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公开(公告)号：US20080308134A1
公开(公告)日：2008-12-18
申请号：US11850154
申请日：2007-09-05
IPC分类号： B08B3/00
CPC分类号： B08B7/0035 , H01L21/67069 , H01L21/6708
摘要： The invention provides a substrate processing apparatus capable of removing unnecessary deposition films attached to a bevel portion of a substrate to be processed with high efficiency and at low cost without causing damage to the inner areas of the substrate to be processed having patterns formed thereto and without causing heavy metal contamination. The substrate processing apparatus comprises a rotary stage 1 on which a substrate 2 to be processed is placed having a smaller diameter than the diameter of the substrate 2, a gas supply structure unit 3 disposed above the substrate 2 to be processed for forming a gas flow for protecting a pattern formed on an upper surface of the substrate to be processed, a first gas supply system 11 for supplying nonreactive gas to the gas supply structure unit 3, an atmospheric pressure microplasma source 4 having a nozzle for supplying radicals for removing unnecessary deposits on an outer circumference portion of the substrate to be processed, a second gas supply system 14 for supplying gas to the atmospheric pressure microplasma source 4, a high frequency power supply 13 for supplying power to the atmospheric pressure microplasma source 4, and a vacuum means 5 for vacuuming and removing reaction products from the outer circumference portion of the substrate 2 to be processed.
摘要翻译： 本发明提供了一种基板处理装置，其能够以高效率和低成本地去除附着在待处理基板的斜面部分上的不必要的沉积膜，而不会对被加工的基板的内部区域造成损害，所述内部区域形成有图案并且没有 造成重金属污染。 基板处理装置包括：旋转台1，其上放置直径小于基板2的直径的待加工基板2;气体供给结构单元3，设置在待加工基板2的上方，用于形成气流 用于保护形成在待处理基板的上表面上的图案，用于向气体供应结构单元3供应非反应性气体的第一气体供应系统11，具有用于提供自由基的喷嘴以除去不需要的沉积物的大气压微量源4 在待处理基板的外周部分上设置用于向大气压原子源4供给气体的第二气体供给系统14，向大气压等离子体源4供电的高频电源13，以及真空装置 5，用于对待处理的基板2的外周部分进行真空和去除反应产物。
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公开(公告)号：US20080236748A1
公开(公告)日：2008-10-02
申请号：US11835449
申请日：2007-08-08
IPC分类号： H01L21/306
CPC分类号： H01J37/32935 , H01J37/32522 , H01J37/32623 , H01J37/32642 , H01J37/32954 , H01J37/32972
摘要： In a plasma processing apparatus including a processing chamber, a high-frequency power supply needed for plasma production, a unit that feeds a gas to the processing chamber, a shower plate, an exhausting unit that depressurizes the processing chamber, a stage on which a sample to be processed is placed, and a focus ring, the temperature of the focus ring can be regulated. A unit that measures a gas temperature distribution in the processing chamber is included. Based on the result of measurement of the gas temperature distribution, the temperature of the focus ring is controlled so that the gas temperature in the surface of the sample to be processed will be uniform.
摘要翻译： 在包括处理室，等离子体生产所需的高频电源，向处理室供给气体的单元，喷淋板，对处理室进行减压的排气单元的等离子体处理装置中， 放置待处理的样品和聚焦环，可以调节聚焦环的温度。 包括测量处理室中的气体温度分布的单元。 基于气体温度分布的测量结果，控制聚焦环的温度，使待处理样品的表面中的气体温度均匀。
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23.发明申请SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS CAPABLE OF REDUCING PARTICLE CONTAMINATION 审中-公开减少颗粒污染的半导体器件制造设备公开(公告)号：US20080017318A1
公开(公告)日：2008-01-24
申请号：US11668038
申请日：2007-01-29
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： In a semiconductor device manufacturing apparatus which is equipped with: a process chamber; a unit for supplying gas to said process chamber; a exhausting unit to reduce pressure in said process chamber; a high frequency power source for plasma generation; a coil for generating a magnetic field; and a mounted electrode for mounting a substance to be processed, particles were transported in the circumference direction of said substance to be processed by thermo-phoretic force, by changing the magnetic field distribution, so as to make a plasma distribution at the surface of said substance to be processed, in a convex form, in ignition of the plasma or after completion of a predetermined processing, compared with the plasma distribution during said predetermined processing to said substance to be processed, and thus to generate temperature gradient of processing gas just above said substance to be processed.
摘要翻译： 在配备有处理室的半导体装置制造装置中， 用于向所述处理室供应气体的单元; 用于减少所述处理室中的压力的排气单元; 用于等离子体产生的高频电源; 用于产生磁场的线圈; 以及安装用于安装被处理物质的安装电极，通过改变磁场分布，通过热电解力将粒子沿着所述待加工物质的周向方向输送，以使所述等离子体分布在所述 与所述预定处理期间的等离子体分布相比，等离子体点火时或者在完成预定处理后，处于凸形状的物质与刚刚上述的处理气体的温度梯度相比较 说物质被处理。
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24.发明申请Semiconductor Device Manufacturing Apparatus Capable Of Reducing Particle Contamination 审中-公开具有降低粒子污染的半导体器件制造装置公开(公告)号：US20120003837A1
公开(公告)日：2012-01-05
申请号：US13229843
申请日：2011-09-12
IPC分类号： H01L21/3065 , H01L21/31
CPC分类号： C23C16/4401 , H01J37/32091 , H01J37/32678 , H01J2237/022
摘要： A plasma processing method of subjecting a substance to plasma processing by using a semiconductor device manufacturing apparatus including a process chamber, a unit for supplying gas to the process chamber, an exhausting unit to reduce pressure in the process chamber, a high frequency power source for plasma generation, a coil for generating a magnetic field, and a mounted electrode for mounting the substance to be processed. The method includes steps of subjecting the substance to a predetermined plasma processing, changing the magnetic field distribution, so as to make a plasma distribution of the process chamber with respect to the surface of the substance to be processed, in a convex form, at a time of igniting the plasma and after completion of the predetermined plasma processing, as compared with a plasma distribution with respect to the surface of the substance to be processed during the predetermined plasma processing.
摘要翻译： 一种等离子体处理方法，其通过使用包括处理室的半导体器件制造装置，用于向处理室供应气体的单元，用于减少处理室中的压力的排出单元，等离子体处理方法，用于 等离子体产生，用于产生磁场的线圈和用于安装待处理物质的安装电极。 该方法包括以下步骤：使物质经受预定的等离子体处理，改变磁场分布，以便使处理室相对于待处理物质表面的等离子体分布呈凸形， 与预定等离子体处理期间相对于被处理物质的表面的等离子体分布相比，点火等离子体的时间和预定等离子体处理完成后的时间。
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公开(公告)号：US20080216959A1
公开(公告)日：2008-09-11
申请号：US11835446
申请日：2007-08-08
IPC分类号： H01L21/306
CPC分类号： H01L21/02087 , H01L21/67069 , H01L21/67115 , H01L21/6719 , H01L21/67745 , H01L21/681
摘要： The present invention provides a plasma processing apparatus which has the function of removing a deposit adhering to the periphery of the backside of a sample and has high throughput and low cost. That is, a deposit removal unit for removing the deposit on the periphery of the backside of the sample by pulsed laser irradiation is connected to an atmosphere-side transfer chamber of the plasma processing apparatus.
摘要翻译： 本发明提供一种等离子体处理装置，其具有除去附着在样品背面周围的沉积物，并且生产量高，成本低的功能。 也就是说，用于通过脉冲激光照射去除样品背面周围的沉积物的沉积物去除单元连接到等离子体处理装置的气氛侧传送室。
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26.发明申请Semiconductor manufacturing apparatus capable of preventing adhesion of particles 审中-公开能够防止颗粒附着的半导体制造装置公开(公告)号：US20060169207A1
公开(公告)日：2006-08-03
申请号：US11068780
申请日：2005-03-02
CPC分类号： H01L21/67742 , C23C16/4401 , H01J2237/022 , H01L21/67017 , H01L21/67748
摘要： A semiconductor manufacturing apparatus includes a vacuum processing chamber and a transportation chamber each including a gas supply unit and a gas exhaust unit, a sample placing electrode for placing a sample thereon and holding the sample in the processing chamber, a gate valve for opening/closing a passage between the processing chamber and the transportation chamber, a transportation device including a transportation arm disposed in the transportation chamber and a sample holding portion disposed at a tip of the arm to hold the sample on the sample holding portion, transport the sample from the transportation chamber to the processing chamber, and transport the processed sample from the processing chamber to the transportation chamber, and a gas blowing unit for blowing gas against the sample so as to be interlocked with a transportation position of the sample being transported to prevent adhesion of floating particles to a surface of the sample.
摘要翻译： 半导体制造装置包括真空处理室和输送室，每个真空处理室和输送室均包括气体供给单元和排气单元，用于将样品放置在其上并将样品保持在处理室中的样品放置电极，用于打开/关闭的闸阀 所述处理室与所述输送室之间的通道，包括设置在所述输送室中的输送臂的输送装置和设置在所述臂的前端的样品保持部，以将样品保持在所述样品保持部上， 运送室到处理室，并将处理后的样品从处理室输送到运送室;以及气体吹送单元，用于将气体吹向样品，以与被运送的样品的运输位置互锁，以防止粘附 漂浮的颗粒到样品的表面。
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27.发明申请PLASMA PROCESSING APPARATUS CAPABLE OF CONTROLLING PLASMA EMISSION INTENSITY 失效能够控制等离子体排放强度的等离子体处理装置公开(公告)号：US20080210376A1
公开(公告)日：2008-09-04
申请号：US12105018
申请日：2008-04-17
IPC分类号： C23F1/02 , C23C16/513
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译： 具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。 发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。 控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。 控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。
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28.发明申请Plasma processing apparatus capable of controlling plasma emission intensity 审中-公开能够控制等离子体发射强度的等离子体处理装置公开(公告)号：US20060169410A1
公开(公告)日：2006-08-03
申请号：US11065078
申请日：2005-02-25
IPC分类号： C23F1/00
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译： 具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。 发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。 控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。 控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。
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29.发明授权Plasma processing apparatus capable of controlling plasma emission intensity 失效能够控制等离子体发射强度的等离子体处理装置公开(公告)号：US07658815B2
公开(公告)日：2010-02-09
申请号：US12105018
申请日：2008-04-17
IPC分类号： C23F1/02 , C23C16/513
CPC分类号： H01J37/32935 , H01J37/32082 , H01J2237/3341
摘要： An antenna electrode having a substantially circular shape, is arranged on a plane of a processing vessel, which is located opposite to a stage for mounting a sample within the processing vessel, and positioned parallel to the stage. An emission monitor monitors emission intensity of plasma present in at least 3 different points along a radial direction of the antenna electrode. A control unit adjusts an energizing current supplied to an external coil for forming a magnetic field within the processing vessel. The control unit adjusts the energizing current supplied to the external coil based upon the monitoring result obtained from the emission monitor so as to control the emission intensity of the plasma to become uniform emission intensity.
摘要翻译： 具有大致圆形形状的天线电极被布置在处理容器的平面上，该处理容器的平面位于与用于将样品安装在处理容器内并平行于平台的台的相对的位置。 发射监视器监视沿着天线电极的径向至少3个不同点存在的等离子体的发射强度。 控制单元调节提供给外部线圈的激励电流，以在处理容器内形成磁场。 控制单元基于从发射监视器获得的监视结果来调节供给外部线圈的通电电流，以控制等离子体的发射强度变为均匀的发射强度。
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公开(公告)号：US08496781B2
公开(公告)日：2013-07-30
申请号：US11182793
申请日：2005-07-18
申请人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
发明人： Kenetsu Yokogawa , Kenji Maeda , Masaru Izawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H05B31/26
CPC分类号： H01J37/32174 , H01J37/32082
摘要： The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation. The plasma processing apparatus according to the invention is based upon the dry etching apparatus having parallel plate structure and is characterized in that a low-pass filter having high impedance to a frequency of a high frequency power source for generating discharge, having small resistance to direct current and grounded is connected to an electrode for generating discharge which is arranged in a position opposite to the work piece and to which the high frequency power source for generating discharge is connected or a low-pass filter having small resistance to direct current and grounded and a direct-current power source connected in series with it are connected to the electrode for generating discharge.
摘要翻译： 本发明提供了一种基于干蚀刻装置的等离子体处理装置，其可以抑制由溅射引起的工件对真空室的壁的污染，异物的发生，运行成本的增加 更换真空室的壁和操作速度的恶化。 根据本发明的等离子体处理装置基于具有平行板结构的干式蚀刻装置，其特征在于，具有高阻抗频率的低通滤波器，用于产生放电的高频电源的频率，具有较小的直接阻抗 电流和接地连接到用于产生放电的电极，其布置在与工件相对的位置，并且用于产生放电的高频电源被连接到该电极上，或者具有对直流电阻和接地电阻小的低通滤波器， 与其串联连接的直流电源连接到用于产生放电的电极。
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