公开(公告)号：US08427393B2

公开(公告)日：2013-04-23

申请号：US13041078

申请日：2011-03-04

申请人： Yasuhiko Nakazaki ,  Yoshinori Saito ,  Tsutomu Fujita ,  Yoichi Fukushima

发明人： Yasuhiko Nakazaki ,  Yoshinori Saito ,  Tsutomu Fujita ,  Yoichi Fukushima

IPC分类号： G09G5/00

CPC分类号： G09G5/00

摘要： The multi-layer display device apparatus has a first display part, a second display part arranged at the rear-side of the first display part, a transforming part arranged between the first and the second display part. The transforming part transforms a linear polarized light in to a non-polarized light. Further, the display device has a storage part which stores a parameter for adjusting the image quality of the image displayed on the first and second display part, and an image adjustment part which adjusts the image quality of the image displayed in the first and second display part based on the parameter stored in the storage part.

摘要翻译： 多层显示装置装置具有第一显示部，布置在第一显示部的后侧的第二显示部，配置在第一显示部和第二显示部之间的变换部。 变换部分将线性偏振光变换为非偏振光。 此外，显示装置具有存储用于调整显示在第一和第二显示部分上的图像的图像质量的参数的存储部分，以及调整在第一和第二显示器中显示的图像的图像质量的图像调整部分 部分基于存储在存储部分中的参数。

公开(公告)号：USD661232S1

公开(公告)日：2012-06-05

申请号：US29391754

申请日：2011-05-12

申请人： Toshiyuki Okumoto ,  Tsutomu Fujita

设计人： Toshiyuki Okumoto ,  Tsutomu Fujita

公开(公告)号：USD647823S1

公开(公告)日：2011-11-01

申请号：US29391745

申请日：2011-05-12

申请人： Toshiyuki Okumoto ,  Tsutomu Fujita

设计人： Toshiyuki Okumoto ,  Tsutomu Fujita

公开(公告)号：US20050210267A1

公开(公告)日：2005-09-22

申请号：US10803862

申请日：2004-03-18

申请人： Jun Sugano ,  Tsutomu Fujita ,  Masatomo Kanegae

发明人： Jun Sugano ,  Tsutomu Fujita ,  Masatomo Kanegae

IPC分类号： H04K1/00 ,  H04L29/06 ,  H04W12/06

CPC分类号： H04L63/0846 ,  H04W12/06

摘要： An object of the present invention is to provide a user authentication method and system, an information terminal device and a service providing server, a subject identification method and system, a correspondence confirmation method and system, an object confirmation method and system, which are capable of assuring authentication and/or confirmation of a person, an animal and a plant, or an object and improving precision thereof, and program products for them. In order to perform user authentication when a user of an information terminal device 30 such as a cellular phone or the like receives a service from a service providing server 20 via a network, iris authentication is performed, and a password is automatically updated every time a service is provided to generate a new password to be used when a next service is provided, and the new password is stored in both the information terminal device 30 and the service providing server 20.

摘要翻译： 本发明的目的是提供一种用户认证方法和系统，信息终端设备和服务提供服务器，对象识别方法和系统，对应确认方法和系统，对象确认方法和系统，其能够 确保人，动物和植物或物体的认证和/或确认，并提高其精度，并为其编制产品。 为了在诸如蜂窝电话等的信息终端装置30的用户经由网络从服务提供服务器20接收到服务时执行用户认证，则执行虹膜认证，并且每次都自动更新密码 提供服务以生成在提供下一服务时要使用的新密码，并且新密码被存储在信息终端设备30和服务提供服务器20两者中。

公开(公告)号：US6023440A

公开(公告)日：2000-02-08

申请号：US320577

申请日：1999-05-27

申请人： Hisakazu Kotani ,  Hironori Akamatsu ,  Tsutomu Fujita

发明人： Hisakazu Kotani ,  Hironori Akamatsu ,  Tsutomu Fujita

IPC分类号： G09G5/39 ,  G11C11/406 ,  G11C13/00

CPC分类号： G09G5/39 ,  G11C11/406 ,  G09G2360/123 ,  G09G5/001

摘要： A memory array divided into a plurality of sub-memory-arrays is disposed on a chip so that, if a specified sub-memory-array is selected by a sub-memory-array selecting circuit, a normal read/write operation is performed with respect to the sub-memory-array based on an address indicated by a group of external address signals. At the same time, a clock generator for self-refresh mounted on a chip generates a word-line basic clock for self-refresh and a word-line basic clock for refresh, thereby selecting the word lines in the sub-memory-arrays which have not been selected. Prior to a predetermined time at which the sub-memory-array subjected to a refresh operation is subsequently selected, a refresh halt signal is outputted so as to forcibly halt the refresh operation, thereby preventing insufficient recharging of a memory cell. Each of the plurality of sub-memory-arrays stores, of sequential sets of image data, data on one frame or one field.

摘要翻译： 分割成多个子存储器阵列的存储器阵列设置在芯片上，使得如果通过子存储器阵列选择电路选择了指定的子存储器阵列，则执行正常的读取/写入操作， 基于由一组外部地址信号指示的地址对子存储器阵列。 同时，安装在芯片上的用于自刷新的时钟发生器产生用于自刷新的字线基本时钟和用于刷新的字线基本时钟，从而选择子存储阵列中的字线，其中 尚未选中。 在随后选择进行刷新操作的子存储阵列的预定时间之前，输出刷新停止信号，以强制中止刷新操作，从而防止存储单元的充电不足。 多个子存储器阵列中的每一个存储顺序的图像数据组，一帧或一个场上的数据。

公开(公告)号：US5805524A

公开(公告)日：1998-09-08

申请号：US593851

申请日：1996-01-30

申请人： Hisakazu Kotani ,  Hironori Akamatsu ,  Tsutomu Fujita

发明人： Hisakazu Kotani ,  Hironori Akamatsu ,  Tsutomu Fujita

IPC分类号： G09G5/39 ,  G11C11/406 ,  G11C13/00

CPC分类号： G09G5/39 ,  G11C11/406 ,  G09G2360/123 ,  G09G5/001

摘要： A memory array divided into a plurality of sub-memory-arrays is disposed on a chip so that, if a specified sub-memory-array is selected by a sub-memory-array selecting circuit, a normal read/write operation is performed with respect to the sub-memory-array based on an address indicated by a group of external address signals. At the same time, a clock generator for self-refresh mounted on a chip generates a word-line basic clock for self-refresh and a word-line basic clock for refresh, thereby selecting the word lines in the sub-memory-arrays which have not been selected. Prior to a predetermined time at which the sub-memory-array subjected to a refresh operation is subsequently selected, a refresh halt signal is outputted so as to forcibly halt the refresh operation, thereby preventing insufficient recharging of a memory cell. Each of the plurality of sub-memory-arrays stores, of sequential sets of image data, data on one frame or one field.

公开(公告)号：US5084413A

公开(公告)日：1992-01-28

申请号：US532170

申请日：1990-05-29

申请人： Tsutomu Fujita ,  Takao Kakiuchi ,  Hiroshi Yamamoto ,  Shoichi Tanimura

发明人： Tsutomu Fujita ,  Takao Kakiuchi ,  Hiroshi Yamamoto ,  Shoichi Tanimura

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76879 ,  H01L21/28512

摘要： A method for filling a contact hole in which (i) a silicon dioxide layer is formed on a silicon substrate; (ii) a contact hole is formed in the silicon dioxide layer; (iii) polysilicon film is formed on the side and bottom surface portions of the contact hole; (iv) gas containing tungsten reacts with the film; and (v) the contact hole is filled up with tungsten.

摘要翻译： 一种用于填充接触孔的方法，其中（i）二氧化硅层形成在硅衬底上; （ii）在二氧化硅层中形成接触孔; （iii）在接触孔的侧面和底面部分上形成多晶硅膜; （iv）含钨气体与膜反应; 和（v）接触孔填充钨。

公开(公告)号：US5066602A

公开(公告)日：1991-11-19

申请号：US295380

申请日：1989-01-10

申请人： Toyoki Takemoto ,  Tadao Komeda ,  Haruyasu Yamada ,  Tsutomu Fujita

发明人： Toyoki Takemoto ,  Tadao Komeda ,  Haruyasu Yamada ,  Tsutomu Fujita

IPC分类号： H01L21/74 ,  H01L21/761 ,  H01L21/8228 ,  H01L27/02 ,  H01L27/06 ,  H01L27/082 ,  H01L27/092

CPC分类号： H01L27/0244 ,  H01L21/74 ,  H01L21/761 ,  H01L21/82285 ,  H01L27/0623 ,  H01L27/0826 ,  H01L27/0922 ,  Y10S148/009 ,  Y10S148/151

摘要： In a semiconductor IC, a vertical pnp or npn transistor of a uniform characteristic and a high breakdown voltage is made by forming, for example, a p.sup.- -collector region (39) in an n-type epitaxial region, an n-well base region (41) formed in the p.sup.- -collector region (39) and a p-emitter region (42) formed in the n-well base region (41); and furthermore, for example as shown in FIG. 9, p.sup.- -regions (40) and (49) are formed simultaneously with the p.sup.- -collector region (39) and an n-region (53) is formed simultaneously with the n-well base region (41), thereby constituting IIL of superior characteristics and a high resistance device at the same time as forming of the vertical transistor without substantial increase of manufacturing steps; and in the similar way, by combining the p.sup.- -region and n-region formed in the above-mentioned simultaneous steps with other region formed simultaneously with the forming of the vertical transistor, high h.sub.FE transistor, high speed vertical npn transistor, cross-over devices, p-channel and/or n-channel MOS transistors can be formed within limited manufacturing steps.

公开(公告)号：US4418469A

公开(公告)日：1983-12-06

申请号：US349532

申请日：1982-02-17

申请人： Tsutomu Fujita

发明人： Tsutomu Fujita

IPC分类号： H01L27/04 ,  H01L21/265 ,  H01L21/761 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/8605 ,  H01L21/74

CPC分类号： H01L29/8605 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/8222 ,  H01L27/0658

摘要： A method of making at a relatively low temperature, a resistor region of a high sheet resistance, solely or together with other circuit devices such as bipolar transistors in an IC chip, with the step of forming a buried resistor layer inside a semiconductor substrate at a predetermined depth by an ion implantation, wherein the resultant resistor region has a well-controlled high sheet resistance and the obtained bipolar transistors have a well-improved high frequency characteristics.

摘要翻译： 在IC芯片中单独或与其他电路器件（例如双极型晶体管）一起在较低温度下制造高电阻的电阻器区域的方法，其中在半导体衬底内形成掩埋电阻层的步骤 通过离子注入的预定深度，其中所得的电阻器区域具有良好控制的高薄层电阻，并且所获得的双极晶体管具有良好改善的高频特性。

公开(公告)号：US4307319A

公开(公告)日：1981-12-22

申请号：US921948

申请日：1978-07-05

申请人： Motoyasu Terao ,  Tadaaki Hirai ,  Eiichi Maruyama ,  Hideaki Yamamoto ,  Tsutomu Fujita ,  Naohiro Goto ,  Keiichi Shidara

发明人： Motoyasu Terao ,  Tadaaki Hirai ,  Eiichi Maruyama ,  Hideaki Yamamoto ,  Tsutomu Fujita ,  Naohiro Goto ,  Keiichi Shidara

IPC分类号： H01J29/45 ,  H01L31/08

CPC分类号： H01J29/451

摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.

摘要翻译： 光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及 其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。