公开(公告)号：US5051955A

公开(公告)日：1991-09-24

申请号：US543526

申请日：1990-06-26

申请人： Yasuo Kobayashi

发明人： Yasuo Kobayashi

IPC分类号： G11C11/419 ,  G11C7/10 ,  G11C11/409

CPC分类号： G11C7/106 ,  G11C7/1051

摘要： A semiconductor memory device capable of reading out stored data at high speed and with low power consumption includes a sense amplifier for amplifying a data signal stored in a selected memory cell, a data latch circuit for latching the output signal of the sense amplifier, a switching circuit for outputting the output signal of the data latch circuit, and an output circuit for receiving the output signal of the sense amplifier and the output signal of the switching circuit and generating a data output signal. It also includes at the power supply side, switching means for keeping the sense amplifier in an operative state as long as data signal is amplified in response to a sense enable signal.

公开(公告)号：US4954937A

公开(公告)日：1990-09-04

申请号：US404657

申请日：1989-09-08

申请人： Yasuo Kobayashi ,  Naoki Hagiwara ,  Taisuke Hirota ,  Churyo Kodama ,  Yasuo Hirasawa ,  Katsumi Miyazaki ,  Fumio Kawamura ,  Takao Higashi ,  Masami Yanagisawa ,  Akinori Sei

发明人： Yasuo Kobayashi ,  Naoki Hagiwara ,  Taisuke Hirota ,  Churyo Kodama ,  Yasuo Hirasawa ,  Katsumi Miyazaki ,  Fumio Kawamura ,  Takao Higashi ,  Masami Yanagisawa ,  Akinori Sei

IPC分类号： H01J61/35

CPC分类号： H01J61/35

摘要： A lighting lamp is disclosed, comprising a lamp having laminated on the surface of a bulb thereof a display sheet, said display sheet comprising a support having thereon an active layer containing a pigment which is faded by the action of an active light and an active light-adjusting layer.

公开(公告)号：US4766572A

公开(公告)日：1988-08-23

申请号：US813604

申请日：1985-12-26

申请人： Yasuo Kobayashi

发明人： Yasuo Kobayashi

IPC分类号： G11C11/417 ,  G11C7/10 ,  G11C7/22 ,  G11C8/18 ,  G11C11/401 ,  G11C11/41 ,  G11C11/419 ,  G11C7/00 ,  G11C8/00

CPC分类号： G11C7/22 ,  G11C7/1006 ,  G11C7/1051 ,  G11C8/18

摘要： A semiconductor memory is disclosed which attains a data read operation at a high speed with a low power dissipation. The memory includes a sense amplifier amplifying a data signal stored in the selected memory cell, a data latch circuit latching the output signal of the sense amplifier, a switching circuit outputting the output signal of the sense amplifier before the data latch circuit latches the output signal of the sense amplifier and outputting the output signal of the data latch circuit after the data latch circuit latches the output signal of the sense amplifier, and an output circuit producing an output data signal responsive to the output signal of the switching circuit.

摘要翻译： 公开了半导体存储器，其以低功耗实现高速数据读取操作。 存储器包括放大存储在所选存储单元中的数据信号的读出放大器，锁存读出放大器的输出信号的数据锁存电路，在数据锁存电路锁存输出信号之前输出读出放大器的输出信号的开关电路 并且在数据锁存电路锁存读出放大器的输出信号之后输出数据锁存电路的输出信号，以及响应于开关电路的输出信号产生输出数据信号的输出电路。

公开(公告)号：US4464209A

公开(公告)日：1984-08-07

申请号：US465349

申请日：1983-02-09

申请人： Tadaaki Taira ,  Junichiro Takehara ,  Yasuo Kobayashi ,  Kazuyoshi Ume

发明人： Tadaaki Taira ,  Junichiro Takehara ,  Yasuo Kobayashi ,  Kazuyoshi Ume

IPC分类号： B23K20/00 ,  B32B15/01 ,  C21D9/08 ,  C21D9/14 ,  C22C38/00 ,  C22C38/04 ,  C22C38/12 ,  B21C37/06 ,  B32B1/08

CPC分类号： C22C38/04 ,  C21D9/14 ,  C22C38/001 ,  C22C38/12 ,  Y10T428/12958 ,  Y10T428/12965 ,  Y10T428/12979

摘要： A clad steel pipe excellent in corrosion resistance and low-temperature toughness, which comprises a cladding sheet of high corrosion resistant steel and a substrate sheet of low-alloy high-strength steel, the substrate sheet consisting, as the fundamental constituents, essentially of:carbon: from 0.002 to 0.050 wt. %,silicon: from 0.05 to 0.80 wt. %,manganese: from 0.80 to 2.20 wt. %,niobium: from 0.01 to 0.10 wt. %,aluminum: from 0.01 to 0.08 wt. %,nitrogen: from 0.002 to 0.008 wt. %, and,the balance being iron and incidental impurities;or, the substrate sheet further additionally containing, as the strength-improving constituents, at least one element selected from the group consisting of:copper: from 0.05 to 1.00 wt. %,nickel: from 0.05 to 3.00 wt. %,chromium: from 0.05 to 1.00 wt. %,molybdenum: from 0.03 to 0.80 wt. %,vanadium: from 0.01 to 0.10 wt. %, and,boron: from 0.0003 to 0.0030 wt. %;or, the substrate sheet further additionally containing, as the toughness-improving constituent, titanium within the range of from 0.005 to 0.030 wt. %,the clad steel pipe being subjected to a solution treatment under the following conditions:heating temperature: from 900.degree. to 1,150.degree. C.,holding period: up to 15 minutes, and,cooling rate: from 5.degree. to 100.degree. C./second.

摘要翻译： 一种耐腐蚀性和低温韧性优异的复合钢管，其特征在于，包括高耐腐蚀性钢板的包覆片和低合金高强度钢的基材片，所述基材片基本上由以下组成： 碳：0.002〜0.050重量％ ％，硅：0.05〜0.80重量％ ％，锰：0.80〜2.20wt。 ％，铌：0.01〜0.10wt。 ％，铝：0.01〜0.08重量％ ％，氮：0.002〜0.008wt。 ％，余量为铁和杂质; 或者，所述基材片还另外含有作为强度提高成分的至少一种选自铜：0.05〜1.00wt。 ％，镍：0.05〜3.00重量％ ％，铬：0.05〜1.00重量％ ％，钼：0.03〜0.80重量％ ％，钒：0.01〜0.10wt。 ％，硼：0.0003〜0.0030wt。 ％; 或者，还含有作为韧性提高成分的基材，其含有0.005〜0.030重量％的钛。 ％，复合钢管在以下条件下进行固溶处理：加热温度：900〜1150℃，保温期：长达15分钟，冷却速度：5〜100℃ /第二。

公开(公告)号：US08765605B2

公开(公告)日：2014-07-01

申请号：US13138242

申请日：2010-01-22

申请人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

发明人： Masahiro Horigome ,  Takuya Kurotori ,  Yasuo Kobayashi ,  Takaaki Matsuoka ,  Toshihisa Nozawa

IPC分类号： H01L21/44

CPC分类号： H01L21/32051 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/2855 ,  H01L21/3105 ,  H01L21/3146 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76864

摘要： A method for manufacturing semiconductor devices includes the steps of annealing an insulating layer and forming a barrier layer including a metal element over the insulating layer. The insulating layer includes a fluorocarbon (CFx) film. The barrier layer is formed by a high-temperature sputtering process after the annealing step.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在绝缘层上退火绝缘层并形成包含金属元件的阻挡层。 绝缘层包括碳氟化合物（CFx）膜。 在退火步骤之后通过高温溅射工艺形成阻挡层。

公开(公告)号：US20100183756A1

公开(公告)日：2010-07-22

申请号：US12663607

申请日：2008-06-06

申请人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

发明人： Yasuo Kobayashi ,  Kyo Nagashima ,  Masami Mochizuki

IPC分类号： A61K36/22 ,  A61P1/14 ,  A01K21/00

CPC分类号： A61K36/22 ,  A23K20/158

摘要： The present invention provides a rumen fermentation improving agent, comprising cashew nut shell liquid.

摘要翻译： 本发明提供了含有腰果壳液的瘤胃发酵改良剂。

公开(公告)号：US20050150455A1

公开(公告)日：2005-07-14

申请号：US11002788

申请日：2004-12-03

申请人： Yasuo Kobayashi ,  Masao Yoshioka

发明人： Yasuo Kobayashi ,  Masao Yoshioka

IPC分类号： H01L21/302 ,  C23C16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H05H1/46

CPC分类号： H01L21/02052 ,  H01J37/32192 ,  H01J2237/2001 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/67115

摘要： The present invention provides a processing apparatus and a processing method, both of which can carry out a low-temperature process to allow active gas species to react with an oxide film on an object to be processed to form a product film and a heating process to heat the object to a predetermined temperature to evaporate the product film, in succession. This processing apparatus 12 is provided with a shielding plate 103 capable of entering a gap between the object W and a transparent window 28 and also withdrawing from the gap. On condition that the shielding plate 103 is closed to cut off irradiation heat from the transparent window 28, the product film is formed by allowing the active gas species of NF3 gas to react with a native oxide film on the object under the low-temperature condition. After that, upon closing the shielding plate 103, the native oxide film is removed by applying heat irradiated from a heating lamp 36 to the product film through the transparent window 28. Additionally, the apparatus includes a low-temperature processing chamber 207 allowing NF3 gas to react with the native oxide film at a low temperature and a heating chamber 209 for heating the product film, independently.

摘要翻译： 本发明提供了一种处理装置和处理方法，它们都可以进行低温处理，以使活性气体物质与待处理物体上的氧化膜反应以形成产物膜和加热过程 将物体加热到预定温度，以连续蒸发产物膜。 该处理装置12设置有能够进入物体W和透明窗28之间的间隙并且也从间隙排出的遮蔽板103。 在屏蔽板103闭合以截断来自透明窗28的照射热的条件下，通过使NF 3 N 3气体的活性气体种类与自然氧化物膜反应形成产物膜， 物体在低温条件下。 之后，在闭合屏蔽板103时，通过从加热灯36照射的热量通过透明窗口28将该自然氧化膜移除到产品膜。此外，该设备包括一个低温处理室207， 在低温下与天然氧化物膜反应，并且独立地加热产物膜的加热室209。

公开(公告)号：US06776874B2

公开(公告)日：2004-08-17

申请号：US09736147

申请日：2000-12-15

申请人： Yasuo Kobayashi ,  Kotaro Miyatani ,  Kaoru Maekawa

发明人： Yasuo Kobayashi ,  Kotaro Miyatani ,  Kaoru Maekawa

IPC分类号： H05H100

CPC分类号： H01L21/02063 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/2001 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67115

摘要： A processing method and apparatus for removing a native oxide film from the surface of a subject to be treated, wherein plasma is generated from N2 and H2 gases and then activated to form an activated gas species, NF3 gas is added to the activated gas species to generate an activated gas of these three gases, the subject is cooled to not higher than a predetermined temperature by a cooling means, gas generated from the N2, H2 and NF3 gases is reacted with the surface of the subject to degenerate the native oxide film into a reactive film, the reactive film is sublimated and thus the native oxide film is removed if the subject is heated to a given temperature; a cluster system which includes the above apparatus and other apparatuses and which is capable of carrying a subject to be treated in an unreactive atmosphere.

摘要翻译： 一种用于从待处理对象的表面除去天然氧化物膜的处理方法和装置，其中从N 2和H 2气体产生等离子体，然后激活以形成活化气体物质，将NF 3气体加入到活化气体物质中 产生这三种气体的活性气体，通过冷却装置将被检体冷却至不高于预定温度，从N2，H2和NF3气体产生的气体与受试者的表面反应，将天然氧化物膜简化为 反应性膜，活性膜升华，因此如果受试者被加热到给定温度，则去除天然氧化物膜; 一种集群系统，其包括上述装置和其他装置，并且能够携带在无反应气氛中待处理的对象。

公开(公告)号：US06317851B1

公开(公告)日：2001-11-13

申请号：US09123467

申请日：1998-07-28

申请人： Yasuo Kobayashi

发明人： Yasuo Kobayashi

IPC分类号： G11C2900

CPC分类号： G11C29/36

摘要： A memory test circuit in which time required for a memory test is reduced is disclosed. A memory test circuit according to the present invention is provided with stripe data generating means for generating stripe data composed of plural bits based upon a block address signal, means for writing the above stripe data to a predetermined address of a memory, means for reading information written to the above predetermined address of the memory and compare means for judging whether the above read information is the same as the stripe data or not. The above stripe data generating means generates stripe data in a cycle 2 in response to a first state of the above block address signal and generates stripe data in a cycle 4 in response to a second state of the block address signal.

摘要翻译： 公开了一种存储器测试电路，其中减少了存储器测试所需的时间。 根据本发明的存储器测试电路设置有条形数据产生装置，用于基于块地址信号产生由多个位组成的条带数据，用于将上述条带数据写入存储器的预定地址的装置，用于读取信息的装置 写入存储器的上述预定地址，以及用于判断上述读取信息是否与条带数据相同的比较装置。 上述条带数据产生装置响应于上述块地址信号的第一状态在周期2中产生条带数据，并响应于块地址信号的第二状态在周期4中产生条带数据。

公开(公告)号：US5684445A

公开(公告)日：1997-11-04

申请号：US614009

申请日：1996-03-12

申请人： Yasuo Kobayashi ,  Koichi Ueki

发明人： Yasuo Kobayashi ,  Koichi Ueki

IPC分类号： H01F27/28 ,  H01F27/32 ,  H01F30/10 ,  H01F27/30

CPC分类号： H01F27/324 ,  H01F27/2866 ,  H01F30/10

摘要： A power transformer is formed of a pair of cores having wiring storage portions, at least one primary winding formed of a spirally wound flat ring having a pair of primary leading portions, at least one secondary winding formed of a flat plate, at least one spacer interposed between the flat ring and the flat plate, and an insulation member mounted in the wiring storage portions of the cores. The flat ring, flat plate and at least one spacer for insulating the flat ring and the flat plate are housed in the insulation member. The insulation member has an opening for allowing the primary leading portions to pass therethrough. In order to insulate the primary leading portions from burrs of the secondary winding, a protrusion may be formed on an outer periphery of the spacer to be located under the primary leading portions, or a cut-out portion may be formed in the flat plate.

摘要翻译： 电力变压器由具有布线存储部分的一对芯体形成，至少一个初级绕组由具有一对初级引导部分的螺旋卷绕平环形成，至少一个由平板形成的次级绕组，至少一个间隔件 介于平环和平板之间，以及安装在芯的布线存储部分中的绝缘构件。 扁平环，平板和用于绝缘平环和平板的至少一个间隔件容纳在绝缘构件中。 绝缘构件具有用于使一次引导部分通过的开口。 为了将初级引导部分与次级绕组的毛刺绝缘，可以在间隔件的外周上形成突起，以将其定位在主引导部分下方，或者可以在平板中形成切口部分。