公开(公告)号：US20050042374A1

公开(公告)日：2005-02-24

申请号：US10652224

申请日：2003-08-22

申请人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/06

CPC分类号： C23C16/45525 ,  C23C16/40 ,  C23C16/448 ,  Y10S427/101

摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

摘要翻译： 本发明包括利用超临界流体将前体引入反应室的方法。 在一些方面，使用超临界流体在ALD期间将至少一种前体引入室中，并且在特定方面，超临界流体用于在ALD期间将多种前体引入反应室。 本发明可用于形成任何各种材料，包括含金属的材料，例如金属氧化物，金属氮化物和由金属组成的材料。 可以通过利用超临界流体来形成金属氧化物，以将含金属的前体引入反应室，然后前体在基材的表面上形成含金属的层。 随后，含金属层可以与氧反应以将该层内的至少一些金属转化为金属氧化物。

公开(公告)号：US07611971B2

公开(公告)日：2009-11-03

申请号：US11472009

申请日：2006-06-21

申请人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher W. Hill ,  Garo J. Derderian

发明人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher W. Hill ,  Garo J. Derderian

IPC分类号： H01L21/00

CPC分类号： C23C16/4401 ,  C23C14/564

摘要： A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseous reaction product, and removing the gaseous reaction product from the environment. The aluminum compound may be a trialkylaluminum compound, an alane, an alkylaluminum hydride, an alkylaluminum halide, an alkylaluminum sesquihalide, or an aluminum sesquihalide. The aluminum compound may alternatively form a solid aluminum product, which is deposited on a surface associated with the halogen-containing environment or onto a semiconductor disposed therewithin. The halogenated material is incorporated into the solid aluminum product, forming an inert film within which the halogenated material is trapped.

摘要翻译： 一种在含卤素环境中减少卤化物质的量的方法。 该方法包括将铝化合物引入含卤素的环境中，使铝化合物与卤化物反应形成气态反应产物，并从气氛中除去气态反应产物。 铝化合物可以是三烷基铝化合物，烷烃，烷基铝氢化物，烷基铝卤化物，烷基铝倍半卤化物或倍半卤化铝。 铝化合物可替代地形成固体铝产物，其沉积在与含卤素环境相关的表面上或其上设置的半导体上。 将卤化物掺入固体铝产品中，形成惰性膜，卤化物质被捕获在该惰性膜中。

公开(公告)号：US07378354B2

公开(公告)日：2008-05-27

申请号：US11414407

申请日：2006-04-28

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： H01L21/302

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间组合物单层，随后是与中间体组合物反应所需的沉积组合物，统称为将多种不同的组合物沉积前体流到沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

公开(公告)号：US07368382B2

公开(公告)日：2008-05-06

申请号：US11413438

申请日：2006-04-28

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： H01L21/44

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

公开(公告)号：US20060222770A1

公开(公告)日：2006-10-05

申请号：US11404611

申请日：2006-04-13

申请人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri

发明人： Demetrius Sarigiannis ,  Garo Derderian ,  Cem Basceri

IPC分类号： C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/40 ,  C23C16/448 ,  Y10S427/101

摘要： The invention includes methods of utilizing supercritical fluids to introduce precursors into reaction chambers. In some aspects, a supercritical fluid is utilized to introduce at least one precursor into a chamber during ALD, and in particular aspects the supercritical fluid is utilized to introduce multiple precursors into the reaction chamber during ALD. The invention can be utilized to form any of various materials, including metal-containing materials, such as, for example, metal oxides, metal nitrides, and materials consisting of metal. Metal oxides can be formed by utilizing a supercritical fluid can be utilized to introduce a metal-containing precursor into reaction chamber, with the precursor then forming a metal-containing layer over a surface of a substrate. Subsequently, the metal-containing layer can be reacted with oxygen to convert at least some of the metal within the layer to metal oxide.

公开(公告)号：US20060115957A1

公开(公告)日：2006-06-01

申请号：US11327794

申请日：2006-01-06

申请人： Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

发明人： Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

IPC分类号： H01L21/76 ,  H01L21/20 ,  H01L21/302

CPC分类号： C23C16/45527 ,  C23C16/34 ,  C23C16/45546

摘要： The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

摘要翻译： 本公开提供了用于在批次的微特征工件上沉积材料中有用的方法和装置。 一个实施方案提供了一种方法，其中一定量的第一前体气体以第一封壳压力被引入外壳。 当以第一流速引入吹扫气体时，外壳内的压力降低到第二封闭压力。 第二外壳压力可接近或等于处理系统在第一流量下的稳态基础压力。 在降低压力之后，吹扫气体流量可以增加到第二流量，并且外壳压力可以增加到第三外壳压力。 此后，第二前体气体的流动可以在第四封闭压力下以外壳内的压力引入; 第三外壳压力理想地在第四外壳压力的约10％内。

公开(公告)号：US20050059261A1

公开(公告)日：2005-03-17

申请号：US10665099

申请日：2003-09-17

申请人： Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

发明人： Cem Basceri ,  Trung Doan ,  Ronald Weimer ,  Kevin Beaman ,  Lyle Breiner ,  Lingyi Zheng ,  Er-Xuan Ping ,  Demetrius Sarigiannis ,  David Kubista

IPC分类号： C23C16/34 ,  H01L21/31

CPC分类号： C23C16/45527 ,  C23C16/34 ,  C23C16/45546

摘要： The present disclosure provides methods and apparatus useful in depositing materials on batches of microfeature workpieces. One implementation provides a method in which a quantity of a first precursor gas is introduced to an enclosure at a first enclosure pressure. The pressure within the enclosure is reduced to a second enclosure pressure while introducing a purge gas at a first flow rate. The second enclosure pressure may approach or be equal to a steady-state base pressure of the processing system at the first flow rate. After reducing the pressure, the purge gas flow may be increased to a second flow rate and the enclosure pressure may be increased to a third enclosure pressure. Thereafter, a flow of a second precursor gas may be introduced with a pressure within the enclosure at a fourth enclosure pressure; the third enclosure pressure is desirably within about 10 percent of the fourth enclosure pressure.

摘要翻译： 本公开提供了用于在批次的微特征工件上沉积材料中有用的方法和装置。 一个实施方案提供了一种方法，其中一定量的第一前体气体以第一封壳压力被引入外壳。 当以第一流速引入吹扫气体时，外壳内的压力降低到第二封闭压力。 第二外壳压力可接近或等于处理系统在第一流量下的稳态基础压力。 在降低压力之后，吹扫气体流量可以增加到第二流量，并且外壳压力可以增加到第三外壳压力。 此后，第二前体气体的流动可以在第四封闭压力下以外壳内的压力引入; 第三外壳压力理想地在第四外壳压力的约10％内。

公开(公告)号：US07498057B2

公开(公告)日：2009-03-03

申请号：US11075017

申请日：2005-03-08

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： C23C16/04

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/455

摘要： A deposition method includes positioning a substrate within a deposition chamber defined at least in part by chamber walls. At least one of the chamber walls comprises a chamber surface having a plurality of purge gas inlets to the chamber therein. A process gas is provided over the substrate effective to deposit a layer onto the substrate. During such providing, a material adheres to the chamber surface. Reactive purge gas is emitted to the deposition chamber from the purge gas inlets effective to form a reactive gas curtain over the chamber surface and away from the substrate, with such reactive gas reacting with such adhering material. Further implementations are contemplated.

摘要翻译： 沉积方法包括将基板定位在至少部分地由室壁限定的沉积室内。 所述室壁中的至少一个包括腔室表面，其中具有多个吹扫气体入口。 在衬底上设置工艺气体，有效地将层沉积到衬底上。 在这种提供过程中，材料粘附到室表面。 反应性净化气体从吹扫气体入口排出到沉积室，有效地在室表面上形成反应性气体帘幕并远离衬底，这种反应性气体与这种粘附材料反应。 考虑进一步的实现。

公开(公告)号：US20080241386A1

公开(公告)日：2008-10-02

申请号：US12115412

申请日：2008-05-05

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： C23C16/08

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间体组合物单层，随后是与中间体组合物反应所需的沉积组合物，共同地将多个不同的组合物沉积前体流入沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中，并有效地与这种粘附材料反应。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。

公开(公告)号：US07303991B2

公开(公告)日：2007-12-04

申请号：US10863048

申请日：2004-06-07

申请人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

发明人： Demetrius Sarigiannis ,  Garo J. Derderian ,  Cem Basceri ,  Gurtej S. Sandhu ,  F. Daniel Gealy ,  Chris M. Carlson

IPC分类号： H01L21/44

CPC分类号： H01L21/32051 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/45531 ,  C23C16/45534 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31616

摘要： The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.

摘要翻译： 本发明包括在基板上形成沉积的组合物层的原子层沉积方法。 该方法包括将半导体衬底定位在原子层沉积室内。 在基材上形成中间体组合物单层，随后是与中间体组合物反应所需的沉积组合物，共同地将多个不同的组合物沉积前体流入沉积室内的基底。 材料粘附到室内部件表面，从而依次形成。 在这种顺序形成之后，反应性气体流入到与多种不同的沉积前体不同的组合物中并且有效地与这种粘附材料反应的室。 在反应气体流动之后，重复这种顺序形成。 考虑进一步的实现。