摘要:
The bit (B6) indicating whether there is the possibility or not to normally complete the write operation by executing again the write operation is provided, together with the bit (B7) indicating whether the access is possible or not from the external side of the chip and the bit (B4) indicating whether the write operation is normally completed or not, to the status register within a non-volatile semiconductor memory device. Accordingly, it can be prevented that the effective memory capacity is reduced with an accidental write error in the electrically programmable and erasable non-volatile semiconductor memory device such as a flash memory.
摘要:
There is provided a method of programming a non-volatile memory which can solve the problem of the data write system of the existing flash memory that a load capacitance of bit lines becomes large, the time required by the bit lines to reach the predetermined potential becomes longer, thereby the time required for data write operation becomes longer and power consumption also becomes large because the more the memory capacitance of memory array increases, the longer the length of bit lines becomes and the more the number of bit lines increases. In the non-volatile memory of the invention comprising the AND type memory array in which a plurality of memory cells are connected in parallel between the local bit lines and local drain lines, the local drain lines are precharged by supplying thereto a comparatively higher voltage from the common drain line side (opposite side of the main bit lines), the main bit lines are selectively precharged by applying thereto the voltage of 0V or a comparatively small voltage depending on the write data and thereafter a drain current is applied only to the selected memory cells to which data is written by applying the write voltage to the word lines in order to implant the hot electrons to the floating gate.
摘要:
In a nonvolatile semiconductor memory device wherein a plurality of threshold voltages are set so as to store multivalued information in one memory cell, data is first written into the memory cell whose threshold voltage is the lowest as a written state from the erase level, and data is successively written into memory cells whose threshold voltages are higher.
摘要:
This invention relates to a process for producing a desulfated polysaccharide, which comprises reacting a sulfated polysaccharide having a saccharide in which a primary hydroxyl group is sulfated, as a constituent sugar, with a silylating agent represented by the following formula (I) ##STR1## wherein R.sup.1 s are the same or different and each represent a hydrogen atom or a halogen atom, R.sup.2 represents a lower alkyl group, and R.sup.3 s are the same or different and each represent a lower alkyl group, an aryl group or a halogen atom,and a desulfated heparin obtained by this production process.
摘要:
A control of a flash memory includes control for supplying a pulse-shaped voltage to each of non-volatile memory cells until a threshold voltage of the non-volatile memory cell having a first threshold voltage is changed to a second threshold voltage. The control involves a first write mode (coarse write) in which the amount of change in threshold voltage of each non-volatile memory cell, which is varied each time the pulse-shaped voltage is applied, is relatively rendered high, and a second write mode (high-accuracy write) in which the amount of change in threshold voltage thereof is relatively rendered low. As compared with the high-accuracy mode, the number of pulses required to change the threshold voltage of each memory cell is smaller than that in the coarse write mode. Therefore, the number of verify operations at the time that the coarse write mode is used, is small and hence the entire write operation can be speeded up.
摘要:
A vacuum pump includes a casing provided with an inlet port and an outlet port, a peripheral groove vacuum pump unit disposed in an upper section, with respect to a flow direction of the gas, of the casing, and a vortex vacuum pump unit disposed in a lower section, with respect to the flow direction of the gas, of the casing. The vacuum pump unit and the vortex vacuum pump unit have a common rotor. Since the common rotor is provided for the vacuum pump unit and the vortex vacuum pump unit, the dynamic balance of the rotor can be easily adjusted and the rotor rotates with a minimal amount of vibration.
摘要:
A developing device includes a casing to contain developer, a developer bearer, an upper and lower developer conveyors to convey the developer to one side in an axial direction of rotation shafts thereof, a communicating portion disposed on a first end side on which an input gear is disposed, to fall the developer from the upper developer conveyor to the lower developer conveyor, bearings to receive end portions the upper and lower developer conveyors, and first and second end seals to seal gaps in the bearings on the upper and lower developer conveyors, respectively. The first end seals and the second end are disposed on the first end side and a second end side, respectively. A sliding friction between the rotation shaft and at least one of the first end seals is smaller than a sliding friction between the rotation shaft and the second end seal.
摘要:
A developing device includes upper and lower developer containing portions to contain developer, arranged in a vertical direction, a first developer conveyor to convey developer in the upper developer containing portion to a first side in an axial direction of the first developer conveyor, a second developer conveyor to convey developer in the lower developer containing portion to a second side opposite the first side, a developer-lifting area in which the developer is lifted from the lower developer containing portion to the upper developer containing portion, a first lifting area gear to rotate the first developer conveyor, a second lifting area gear to rotate the second developer conveyor, and a lifting area input gear to input a driving force to the developing device. The lifting area input gear is coupled to the first lifting area gear and coupled via the first lifting area gear via to the second lifting area gear.
摘要:
A method of identifying compounds that inhibit fertilization is provided. The method can include selecting compounds that bind to equatorin protein. Two types of equatorin protein, a long form and a short form, can be present in the testis. The amino acid sequence of mouse equatorin from positions 101 to 146 including the 138th O-glycosylated threonine residue contains an epitope recognized by anti-equatorin antibody MN9 that has an effect of inhibiting fertilization. In addition, the MN9 antibody also binds to human sperm. Compounds that bind to the epitope can inhibit fertilization. Both forms of mouse equatorin can be used as well as human equatorin to identify compounds that inhibit fertilization.
摘要:
A method of identifying compounds that inhibit fertilization is provided. The method can include selecting compounds that bind to equatorin protein. Two types of equatorin protein, a long form and a short form, can be present in the testis. The amino acid sequence of mouse equatorin from positions 101 to 146 including the 138th O-glycosylated threonine residue contains an epitope recognized by anti-equatorin antibody MN9 that has an effect of inhibiting fertilization. In addition, the MN9 antibody also binds to human sperm. Compounds that bind to the epitope can inhibit fertilization. Both forms of mouse equatorin can be used as well as human equatorin to identify compounds that inhibit fertilization.