公开(公告)号：US09691833B2

公开(公告)日：2017-06-27

申请号：US14838631

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Seungmin Lee ,  Juheyuck Baeck ,  Hoiyong Kwon ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L29/10 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3262 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present invention relates to a thin film transistor substrate having two different types of semiconductor materials on the same substrate, and a display using the same. A disclosed display may include a substrate, a first thin film transistor having a polycrystalline semiconductor material on the substrate and a second thin film transistor having an oxide semiconductor material on the substrate.

公开(公告)号：US20250040194A1

公开(公告)日：2025-01-30

申请号：US18917872

申请日：2024-10-16

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  JuHeyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US20230361189A1

公开(公告)日：2023-11-09

申请号：US18217147

申请日：2023-06-30

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/423 ,  H01L27/146 ,  H01L29/43

CPC classification number: H01L29/42376 ,  H01L27/14614 ,  H01L29/42384 ,  H01L29/435

Abstract: A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US20220190170A1

公开(公告)日：2022-06-16

申请号：US17398767

申请日：2021-08-10

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC: H01L29/786 ,  G09G3/3233 ,  H01L27/12

Abstract: One embodiment of the present disclosure provides a thin film transistor comprising an auxiliary electrode, a gate electrode and an active layer disposed between the auxiliary electrode and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion disposed at one side of the channel portion, and a second connection portion disposed at the other side of the channel portion, and the channel portion includes a first portion overlapped with the auxiliary electrode and a second portion not overlapped with the auxiliary electrode. One embodiment of the present disclosure also provides a display apparatus comprising the thin film transistor.

公开(公告)号：US11171245B2

公开(公告)日：2021-11-09

申请号：US16519577

申请日：2019-07-23

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32

Abstract: A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.

公开(公告)号：US20190123142A1

公开(公告)日：2019-04-25

申请号：US16210934

申请日：2018-12-05

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck BAECK ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417 ,  H01L29/49

CPC classification number: H01L29/1054 ,  H01L27/1225 ,  H01L29/41775 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US10083990B2

公开(公告)日：2018-09-25

申请号：US14838564

申请日：2015-08-28

Applicant: LG Display Co., Ltd.

Inventor： Saeroonter Oh ,  Kwanghwan Ji ,  Hyunsoo Shin ,  Jeyong Jeon ,  Dohyung Lee

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L51/52

CPC classification number: H01L27/1222 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/322 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3272 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/78633 ,  H01L29/78672 ,  H01L29/7869 ,  H01L51/5209 ,  H01L51/5225

Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.