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    DUAL-FREQUENCY, DIRECT-DRIVE INDUCTIVELY COUPLED PLASMA SOURCE
    21.
    发明申请
    DUAL-FREQUENCY, DIRECT-DRIVE INDUCTIVELY COUPLED PLASMA SOURCE 有权

    公开(公告)号：US20220199365A1

    公开(公告)日：2022-06-23

    申请号：US17606686

    申请日：2020-04-24

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Alexander Miller Paterson

    IPC: H01J37/32

    Abstract: A direct drive system for providing RF power to a substrate processing system includes a direct drive enclosure including a first direct drive circuit located in the direct drive enclosure and operating at a first frequency and a first connector connected to the first direct drive circuit. A junction box is arranged adjacent to the direct drive enclosure and includes a first capacitive circuit connected to the first direct drive circuit; a second connector located on one side of the junction box, connected to one terminal of the first capacitive circuit and mating with the first connector of the direct drive enclosure; third and fourth connectors connected to another terminal of the first capacitive circuit; and a coil enclosure arranged adjacent to the junction box and including first and second coils and fifth and sixth connectors mating with the third and fourth connectors of the junction box.

    Frequency tuning for a matchless plasma source
    22.
    发明授权
    Frequency tuning for a matchless plasma source 审中-公开

    公开(公告)号：US10672590B2

    公开(公告)日：2020-06-02

    申请号：US15921266

    申请日：2018-03-14

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

    IPC: H01J37/32

    Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

    Frequency Tuning for a Matchless Plasma Source
    23.
    发明申请
    Frequency Tuning for a Matchless Plasma Source 审中-公开

    公开(公告)号：US20190287764A1

    公开(公告)日：2019-09-19

    申请号：US15921266

    申请日：2018-03-14

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

    IPC: H01J37/32

    Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

    Matchless Plasma Source for Semiconductor Wafer Fabrication
    24.
    发明申请
    Matchless Plasma Source for Semiconductor Wafer Fabrication 审中-公开

    公开(公告)号：US20190116656A1

    公开(公告)日：2019-04-18

    申请号：US15787660

    申请日：2017-10-18

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Ricky Marsh ,  Alex Paterson

    IPC: H05H1/46

    Abstract: A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

    Reference Box for Direct-Drive Radiofrequency Power Supply
    25.
    发明申请
    Reference Box for Direct-Drive Radiofrequency Power Supply 有权

    公开(公告)号：US20240404804A1

    公开(公告)日：2024-12-05

    申请号：US18689017

    申请日：2022-09-13

    Applicant: Lam Research Corporation

    Inventor： Alexander Miller Paterson ,  Daniel Guzman ,  William T. Hart ,  Cristian Siladie ,  Michael John Martin ,  Yuhou Wang ,  Michael Drymon ,  John Drewery ,  Robert Griffith O'Neill ,  Luc Albarede ,  Neil Simon Ocampo

    IPC: H01J37/32 ,  H01J37/34

    Abstract: A radiofrequency calibration system for a direct-drive radiofrequency power supply includes a reference box that includes a reference circuit for converting a non-reference input impedance to a reference output impedance. The reference box has an input connector electrically connected to a radiofrequency output coupling of the direct-drive radiofrequency power supply. A radiofrequency power meter has a radiofrequency power input electrically connected to an output connector of the reference box. The radiofrequency power meter has an input impedance and an output impedance that substantially match the reference output impedance of the reference box. A cable has a first end electrically connected to a radiofrequency power output of the radiofrequency power meter and a second end connected to a test load that has an impedance that substantially matches the reference output impedance of the reference box. A controller is connected in data communication with a data interface of the radiofrequency power meter.

    Frequency tuning for a matchless plasma source
    29.
    发明授权
    Frequency tuning for a matchless plasma source 有权

    公开(公告)号：US11437219B2

    公开(公告)日：2022-09-06

    申请号：US16885083

    申请日：2020-05-27

    Applicant: Lam Research Corporation

    Inventor： Maolin Long ,  Yuhou Wang ,  Ying Wu ,  Alex Paterson

    IPC: H01J37/32

    Abstract: Frequency tuning for a matchless plasma source is described. To perform the frequency tuning, current is measured at an output of an amplification circuit of the matchless plasma source after a change in a frequency of operation of the matchless plasma source. Upon determining that the current has increased with the change in the frequency of operation, the frequency of operation is further changed until the current has decreased. When the current has decreased, the changed frequency of operation is further modified to be an operational frequency. When the matchless plasma source operates at the operational frequency, the current at the output of the amplification circuit is maximized.

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