公开(公告)号：US20050248888A1

公开(公告)日：2005-11-10

申请号：US11091623

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US06888703B2

公开(公告)日：2005-05-03

申请号：US09953539

申请日：2001-09-17

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

公开(公告)号：US20050024792A1

公开(公告)日：2005-02-03

申请号：US10631840

申请日：2003-07-31

申请人： Min Li ,  Kunliang Zhang ,  Rachid Sbiaa ,  Cheng Horng ,  Simon Liao ,  Kochan Ju

发明人： Min Li ,  Kunliang Zhang ,  Rachid Sbiaa ,  Cheng Horng ,  Simon Liao ,  Kochan Ju

IPC分类号： C21D1/04 ,  G11B5/39 ,  H01F10/32 ,  H01F41/30 ,  G11B5/33 ,  G11B5/127 ,  H01F1/00 ,  H04R31/00

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  Y10T29/49034 ,  Y10T29/49044

摘要： Replacing ruthenium with rhodium as the AFM coupling layer in a synthetically pinned CPP GMR structure enables the AP1/AP2 thicknesses to be increased. This results in improved stability and allows the free layer and AFM layer thicknesses to be decreased, leading to an overall improvement in the device performance. Another key advantage of this structure is that the magnetic annealing requirements (to establish antiparallelism between AP1 and AP2) can be significantly relaxed.

摘要翻译： 在合成固定的CPP GMR结构中用铑代替钌作为AFM偶合层，可以提高AP1 / AP2的厚度。 这导致改进的稳定性并且允许降低自由层和AFM层厚度，导致器件性能的总体改善。 这种结构的另一个关键优点是可以显着放松磁性退火要求（建立AP1和AP2之间的反平行度）。

公开(公告)号：US06985337B2

公开(公告)日：2006-01-10

申请号：US11091281

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US20050122638A1

公开(公告)日：2005-06-09

申请号：US11036922

申请日：2005-01-14

申请人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

发明人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

摘要翻译： 提供了图案化，纵向和横向反铁磁交换偏置GMR传感器，其具有窄的有效轨迹宽度和减少的侧读数。 交换偏置显着降低了由导电引线下方的铁磁自由层部分产生的信号，同时仍然提供了一个很强的钉扎场，以保持传感器的稳定性。 在横向偏置传感器的情况下，自由和偏压层与被钉扎层的方向相同的磁化简化了制造工艺，并且通过消除了电流分流的必要性，可以形成较薄的引线。

公开(公告)号：US20050168881A1

公开(公告)日：2005-08-04

申请号：US11091282

申请日：2005-03-28

申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

公开(公告)号：US08178363B2

公开(公告)日：2012-05-15

申请号：US13373127

申请日：2011-11-04

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/336 ,  H01L21/8246

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US08062909B2

公开(公告)日：2011-11-22

申请号：US12661365

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/336 ,  H01L21/8246

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

公开(公告)号：US08039885B2

公开(公告)日：2011-10-18

申请号：US12661345

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L29/94

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US20070148786A1

公开(公告)日：2007-06-28

申请号：US11317388

申请日：2005-12-22

申请人： Cheng Horng ,  Ru-Ying Tong

发明人： Cheng Horng ,  Ru-Ying Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/5853 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307

摘要： An improved tunneling barrier layer is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC sputtering and converted to magnesium oxide through radical oxidation. This is followed by a second, thinner, magnesium layer that is converted to magnesium oxide through normal oxidation. Optionally, there may also be a thin layer of magnesium on the two magnesium oxide layers.

摘要翻译： 形成用于MTJ装置的改进的隧道势垒层。 这通过在两个步骤中形成隧道势垒层来实现。 首先，通过DC溅射沉积一层镁，并通过自由基氧化转化为氧化镁。 之后是第二个较薄的镁层，通过正常氧化将其转化为氧化镁。 任选地，在两个氧化镁层上也可以有一薄层的镁。