公开(公告)号：US07362638B2

公开(公告)日：2008-04-22

申请号：US11017641

申请日：2004-12-22

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C7/02

CPC分类号： G11C11/4097 ,  G11C7/062 ,  G11C7/18 ,  G11C11/4091 ,  G11C2207/002

摘要： The present invention relates to a semiconductor memory device for sensing voltages of bit lines in high speed. The semiconductor memory device for sensing voltages of bit lines in high speed includes: a first bit line pair to a fourth bit line pair each coupled to a different unit cell array; a bit line sense amplifying means coupled to the first bit line pair to the fourth bit line pair for amplifying data transmitted through the first bit line pair to the fourth bit line pair; and a switching block for connecting one of the first bit line pair to the fourth bit line pair with the bit line sense amplifying means in response to a control signal.

公开(公告)号：US20080079472A1

公开(公告)日：2008-04-03

申请号：US11823373

申请日：2007-06-26

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： H03K3/017 ,  G01R19/00

CPC分类号： G11C5/145 ,  G11C5/143 ,  G11C7/12 ,  G11C11/4074 ,  G11C11/4094 ,  H03K5/04 ,  H03K2005/00293

摘要： An over-driver control signal generating apparatus includes a pulse generating unit for generating a pulse signal having a pulse width corresponding to a desired over-driving interval in response to an over-driving signal; a supply voltage level detecting unit for detecting a voltage level of a supply voltage to generate a detecting signal; and a selecting unit for outputting the pulse signal as a bit line over-driver control signal in response to the detecting signal.

摘要翻译： 过驱动器控制信号发生装置包括脉冲发生单元，用于响应于过驱动信号产生具有与期望的过驱动间隔对应的脉冲宽度的脉冲信号; 电源电压电平检测单元，用于检测电源电压的电压电平以产生检测信号; 以及选择单元，用于响应于检测信号而将脉冲信号作为位线过驱动器控制信号输出。

公开(公告)号：US20070070723A1

公开(公告)日：2007-03-29

申请号：US11527440

申请日：2006-09-27

申请人： Khil-Ohk Kang ,  Young-Hoon Oh

发明人： Khil-Ohk Kang ,  Young-Hoon Oh

IPC分类号： G11C5/14

CPC分类号： G11C5/14 ,  G11C5/147

摘要： An internal voltage generator for a semiconductor memory device is provided. The internal voltage generator includes a first reference voltage generator for generating a first reference voltage, a second reference voltage generator for generating a second reference voltage, a core voltage generator for raising a core voltage based on the first reference voltage, and a core voltage discharger for discharging the core voltage depending on the second reference voltage.

摘要翻译： 提供了一种用于半导体存储器件的内部电压发生器。 内部电压发生器包括用于产生第一参考电压的第一参考电压发生器，用于产生第二参考电压的第二参考电压发生器，用于基于第一参考电压提高核心电压的核心电压发生器，以及核心电压放电器 用于根据第二参考电压放电核心电压。

公开(公告)号：US08487603B2

公开(公告)日：2013-07-16

申请号：US11822270

申请日：2007-07-03

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G05F1/595 ,  G05F1/613 ,  G05F1/614

CPC分类号： G11C5/147

摘要： A voltage generating circuit of semiconductor integrated circuit includes: a voltage controller that detects the level of an external supply voltage and outputs a voltage control signal; a voltage supplier that outputs the external supply voltage or a first internal voltage in response to the voltage control signal; and a first reference voltage generator that is supplied with an output voltage of the voltage supplier and generates a first reference voltage.

摘要翻译： 半导体集成电路的电压产生电路包括：电压控制器，其检测外部电源电压的电平并输出电压控制信号; 电压供给器，其响应于所述电压控制信号输出所述外部电源电压或第一内部电压; 以及第一参考电压发生器，其被提供有电压供应器的输出电压并产生第一参考电压。

公开(公告)号：US08461859B2

公开(公告)日：2013-06-11

申请号：US12495143

申请日：2009-06-30

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G01R31/26

CPC分类号： G01R31/2884 ,  G01R31/2889 ,  G01R31/31926

摘要： A semiconductor device includes a common probing pad; an internal voltage generation unit having a plurality of internal voltage generation blocks configured to generate a plurality of internal voltages; and a probing voltage selection unit configured to transfer an internal voltage selected from the internal voltages to the common probing pad in response to a plurality of voltage selection signals.

摘要翻译： 一种半导体器件包括一个通用探测器; 内部电压产生单元，具有被配置为产生多个内部电压的多个内部电压产生块; 以及探测电压选择单元，被配置为响应于多个电压选择信号将从内部电压选择的内部电压传送到公共探测焊盘。

公开(公告)号：US08203891B2

公开(公告)日：2012-06-19

申请号：US13101558

申请日：2011-05-05

申请人： Woo-Seung Han ,  Khil-Ohk Kang

发明人： Woo-Seung Han ,  Khil-Ohk Kang

IPC分类号： G11C5/14

CPC分类号： G11C5/145

摘要： A voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.

摘要翻译： 提供了能够控制在低电压环境下稳定产生的泵浦电压的电压检测电路。 电压检测电路包括具有第一和第二端子的电流镜，第一开关元件，被配置为通过参考电压来控制电流镜的第一端子上的电流;第二开关元件，被配置为控制来自电流的第二端子的电流 响应于泵浦电压反射镜;以及第三开关元件，其被配置为控制第一和第二开关元件的电流源以接收负电压。

公开(公告)号：US20110242920A1

公开(公告)日：2011-10-06

申请号：US13101558

申请日：2011-05-05

申请人： Woo-Seung HAN ,  Khil-Ohk Kang

发明人： Woo-Seung HAN ,  Khil-Ohk Kang

IPC分类号： G11C7/06

CPC分类号： G11C5/145

摘要： Herein, a voltage sensing circuit, which is capable of controlling a pumping voltage to be stably generated in a low voltage environment, is provided. The voltage sensing circuit includes a current mirror having first and second terminals, a first switching element configured to control current on the first terminal of the current mirror by a reference voltage, a second switching element configured to control current from the second terminal of the current mirror in response to a pumping voltage, and a third switching element configured to control current sources of the first and second switching elements to receive a negative voltage.

公开(公告)号：US07936632B2

公开(公告)日：2011-05-03

申请号：US12493976

申请日：2009-06-29

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C5/14

CPC分类号： G11C5/147 ,  G11C11/4074

摘要： A semiconductor device includes an internal circuit configured to receive a first power supply voltage applied via a first power input terminal through a first power supply path and receive an internal power supply voltage to perform a predetermined circuit operation and an internal power supply voltage generator configured to receive a second power supply voltage for a power circuit applied via a second power input terminal through a second power supply path and generate the internal power supply voltage, wherein the second power supply path is separated from the first power supply path.

摘要翻译： 半导体器件包括：内部电路，被配置为经由第一电源路径接收经由第一电力输入端子施加的第一电源电压，并且接收内部电源电压以执行预定的电路操作;以及内部电源电压发生器， 通过第二电源路径接收通过第二电力输入端施加的电源电路的第二电源电压，并产生内部电源电压，其中第二电源路径与第一电源路径分离。

公开(公告)号：US07936613B2

公开(公告)日：2011-05-03

申请号：US12210927

申请日：2008-09-15

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： G11C7/06

CPC分类号： G11C11/4074 ,  G11C5/143 ,  G11C7/08 ,  G11C11/4091

摘要： A charge driving circuit and a discharge driving circuit occupy a relatively small area and maintain driving force in a semiconductor memory device having a plurality of banks. The semiconductor memory device includes multiple banks, a common discharge level detector configured to detect a voltage level of internal voltage terminals on the basis of a first target level in response to active signals corresponding to the respective banks, and a discharge drivers assigned to the respective banks. The discharge drivers are configured to drive the internal voltage terminals to be discharged in response to the respective active signals and respective discharge control signals outputted from the common discharge level detector.

摘要翻译： 充电驱动电路和放电驱动电路在具有多个存储体的半导体存储器件中占据相对小的面积并保持驱动力。 半导体存储器件包括多个存储体，公共放电电平检测器被配置为响应于对应于各个存储体的有效信号，基于第一目标电平来检测内部电压端子的电压电平，以及分配给各个存储器的放电驱动器 银行。 放电驱动器被配置为响应于从公共放电电平检测器输出的相应的有效信号和各个放电控制信号来驱动内部电压端子被放电。

公开(公告)号：US20100315133A1

公开(公告)日：2010-12-16

申请号：US12495282

申请日：2009-06-30

申请人： Khil-Ohk Kang

发明人： Khil-Ohk Kang

IPC分类号： H03L7/00

CPC分类号： H03K17/20 ,  G11C5/143

摘要： A power-up circuit for a semiconductor memory device includes a voltage division unit configured to divide a power supply voltage, a first power-up generation unit configured to detect a voltage level of a first divided voltage of the voltage division unit during an initial stage of applying a power supply to generate a first power-up signal and a second power-up generation unit configured to detect a voltage level of a second divided voltage of the voltage division unit, after the first power-up signal is generated from the first power-up generation unit, to generate a second power-up signal.

摘要翻译： 半导体存储器件的上电电路包括：分压单元，被配置为分配电源电压;第一上电生成单元，被配置为在初始阶段检测分压单元的第一分压的电压电平 施加电源以产生第一上电信号;以及第二上电生成单元，被配置为在从所述第一上电信号生成所述第一上电信号之后检测所述分压单元的第二分压的电压电平 上电生成单元，以产生第二上电信号。