公开(公告)号：US06673671B1

公开(公告)日：2004-01-06

申请号：US09722479

申请日：2000-11-28

申请人： Hiroaki Nishimura ,  Tomoharu Mametani ,  Yukihiro Nagai ,  Akinori Kinugasa ,  Takeshi Kishida

发明人： Hiroaki Nishimura ,  Tomoharu Mametani ,  Yukihiro Nagai ,  Akinori Kinugasa ,  Takeshi Kishida

IPC分类号： H01L218242

CPC分类号： H01L27/10852 ,  H01L27/10817

摘要： There is described a semiconductor device having a storage node capacitor structure suitable for rendering memory cells compact, and storage nodes are prevented from tilting. The device includes a storage node which has a vertical surface extending in the direction perpendicular to the surface of a semiconductor substrate, and a dielectric film for tilt prevention purposes which is brought into close contact with the side surface of the vertical surface and which prevents the vertical surface from tilting.

公开(公告)号：US06437661B1

公开(公告)日：2002-08-20

申请号：US09817169

申请日：2001-03-27

申请人： Hiroaki Nishimura ,  Yukinori Miyake

发明人： Hiroaki Nishimura ,  Yukinori Miyake

IPC分类号： H01P518

摘要： A directional coupler (21) comprises main and auxiliary lines (27, 30) between dielectric boards (23, 24), a ground plate (25) provided on the outer face of the dielectric boards (23), and a conductive case (34) covering the dielectric boards (23) and (24) and making contact with the ground plate (25).

公开(公告)号：US06251741B1

公开(公告)日：2001-06-26

申请号：US09219786

申请日：1998-12-23

申请人： Akinori Kinugasa ,  Tomoharu Mametani ,  Yukihiro Nagai ,  Hiroaki Nishimura ,  Takeshi Kishida

发明人： Akinori Kinugasa ,  Tomoharu Mametani ,  Yukihiro Nagai ,  Hiroaki Nishimura ,  Takeshi Kishida

IPC分类号： H01L218242

CPC分类号： H01L27/10852 ,  H01L27/10817

摘要： There is described the manufacture of a semiconductor device having a storage node or high-yield manufacture of a compact memory IC. The present invention provides a method of manufacturing a semiconductor device including a basic dielectric layer formation step for forming a basic dielectric layer from a first dielectric material, a stopper film formation step for forming on the basic dielectric layer an etch stopper film from a second dielectric material differing from the first dielectric film, a sacrificial dielectric layer formation step for forming on the etch stopper film a sacrificial dielectric layer from the first dielectric material, a space formation step for forming a storage node formation space by removal of a predetermined area from the sacrificial dielectric layer until the etch stopper film becomes exposed, a storage node formation step for forming in the storage node formation space a storage node from a capacitive material, and a sacrificial dielectric layer removal step for removing the sacrificial dielectric layer surrounding the storage node by means of an etching operation suitable for removal of the first dielectric material.

摘要翻译： 描述了具有存储节点或紧凑型存储器IC的高产量制造的半导体器件的制造。 本发明提供一种制造半导体器件的方法，该半导体器件包括用于从第一介电材料形成基本电介质层的基本电介质层形成步骤，用于在基本电介质层上形成来自第二电介质的蚀刻停止膜的阻挡膜形成步骤 与第一介电膜不同的材料;牺牲介电层形成步骤，用于在蚀刻停止膜上形成来自第一介电材料的牺牲介电层;空间形成步骤，用于通过从第一电介质膜去除预定区域形成存储节点形成空间; 牺牲电介质层，直到蚀刻停止膜露出，存储节点形成步骤，用于在存储节点形成空间中形成存储节点与电容材料;以及牺牲介电层去除步骤，用于通过以下步骤去除存储节点周围的牺牲介电层： 蚀刻操作的手段适合于去除 l的第一介电材料。

公开(公告)号：US5270663A

公开(公告)日：1993-12-14

申请号：US906864

申请日：1992-07-01

申请人： Yoshihiko Sano ,  Hisataka Okado ,  Masahiko Miyahara ,  Hiroaki Nishimura ,  Ichiro Hosotani ,  Yoshiki Chujo

发明人： Yoshihiko Sano ,  Hisataka Okado ,  Masahiko Miyahara ,  Hiroaki Nishimura ,  Ichiro Hosotani ,  Yoshiki Chujo

IPC分类号： G01N27/22 ,  G01N33/28 ,  G01R27/26

CPC分类号： G01N33/2852 ,  G01N27/221

摘要： A liquid mixing ratio detecting apparatus is designed so that an oscillation voltage generated by an oscillation unit is applied to one of a differentiating circuit and an integrating circuit, which is constituted by a combination of a capacitor composed of a pair of opposite electrodes for detecting a mixing ratio of a mixed liquid and a resistor, and a mixing ratio detecting unit produces a signal relating to an inclination rate of one of a differential waveform signal and an integration waveform signal, which is generated by one of the differentiating circuit and the integrating circuit, respectively, thereby obtaining a signal representing the mixing ratio of the mixed liquid on the basis of the produced signal relating to the inclination rate of the waveform signal.

摘要翻译： 液体混合比检测装置被设计成使得由振荡单元产生的振荡电压被施加到微分电路和积分电路之一，该差分电路和积分电路由由一对相反电极组成的电容器组成，用于检测 混合液和电阻器的混合比，以及混合比检测单元产生与微分波形信号和积分波形信号之一的倾斜率相关的信号，该信号由微分电路和积分电路之一产生 ，从而基于与波形信号的倾斜率相关的所产生的信号获得表示混合液的混合比的信号。

公开(公告)号：USD662467S1

公开(公告)日：2012-06-26

申请号：US29409058

申请日：2011-12-20

申请人： Hiroaki Nishimura ,  Shintaro Tanaka

设计人： Hiroaki Nishimura ,  Shintaro Tanaka

公开(公告)号：US20050227065A1

公开(公告)日：2005-10-13

申请号：US10344276

申请日：2002-08-19

申请人： Hiroaki Nishimura ,  Takahiro Sakai ,  Kazuo Nate

发明人： Hiroaki Nishimura ,  Takahiro Sakai ,  Kazuo Nate

IPC分类号： C08L33/00 ,  C09J4/00 ,  C09J7/02 ,  C09J11/04 ,  B32B27/06 ,  B32B31/00

CPC分类号： C09J11/04 ,  C08L33/00 ,  C09J4/00 ,  C09J7/385 ,  Y10T428/2852

摘要： A thermo-reactive flame-retardant adhesive tape having high flame-retardancy and a method for producing the same are disclosed. The adhesive tape comprises a substrate and a solvent-less type photo-curing pressure-sensitive adhesive applied onto the substrate, the solvent-less type photo-curing pressure-sensitive adhesive comprising a photo-curing pressure-sensitive adhesive, as well as a dripping inhibitor and a flame retardant both added into the photo-curing pressure-sensitive adhesive, the photo-curing pressure-sensitive adhesive containing as main components at least a (metha)acrylic acid alkyl ester monomer, a polar group-containing monomer, and a photo-polymerization initiator. Based on 100 parts by weight of the photo-curing pressure-sensitive adhesive, 5-50 parts by weight of a hydroxyl-containing monomer having a photo-active functional group, as well as 5-100 parts by weight of phosphazene and 10-200 parts by weight of hydrated alumina, are added as the dripping inhibitor and the flame retardant, respectively, to the photo-curing pressure-sensitive adhesive.

摘要翻译： 公开了一种具有高阻燃性的热反应性阻燃性粘合带及其制造方法。 粘合带包括施加到基材上的基材和无溶剂型光固化压敏粘合剂，包含光固化压敏粘合剂的无溶剂型光固化压敏粘合剂以及 滴加抑制剂和阻燃剂都加入到光固化压敏粘合剂中，光固化压敏粘合剂含有至少一种（甲基）丙烯酸烷基酯单体，含极性基团的单体和 光聚合引发剂。 基于100重量份光固化压敏粘合剂，将5-50重量份具有光活性官能团的含羟基单体以及5-100重量份磷腈和10- 将200重量份水合氧化铝分别作为滴加抑制剂和阻燃剂加入到光固化压敏粘合剂中。

公开(公告)号：US06942522B2

公开(公告)日：2005-09-13

申请号：US10895942

申请日：2004-07-22

申请人： Hiroaki Nishimura

发明人： Hiroaki Nishimura

IPC分类号： H01P1/26 ,  H01R13/443 ,  H01R13/66

CPC分类号： H01R24/42 ,  H01P1/266 ,  H01R13/443 ,  H01R13/6616 ,  H01R2103/00

摘要： The termination device to connect with the other piece of a coaxial connector in the coaxial connector, which comprises a first component comprised of a terminal to electrically connect with the center conductor of the other piece of the coaxial connector and an outer conductive piece to electrically connect with the outer conductor of the other piece of the coaxial connector, and a second component comprised of a ground conductive piece to electrically connect with the outer conductor of the first component, a relay section to elastically connect with the terminal of the first component at least in the axial direction, and a resistive element that is electrically connected with the ground conductive piece and the relay section and electrically connects between the ground connector and the center conductor of the other piece of the coaxial connector.

公开(公告)号：US20050026504A1

公开(公告)日：2005-02-03

申请号：US10895942

申请日：2004-07-22

申请人： Hiroaki Nishimura

发明人： Hiroaki Nishimura

IPC分类号： H01P1/26 ,  H01R13/443 ,  H01R13/66

CPC分类号： H01R24/42 ,  H01P1/266 ,  H01R13/443 ,  H01R13/6616 ,  H01R2103/00

摘要： The termination device to connect with the other piece of a coaxial connector in the coaxial connector, which comprises a first component comprised of a terminal to electrically connect with the center conductor of the other piece of the coaxial connector and an outer conductive piece to electrically connect with the outer conductor of the other piece of the coaxial connector, and a second component comprised of a ground conductive piece to electrically connect with the outer conductor of the first component, a relay section to elastically connect with the terminal of the first component at least in the axial direction, and a resistive element that is electrically connected with the ground conductive piece and the relay section and electrically connects between the ground connector and the center conductor of the other piece of the coaxial connector.

摘要翻译： 该终端装置与同轴连接器中的同轴连接器的另一片连接，该同轴连接器包括第一部件，该第一部件由与该另一个同轴连接器的中心导体电连接的端子和外部导电件电连接 与同轴连接器的另一片的外导体以及由接地导电片构成的第二部件，以与第一部件的外导体电连接;中继部，至少与第一部件的端子弹性连接 以及电阻元件，其与接地导电片和继电器部分电连接并且电连接在接地连接器和另一个同轴连接器的中心导体之间。

公开(公告)号：US06313005B1

公开(公告)日：2001-11-06

申请号：US09610428

申请日：2000-07-05

申请人： Takeshi Kishida ,  Akinori Kinugasa ,  Yoji Nakata ,  Tomoharu Mametani ,  Shigenori Kido ,  Yukihiro Nagai ,  Hiroaki Nishimura ,  Jiro Matsufusa

发明人： Takeshi Kishida ,  Akinori Kinugasa ,  Yoji Nakata ,  Tomoharu Mametani ,  Shigenori Kido ,  Yukihiro Nagai ,  Hiroaki Nishimura ,  Jiro Matsufusa

IPC分类号： H01L2120

CPC分类号： H01L28/91 ,  H01L27/10855 ,  H01L28/84

摘要： Provided is a method of manufacturing a semiconductor device having a capacitor above a semiconductor substrate, with which it is possible to reduce the number of steps and the cost of manufacture. Specifically, a polysilicon layer (12) in which impurity is diffused is deposited on the entire surface including the inside of a hole (8A). An etching process of the polysilicon layer (12) is performed to form a storage node electrode composed of the polysilicon layer (12) remaining on the bottom and side of a groove for metallization (15) and in the hole (8A). The storage node electrode is broadly divided into a storage node electrode body disposed on the bottom and side of the groove for metallization (15), and a plug part disposed in the hole (8A). The storage node electrode is electrically connected via the plug part to a diffused region (19) of a semiconductor substrate (1).

摘要翻译： 提供一种制造半导体器件的方法，该半导体器件具有在半导体衬底上方的电容器，由此可以减少步骤数量和制造成本。 具体而言，在包括孔（8A）的内部的整个表面上沉积杂质扩散的多晶硅层（12）。 执行多晶硅层（12）的蚀刻工艺以形成由残留在金属化槽（15）的底部和侧面上的多晶硅层（12）和孔（8A）组成的存储节点电极。 存储节点电极大致分为设置在用于金属化的槽的底部和侧面上的存储节点电极体（15）和设置在孔（8A）中的插头部分。 存储节点电极经由插头部电连接到半导体衬底（1）的扩散区域（19）。

公开(公告)号：US5929084A

公开(公告)日：1999-07-27

申请号：US860524

申请日：1997-06-27

申请人： Dayuan Zhu ,  Xican Tang ,  Jinlai Lin ,  Cheng Zhu ,  Jingkang Shen ,  Guansong Wu ,  Shanhao Jiang ,  Takuji Yamaguchi ,  Kazuhiro Tanaka ,  Takeshi Wakamatsu ,  Hiroaki Nishimura

发明人： Dayuan Zhu ,  Xican Tang ,  Jinlai Lin ,  Cheng Zhu ,  Jingkang Shen ,  Guansong Wu ,  Shanhao Jiang ,  Takuji Yamaguchi ,  Kazuhiro Tanaka ,  Takeshi Wakamatsu ,  Hiroaki Nishimura

IPC分类号： A61K31/435 ,  A61K31/439 ,  A61K31/44 ,  A61K31/4427 ,  A61K31/443 ,  A61K31/444 ,  A61K31/4748 ,  A61K36/18 ,  A61P21/00 ,  A61P25/28 ,  C07D221/22 ,  C07D401/06 ,  C07D401/12 ,  C07D401/14 ,  C07D405/12 ,  C07D221/06

CPC分类号： C07D401/06 ,  C07D221/22 ,  C07D401/12 ,  C07D401/14 ,  C07D405/12

摘要： The present invention relates to novel huperzine A derivatives of formula (II), wherein Y is ##STR1## or R" and Y together form .dbd.CH; R is (C.sub.1 -C.sub.5) alkyl, ##STR2## wherein n is 0 or 1, X is H, (C.sub.1 -C.sub.5) alkyl; (C.sub.1 -C.sub.5) alkyloxy; nitro, halogen, carboxy, alkyloxycarbonyl, hydroxymethyl, hydroxy, amino substituted by bis-(C.sub.1 -C.sub.5) alkyl; --(CH.sub.2).sub.m COOZ, wherein m=0-5, Z is H or (C.sub.1 -C.sub.5) alkyl; --CH.dbd.CH--G, wherein G is phenyl, furanyl, carboxy, alkyloxycarbonyl; and dihydro- or tetrahydro-pyridyl substituted by (C.sub.1 -C.sub.5) alkyl at the nitrogen atom; R' is H, (C.sub.1 -C.sub.5) alkyl, pyridoyl, benzoyl substituted by (C.sub.1 -C.sub.5) alkyloxy; R" is H or (C.sub.1 -C.sub.5) alkyl; processes for their use as acetylcholinesterase inhibitor. ##STR3##

摘要翻译： PCT No.PCT / CN95 / 00100 Sec。 371日期：1997年6月27日 102（e）日期1997年6月27日PCT提交1995年12月26日PCT公布。 公开号WO96 / 20176 日期：1996年7月4日本发明涉及式（Ⅱ）的新型石杉碱甲衍生物，其中Y为或R“和Y一起形成= CH; R为（C 1 -C 5）烷基，其中n为0或1，X为H，（C 1 -C 5）烷基; （C1-C5）烷氧基; 硝基，卤素，羧基，烷氧基羰基，羟甲基，羟基，被双 - （C 1 -C 5）烷基取代的氨基; - （CH 2）m COOZ，其中m = 0-5，Z是H或（C 1 -C 5）烷基; -CH = CH-G，其中G是苯基，呋喃基，羧基，烷氧基羰基; 在氮原子被（C 1 -C 5）烷基取代的二氢或四氢吡啶基; R'是H，（C1-C5）烷基，吡啶基，（C1-C5）烷氧基取代的苯甲酰基; R“是H或（C 1 -C 5）烷基; 它们用作乙酰胆碱酯酶抑制剂的方法。