, and a gate electrode formed on a substrate, and a carrier relay layer including conductive polymer material formed at least between the organic semiconductor layer and the source electrode or the organic semiconductor layer and the drain electrode.

摘要翻译： 具有良好的粘合性和良好的接触电阻以及有机半导体层与源电极和漏电极之间的欧姆接触的有机薄膜晶体管及其制造方法。 还提供了使用有机薄膜晶体管的平板显示装置。 有机薄膜晶体管包括在基板上形成的源电极，漏电极，有机半导体层，栅极绝缘层和栅电极，以及载体中继层，其至少形成在有机半导体层 和源电极或有机半导体层和漏电极。

公开(公告)号：US20090181482A1

公开(公告)日：2009-07-16

申请号：US12379817

申请日：2009-03-02

申请人： Min-Chul Suh ,  Taek Ahn ,  Yong-Woo Park

发明人： Min-Chul Suh ,  Taek Ahn ,  Yong-Woo Park

IPC分类号： H01L21/28

CPC分类号： H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L51/0541 ,  H01L51/5218 ,  H01L2251/5315

摘要： A flat panel display apparatus includes a gate insulating layer having openings which define pixels. The flat panel display apparatus includes: a substrate; a source electrode and a drain electrode formed on the substrate; a semiconductor layer contacting the source electrode and the drain electrode; a gate formed on the substrate; an insulating layer formed between the source and drain electrodes and the gate, and including an opening; and a pixel electrode partially exposed by the opening of the insulating layer. The insulating layer acts as a gate insulating layer and a pixel definition layer defining the pixel electrode.

公开(公告)号：US20090170291A1

公开(公告)日：2009-07-02

申请号：US12318915

申请日：2009-01-12

申请人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L21/20 ,  H01L21/28

CPC分类号： H01L27/3274 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

摘要翻译： 一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。 有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜 所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案， 所述分离图案适于限定半导体层的沟道区。

公开(公告)号：US07495252B2

公开(公告)日：2009-02-24

申请号：US11436531

申请日：2006-05-19

申请人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

发明人： Taek Ahn ,  Min-Chul Suh ,  Yeon-Gon Mo

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L27/3274 ,  H01L27/283 ,  H01L51/0017 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： An organic thin film transistor that prevents the surface of an organic semiconductor layer from being damaged and reduces turn-off current, a method of fabricating the same, and an organic light-emitting device incorporating the organic thin film transistor. The organic thin film transistor includes a substrate, source and drain electrodes arranged on the substrate, a semiconductor layer contacting the source and drain electrodes and comprising a channel region, a protective film arranged on the semiconductor layer and having a same pattern as the semiconductor layer, the protective film comprising a laser-absorbing material, a gate insulating film arranged between the gate and the source and drain electrodes, a gate electrode arranged on the gate insulating film and a separation pattern arranged within the semiconductor layer and within the protective film, the separation pattern adapted to define the channel region of the semiconductor layer.

摘要翻译： 一种防止有机半导体层的表面被损坏并降低截止电流的有机薄膜晶体管，其制造方法和结合有机薄膜晶体管的有机发光器件。 有机薄膜晶体管包括基板，设置在基板上的源极和漏极，与源极和漏极接触的半导体层，并且包括沟道区，配置在半导体层上并具有与半导体层相同的图案的保护膜 所述保护膜包括激光吸收材料，设置在所述栅极与所述源极和漏极之间的栅极绝缘膜，设置在所述栅极绝缘膜上的栅极电极和布置在所述半导体层内部和所述保护膜内的分离图案， 所述分离图案适于限定半导体层的沟道区。

公开(公告)号：US20080182356A1

公开(公告)日：2008-07-31

申请号：US12078171

申请日：2008-03-27

申请人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

发明人： Min-Chul Suh ,  Jae-Bon Koo ,  Yeon-Gon Mo ,  Taek Ahn ,  Jong-Han Jeong

IPC分类号： H01L51/40

CPC分类号： H01L51/0541 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0516

摘要： A thin film transistor, a method of manufacturing the same, and a flat panel display including the thin film transistor. The thin film transistor includes a gate electrode, a source electrode and a drain electrode, a first conductive layer connected to the gate electrode, a second conductive layer connected to one of the source and drain electrodes, an organic semiconductor layer that contacts the source and drain electrodes and an insulating layer insulating the source and drain electrodes and the organic semiconductor layer from the gate electrode, wherein at least one of the gate electrode, the first conductive layer, the source and drain electrodes, and the second conductive layer includes conductive nano-particles and a cured resin. Conductive layers of the thin film transistor can have precise patterns. The thin film transistor can be manufactured by low-cost, low-temperature processes.

摘要翻译： 薄膜晶体管，其制造方法和包括薄膜晶体管的平板显示器。 薄膜晶体管包括栅电极，源电极和漏电极，连接到栅电极的第一导电层，连接到源极和漏极之一的第二导电层，接触源极的有机半导体层和 漏电极和绝缘层，其将源极和漏极以及有机半导体层与栅电极绝缘，其中栅电极，第一导电层，源极和漏极以及第二导电层中的至少一个包括导电纳米 颗粒和固化树脂。 薄膜晶体管的导电层可以具有精确的图案。 薄膜晶体管可以通过低成本，低温工艺制造。

公开(公告)号：US20070111371A1

公开(公告)日：2007-05-17

申请号：US11595568

申请日：2006-11-10

申请人： Taek Ahn ,  Min-Chul Suh

发明人： Taek Ahn ,  Min-Chul Suh

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0005 ,  H01L51/0021 ,  H01L51/0097

摘要： An organic thin film transistor (OTFT) and a method of fabricating the same are provided in which an organic layer and metal interconnections are formed to have certain linewidths and shapes such that a degradation of device characteristics is prevented. The method includes providing a substrate, forming a gate electrode on the substrate, forming a gate insulating layer on the gate electrode, forming source and drain electrodes on the gate insulating layer, and forming a semiconductor layer on the source and drain electrodes. The gate electrode is formed by an inkjet printing method and ablated by a laser.

摘要翻译： 提供有机薄膜晶体管（OTFT）及其制造方法，其中有机层和金属互连形成为具有一定的线宽和形状，从而防止器件特性的劣化。 该方法包括提供衬底，在衬底上形成栅电极，在栅电极上形成栅极绝缘层，在栅极绝缘层上形成源电极和漏电极，以及在源极和漏极上形成半导体层。 栅电极通过喷墨印刷法形成，并通过激光烧蚀。