公开(公告)号：US4615620A

公开(公告)日：1986-10-07

申请号：US685550

申请日：1984-12-24

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22

CPC分类号： G01B11/22

摘要： An apparatus for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

摘要翻译： 一种用于以非接触方式测量在衬底的表面上以周期性图案蚀刻形成的凹坑和凹槽的深度的装置。 该测量基于通过对样品照射具有可变波长的光束而不考虑第0级的衍射强度的检测。 而传统的测量系统对第0级的衍射光线（即反射光的主要分量）敏感，这阻碍了检测到承载深度信息的较高阶衍射光线。

公开(公告)号：US4479848A

公开(公告)日：1984-10-30

申请号：US579941

申请日：1984-02-14

申请人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

发明人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01J37/32935 ,  H01L21/302

摘要： The present invention consists in an etching method and apparatus wherein an optical image which is reflected from a region of a dicing stripe pattern on a substrate to-be-etched, such as a semiconductor wafer, is focused by a projecting optical system during selective etching. The focused pattern is converted into an image signal by an image detector, and a change of contrast in the region of the dicing stripe pattern is determined from the image signal. Based on this, an ending time for the etching can be decided from the change of contrast.

摘要翻译： 本发明是一种蚀刻方法和装置，其中在选择性刻蚀中通过投影光学系统聚焦由半导体晶片等待刻蚀的基板上的切割条纹图案的区域反射的光学图像 。 通过图像检测器将聚焦图案转换为图像信号，并根据图像信号确定切割条纹图案区域中的对比度变化。 基于此，可以根据对比度的变化来确定蚀刻的结束时间。

公开(公告)号：US06797529B2

公开(公告)日：2004-09-28

申请号：US10385698

申请日：2003-03-12

申请人： Toru Otsubo ,  Tatehito Usui

发明人： Toru Otsubo ,  Tatehito Usui

IPC分类号： H01L3126

CPC分类号： G01B11/0675

摘要： A measuring apparatus includes an irradiator which irradiates measuring light from a back of a substrate as the measuring light is totally reflectable from both first and second surfaces formed on the surface sides of the substrate, and a measurement unit which causes reflected lights of the measuring light irradiated by the irradiator means and reflected from the first and second surfaces to interfere with each other to thereby measure a distance between the first and second surfaces.

摘要翻译： 测量装置包括：辐射器，当测量光从形成在基板的表面侧上的第一和第二表面全反射时，照射来自基板背面的测量光;以及测量单元，其使得测量光的反射光 由照射器装置照射并从第一表面和第二表面反射，彼此干涉，从而测量第一和第二表面之间的距离。

公开(公告)号：US06537832B2

公开(公告)日：2003-03-25

申请号：US09844629

申请日：2001-05-01

申请人： Toru Otsubo ,  Tatehito Usui

发明人： Toru Otsubo ,  Tatehito Usui

IPC分类号： H01L3126

CPC分类号： G01B11/0675

摘要： A film formation monitor of a plasma CVD apparatus includes a light source for generating measuring light. Measuring light generated from the light source is guided to an optical system having lenses and mirrors, and is irradiated to a silicon substrate at a plurality of angles of incidence with the back of the silicon substrate being substantially a focus. Reflected light from the substrate is incident into a spectroscope. An intensity of measuring light is detected for each wavelength. A calculation apparatus calculates an etching depth. Reflected light from the back of the substrate interferes with reflected light from an etchd surface. To reduce influences of reflected light from the back of the substrate, measuring light is irradiated while its angle of incidence is varied.

公开(公告)号：US5531862A

公开(公告)日：1996-07-02

申请号：US277017

申请日：1994-07-19

申请人： Toru Otsubo ,  Yasumichi Suzuki ,  Shinji Sasaki ,  Kazuhiro Ohara ,  Ichirou Sasaki

发明人： Toru Otsubo ,  Yasumichi Suzuki ,  Shinji Sasaki ,  Kazuhiro Ohara ,  Ichirou Sasaki

IPC分类号： C23C14/56 ,  C23C16/44 ,  H01J37/32 ,  H01L21/306 ,  H01L21/00

CPC分类号： H01L21/02046 ,  C23C14/564 ,  C23C16/4407 ,  H01J37/32431 ,  H01J2237/022 ,  Y10S438/906 ,  Y10S438/963

摘要： A method of and apparatus removes foreign particles in a vacuum or in a dry atmosphere before and in continuation to performing a dry process, such as a dry etching or a sputtering process. For this purpose, the foreign particles are separated from a substrate by subjecting the foreign particles to a force for separating the foreign particles from the substrate and a vibrating force for vibrating the foreign particles at the same time, and then the frequency of vibration is changed to match the resonant frequency of a vibration system formed by each of the foreign particles and the substrate, thereby applying a vibration energy to the foreign particles due to resonance. The separated foreign particles floating in a plasma are drawn to an electrode having a potential which is controlled such that a flowing-in of electrons is reduced, and the particles are discharged from the inside of the plasma. In this way, the foreign particles can be reduced and the yield of the product in manufacturing semiconductors and TFTs can be promoted. Further, a cleaning step, a film forming operation, an etching process and the like can continuously be processed, thereby achieving a reduction in steps and a promotion in productivity.

摘要翻译： 一种和设备的方法和装置在进行干法或干法蚀刻或溅射工艺之前和之后的真空或干燥气氛中去除异物。 为此目的，通过使外来颗粒受到来自基板的异物分离的力和用于同时振动异物的振动力，使外来颗粒与基板分离，然后振动频率发生变化 以匹配由每个异物和衬底形成的振动系统的谐振频率，从而由于共振而向外来颗粒施加振动能。 将等离子体中漂浮的分离的异物吸引到具有被控制的电位的电极，使得电子的流入减少，并且粒子从等离子体的内部排出。 以这种方式，可以减少外来颗粒，并且可以促进制造半导体和TFT的产品的产率。 此外，可以连续地处理清洁步骤，成膜操作，蚀刻处理等，从而实现步骤的降低和生产率的提高。

公开(公告)号：US5304277A

公开(公告)日：1994-04-19

申请号：US767798

申请日：1991-09-30

申请人： Kazuhiro Ohara ,  Toru Otsubo ,  Ichirou Sasaki

发明人： Kazuhiro Ohara ,  Toru Otsubo ,  Ichirou Sasaki

IPC分类号： C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32247 ,  H01J37/32192 ,  H01J37/32623 ,  H01J37/32688

摘要： A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing coupled therewith, and a cavity resonator for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window through which microwaves are introduced and having slots for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.

摘要翻译： 等离子体处理装置包括等离子体处理室，其具有用于放置待等离子体处理的基板的台，排气口和与其结合的等离子体处理的气体引入喷嘴，以及用于以真空方式关闭等离子体处理室的空腔谐振器， 通过其中引入微波的微波引入窗口并具有用于向等离子体处理室辐射微波的槽。 具有增加的电磁场强度的微波被提供给处理室以产生等离子体以实现衬底的处理。 仅在处理室的内壁附近形成等离子体的扩散被抑制以减少损耗的区域。

公开(公告)号：US5275977A

公开(公告)日：1994-01-04

申请号：US669526

申请日：1991-03-14

申请人： Toru Otsubo ,  Yasuhiro Yamaguchi

发明人： Toru Otsubo ,  Yasuhiro Yamaguchi

IPC分类号： H01L21/3105 ,  H01L21/316 ,  H01L21/768 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/463

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/76801 ,  H01L21/76819

摘要： Disclosed herein are an insulating film forming method for semiconductor device interconnection and a plasma treatment system for use in the method. The method comprises (i) a step of forming an insulating film free of void, on a substrate having an interconnection pattern, in which a mixed gas of a film forming source gas and an etching gas comprising a fluorine compound is used to perform both deposition of an insulating film by plasma CVD and reactive etching of the insulating film, simultaneously, and (ii) a step of planarizing the surface of the insulating film formed by the step (i) and comprised of, for example, silicon oxide, in which a gas of a material decomposable by a reactive gas capable of decomposing the insulating film is supplied onto the substrate so as to deposit a solid film of the material, e.g. Si(OCH.sub.3).sub.4, on the insulating film on the substrate, the temperature of the substrate is then raised to liquefy the deposited material film, thereby planarizing the surface of the material film, the substrate temperature is again lowered to solidify the planarized liquid material film, and thereafter the insulating film together with the Si(OCH.sub.3).sub. 4 solid film is subjected to plasma etching with, for instance, CF.sub.4 gas as an etching gas. According to the invention, an insulating film which is planar and free of voids can be formed on an interconnection pattern of a substrate, without affecting the characteristics of devices provided on the substrate.

摘要翻译： 这里公开了用于半导体器件互连的绝缘膜形成方法和用于该方法的等离子体处理系统。 该方法包括（i）在具有互连图案的基板上形成无空隙的绝缘膜的步骤，其中使用成膜源气体和包含氟化合物的蚀刻气体的混合气体进行沉积 通过等离子体CVD和绝缘膜的反应性蚀刻同时进行绝缘膜的平坦化，以及（ii）使由步骤（i）形成的由例如氧化硅构成的绝缘膜的表面平坦化的步骤，其中， 可以通过能够分解绝缘膜的反应性气体分解的材料的气体被供给到基板上，以沉积材料的固体膜，例如 Si（OCH 3）4在衬底上的绝缘膜上，然后升高衬底的温度以使沉积的材料膜液化，从而使材料膜的表面平坦化，再次降低衬底温度以固化平坦化液体材料 膜，然后将绝缘膜与Si（OCH 3）4固体膜一起用例如作为蚀刻气体的CF 4气体进行等离子体蚀刻。 根据本发明，可以在衬底的互连图案上形成平坦且无空隙的绝缘膜，而不影响设置在衬底上的器件的特性。

公开(公告)号：US4487678A

公开(公告)日：1984-12-11

申请号：US597749

申请日：1984-04-06

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

IPC分类号： H01J37/18 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  C23C15/00

CPC分类号： H01L21/302 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67745

摘要： The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

摘要翻译： 本发明涉及一种用于蚀刻形成在晶片上的铝布线膜的干蚀刻装置，更具体地说涉及一种能够在其干蚀刻期间去除沉积在晶片表面上的氯化物的干蚀刻装置，以及 作为抗蚀剂膜，而不必将晶片取出。 该干式蚀刻装置设置有蚀刻室，通过闸阀附着到蚀刻室的真空室以及与真空前厅连接的后处理室。 该设备被形成为将去除到真空前厅的蚀刻的晶片从其中被送到后处理室，然后将经后处理的晶片再次移至真空前厅，然后从其中移除到大气中。