公开(公告)号：US20180006056A1

公开(公告)日：2018-01-04

申请号：US15391636

申请日：2016-12-27

Applicant: LG Display Co., Ltd.

Inventor： JongUk BAE ,  YongHo JANG ,  JunHyeon BAE ,  Kwanghwan JI ,  PilSang YUN ,  Jiyong NOH

IPC: H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1362 ,  H01L29/786 ,  G09G3/36 ,  G09G3/3266 ,  G09G3/3258 ,  G09G3/3275

CPC classification number: H01L27/124 ,  G02F1/136209 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0291 ,  G09G2310/08 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.