公开(公告)号：US08178363B2

公开(公告)日：2012-05-15

申请号：US13373127

申请日：2011-11-04

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/336 ,  H01L21/8246

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US08062909B2

公开(公告)日：2011-11-22

申请号：US12661365

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L21/336 ,  H01L21/8246

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

公开(公告)号：US08039885B2

公开(公告)日：2011-10-18

申请号：US12661345

申请日：2010-03-16

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L29/94

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。

公开(公告)号：US20070148786A1

公开(公告)日：2007-06-28

申请号：US11317388

申请日：2005-12-22

申请人： Cheng Horng ,  Ru-Ying Tong

发明人： Cheng Horng ,  Ru-Ying Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/5853 ,  H01F10/3254 ,  H01F41/18 ,  H01F41/307

摘要： An improved tunneling barrier layer is formed for use in a MTJ device. This is accomplished by forming the tunneling barrier layer in two steps. First a layer of magnesium is deposited by DC sputtering and converted to magnesium oxide through radical oxidation. This is followed by a second, thinner, magnesium layer that is converted to magnesium oxide through normal oxidation. Optionally, there may also be a thin layer of magnesium on the two magnesium oxide layers.

摘要翻译： 形成用于MTJ装置的改进的隧道势垒层。 这通过在两个步骤中形成隧道势垒层来实现。 首先，通过DC溅射沉积一层镁，并通过自由基氧化转化为氧化镁。 之后是第二个较薄的镁层，通过正常氧化将其转化为氧化镁。 任选地，在两个氧化镁层上也可以有一薄层的镁。

公开(公告)号：US20060057745A1

公开(公告)日：2006-03-16

申请号：US11268352

申请日：2005-11-07

申请人： Cheng Horng ,  Ru-Ying Tong

发明人： Cheng Horng ,  Ru-Ying Tong

IPC分类号： H01L21/00

CPC分类号： H01L43/08 ,  H01L43/12

摘要： An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) has a tunneling barrier layer of substantially uniform and homogeneous Al2O3 stoichiometry. The barrier layer is formed by depositing Al on a CoFe layer or a CoFe—NiFe bilayer having an oxygen surfactant layer formed thereon, then oxidizing the Al by radical oxidation. The underlying surfactant layer contributes oxygen to the bottom surface of the Al, forming an initial amorphous Al2O3 layer. This layer produces small, uniform grains in the remaining Al layer, which promotes a uniform oxidation of the Al between its upper and lower surfaces by the subsequent radical oxidation. A final annealing process to set a pinned layer magnetization enhances the homogeneous oxidation of the layer.

摘要翻译： MTJ（磁性隧道结）MRAM（磁性随机存取存储器）具有基本上均匀且均匀的Al 2 O 3 O 3化学计量的隧道势垒层。 通过在其上形成有氧表面活性剂层的CoFe层或CoFe-NiFe双层上沉积Al，然后通过自由基氧化来氧化Al而形成阻挡层。 下面的表面活性剂层向Al的底表面贡献氧，形成初始的非晶Al 2 O 3层。 该层在剩余的Al层中产生小的均匀的晶粒，这促进了Al在其上表面和下表面之间的随后的自由基氧化的均匀氧化。 设置钉扎层磁化的最终退火工艺增强了层的均匀氧化。

公开(公告)号：US20060044704A1

公开(公告)日：2006-03-02

申请号：US10933031

申请日：2004-09-02

申请人： Min Li ,  Kunliang Zhang ,  Cheng Horng ,  Chyu Torng ,  Yu-Hsia Chen ,  Ru-Ying Tong

发明人： Min Li ,  Kunliang Zhang ,  Cheng Horng ,  Chyu Torng ,  Yu-Hsia Chen ,  Ru-Ying Tong

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： Fe rich CoFe can be used in AP1 to enhance CPP GMR. However, this is found to degrade the electro-migration performance of the device. This problem has been solved by using an AP1 that is a laminate of several CoFe(25%) layers, separated from one another by copper layers. Ultra-thin layers of iron-rich CoFe are then inserted at all the copper-CoFe interfaces.

摘要翻译： FeFe CoFe可用于AP1，以提高CPP GMR。 然而，这被发现降低了器件的电迁移性能。 通过使用作为多层CoFe（25％）层的层叠体的AP1，通过铜层彼此分离，解决了该问题。 然后在所有铜 - 钴Fe界面上插入超薄的富铁CoFe层。

公开(公告)号：US20050201022A1

公开(公告)日：2005-09-15

申请号：US10796387

申请日：2004-03-09

申请人： Cheng Horng ,  Ru-Ying Tong

发明人： Cheng Horng ,  Ru-Ying Tong

IPC分类号： G01R33/09 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01F10/3272 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3948 ,  H01F10/3259 ,  H01F10/3263 ,  H01F41/306 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： A CPP-GMR spin value sensor structure with an improved MR ratio and increased resistance is disclosed. All layers except certain pinned layers, copper spacers, and a Ta capping layer are oxygen doped by adding a partial O2 pressure to the Ar sputtering gas during deposition. Oxygen doped CoFe free and pinned layers are made slightly thicker to offset a small decrease in magnetic moment caused by the oxygen dopant. Incorporating oxygen in the MnPt AFM layer enhances the exchange bias strength. An insertion layer such as a nano-oxide layer is included in one or more of the free, pinned, and spacer layers to increase interfacial scattering. The thickness of all layers except the copper spacer may be increased to enhance bulk scattering. A CPP-GMR single or dual spin valve of the present invention has up to a threefold increase in resistance and a 2 to 3% increase in MR ratio.

摘要翻译： 公开了具有改进的MR比和增加的电阻的CPP-GMR自旋值传感器结构。 除了某些被钉扎层，铜间隔物和Ta覆盖层之外的所有层通过在沉积期间向Ar溅射气体添加部分O 2 O 2压力而进行氧掺杂。 氧掺杂的CoFe自由和被钉扎层被制成稍微更厚以抵消由氧掺杂剂引起的小的磁矩的减小。 在MnPt AFM层中掺入氧增强了交换偏压强度。 诸如纳米氧化物层之类的插入层被包括在一个或多个游离，钉扎和间隔层中以增加界面散射。 除了铜间隔物之外的所有层的厚度可以增加以增加体散射。 本发明的CPP-GMR单自旋阀或双自旋阀的电阻增加了三倍，MR比增加了2〜3％。

公开(公告)号：US20050141149A1

公开(公告)日：2005-06-30

申请号：US11036959

申请日：2005-01-14

申请人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

发明人： Cheng Horng ,  Min Li ,  Ru-Ying Tong ,  Yun-Fei Li ,  You Zheng ,  Simon Liao ,  Kochan Ju ,  Cherng Han

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3143 ,  G11B5/3163 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.

公开(公告)号：US08268641B2

公开(公告)日：2012-09-18

申请号：US13373173

申请日：2011-11-07

申请人： Yimin Guo ,  Cheng Horng ,  Ru-Ying Tong

发明人： Yimin Guo ,  Cheng Horng ,  Ru-Ying Tong

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/302

摘要： A method of forming a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.

摘要翻译： 一种形成CPP MTJ MRAM元件的方法，其利用自旋角动量的转移作为改变自由层的磁矩方向的机构。 该器件包括MgO的隧道势垒层和Cu或Cr的非磁性CPP层，并且利用具有三个铁磁层的新型合成自由层，其在成对配置中相互交换耦合。 自由层包括内部铁磁体和两个外部铁磁性层，其中内层被铁磁交换耦合到一个外层并与另一个外层反耦合地进行反铁磁交换。 在厚度优选小于0.4nm的Ta，Hf或Zr的超薄层上，铁磁耦合是非常强的。

公开(公告)号：US07696548B2

公开(公告)日：2010-04-13

申请号：US11200380

申请日：2005-08-09

申请人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

发明人： Po-Kang Wang ,  Yimin Guo ,  Cheng Horng ,  Tai Min ,  Ru-Ying Tong

IPC分类号： H01L29/94

CPC分类号： H01L43/08

摘要： An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.

摘要翻译： 公开了一种MRAM，其具有由沿第一轴的磁化方向的铁磁层，超顺磁性（SP）自由层和在它们之间形成的绝缘层构成的MTJ。 SP自由层具有在没有外部场的情况下基本为零的残余磁化，并且其中磁化大致与外部场成正比，直到达到饱和值。 在一个实施例中，单独的存储层形成在MTJ的上方，下方或附近，并且具有沿其易于轴线平行于第一轴线的磁化方向的单轴各向异性。 在第二实施例中，存储层形成在MTJ内的非磁性导电间隔层上，并与MTJ同时构图。 SP自由层可以是CoFeB的多层或层压层。 存储层可以具有SyAP配置和层压结构。