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32 条记录 (耗时 0.046 秒)

    Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods
    22.
    发明授权
    Magnetic memory device having uniform switching characteristics and capable of switching with low current and associated methods 有权
    磁存储器件具有均匀的开关特性并且能够以低电流和相关方法切换

    公开(公告)号：US07508041B2

    公开(公告)日：2009-03-24

    申请号：US11208618

    申请日：2005-08-23

    申请人： Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

    发明人： Jin-seo Noh ,  Tae-wan Kim ,  Hong-seog Kim ,  Eun-sik Kim

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A magnetic memory device includes a magnetic tunneling junction (MTJ) structure having a cylindrical shape. Elements of the MTJ structure are co-axial. The MTJ structure includes a conductive layer, an insulating layer co-axially formed around the conductive layer and a material layer formed around the insulating layer, the material layer being co-axial with the conductive layer and having a plurality of magnetic layers. The material layer includes a lower magnetic layer, a tunneling layer, and an upper magnetic layer that are sequentially stacked around and along the conductive layer.

    摘要翻译： 磁存储器件包括具有圆柱形形状的磁隧道结（MTJ）结构。 MTJ结构的元素是同轴的。 MTJ结构包括导电层，围绕导电层同轴形成的绝缘层和围绕绝缘层形成的材料层，该材料层与导电层同轴并具有多个磁性层。 材料层包括依次层叠并沿着导电层的下磁性层，隧道层和上磁性层。

    Ferroelectric recording medium and writing method for the same
    25.
    发明申请
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US20060175644A1

    公开(公告)日：2006-08-10

    申请号：US11348485

    申请日：2006-02-07

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： H01L29/94

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

    Data storage device using magnetic domain wall movement and method of operating the same
    26.
    发明授权
    Data storage device using magnetic domain wall movement and method of operating the same 有权
    使用磁畴壁运动的数据存储装置及其操作方法

    公开(公告)号：US07961491B2

    公开(公告)日：2011-06-14

    申请号：US11730121

    申请日：2007-03-29

    申请人： Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    发明人： Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    IPC分类号： G11C19/00

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

    摘要： Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

    摘要翻译： 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 该数据存储装置包括具有多个磁畴的磁性层，向磁性层施加用于磁畴壁运动的电流的电流施加单元和用于读取和写入的磁头，其中该磁性层包括多个 在多个行和列中的基板上形成的垂直磁性层，以及形成在垂直磁性层上以连接垂直磁性层的水平磁性层。

    Magnetic logic device and methods of manufacturing and operating the same
    29.
    发明授权
    Magnetic logic device and methods of manufacturing and operating the same 有权
    磁逻辑器件及其制造和操作方法

    公开(公告)号：US07529119B2

    公开(公告)日：2009-05-05

    申请号：US11320898

    申请日：2005-12-30

    申请人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

    发明人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

    IPC分类号： G11C11/00

    CPC分类号： H03K19/16 ,  H01L43/08

    摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

    摘要翻译： 提供了一种磁逻辑器件（MLD）以及制造和操作MLD的方法。 MLD包括：第一个互连; 形成在所述第一互连上的下磁性层，所述下磁性层具有沿预定方向固定的磁化方向; 形成在下磁性层上的非磁性层; 形成在所述非磁性层上的上磁性层，所述上磁性层具有与所述下磁性层的磁化方向平行或反平行的磁化方向; 以及形成在上磁性层上的第二互连。 第一电流源设置在第一互连的一端和第二互连的一端之间，第二电流源设置在第一互连的另一端和第二互连的另一端之间。

    Data storage device using magnetic domain wall movement and method of operating the same
    30.
    发明申请
    Data storage device using magnetic domain wall movement and method of operating the same 有权
    使用磁畴壁运动的数据存储装置及其操作方法

    公开(公告)号：US20080100963A1

    公开(公告)日：2008-05-01

    申请号：US11730121

    申请日：2007-03-29

    申请人： Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    发明人： Sung-chul Lee ,  Sung-hoon Choa ,  Eun-sik Kim

    IPC分类号： G11B5/74

    CPC分类号： G11C11/14 ,  G11C19/0808 ,  Y10S977/933 ,  Y10S977/935

    摘要： Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer which has a plurality of magnetic domains, a current applying unit which applies current for a magnetic domain wall movement to the magnetic layer, and a head for reading and writing, wherein the magnetic layer comprises a plurality of perpendicular magnetic layers formed on a substrate in a plurality of rows and columns, and a horizontal magnetic layer formed on the perpendicular magnetic layers to connect the perpendicular magnetic layers.

    摘要翻译： 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 该数据存储装置包括具有多个磁畴的磁性层，向磁性层施加用于磁畴壁运动的电流的电流施加单元和用于读取和写入的磁头，其中该磁性层包括多个 在多个行和列中的基板上形成的垂直磁性层，以及形成在垂直磁性层上以连接垂直磁性层的水平磁性层。