公开(公告)号：US20180190822A1

公开(公告)日：2018-07-05

申请号：US15839611

申请日：2017-12-12

Applicant: LG Display Co., Ltd. ,  Hangyang University Industry-University Cooperation Foundation

Inventor： Jin Seong PARK ,  Kyung Chul OCK ,  Ki Lim HAN ,  JongUk BAE ,  SeungMin LEE ,  JuHeyuck BAECK

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66 ,  H01L27/12 ,  G02F1/1368

Abstract: Disclosed is a thin film transistor substrate that may include a base substrate, a first protection film disposed on the base substrate, an oxide semiconductor layer disposed on the first protection film, a gate electrode insulated from the oxide semiconductor layer and partially overlapped with at least one portion of the oxide semiconductor layer, a source electrode connected with the oxide semiconductor layer, and a drain electrode provided at a predetermined interval from the source electrode and connected with the oxide semiconductor layer, wherein the oxide semiconductor layer has a hydrogen content of 2.4 at % (atomic % or atom %)˜2.6 at %.

公开(公告)号：US20180006056A1

公开(公告)日：2018-01-04

申请号：US15391636

申请日：2016-12-27

Applicant: LG Display Co., Ltd.

Inventor： JongUk BAE ,  YongHo JANG ,  JunHyeon BAE ,  Kwanghwan JI ,  PilSang YUN ,  Jiyong NOH

IPC: H01L27/12 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1362 ,  H01L29/786 ,  G09G3/36 ,  G09G3/3266 ,  G09G3/3258 ,  G09G3/3275

CPC classification number: H01L27/124 ,  G02F1/136209 ,  G02F1/136286 ,  G02F1/1368 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0291 ,  G09G2310/08 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: Disclosed are an oxide thin film transistor (TFT), a method of manufacturing the same, and a display panel and a display device using the same, in which a first conductor and a second conductor are provided at end portions of a semiconductor layer formed of oxide semiconductor. The first conductor and second conductor are electrically connected to a first electrode and a second electrode, and covered by a gate insulation layer. The oxide TFT includes a semiconductor layer provided on a buffer and including an oxide semiconductor, a gate insulation layer covering the semiconductor layer and the buffer, a gate electrode provided on the gate insulation layer to overlap a portion of the semiconductor layer, and a passivation layer covering the gate and the gate insulation layer.

公开(公告)号：US20180190824A1

公开(公告)日：2018-07-05

申请号：US15858679

申请日：2017-12-29

Applicant: LG Display Co., Ltd.

Inventor： JongUk BAE ,  YongHo JANG

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: Disclosed are a thin film transistor, a method of manufacturing the same, and an organic light emitting display device including the same, in which a driving stability of a driving transistor is enhanced even without connecting a source electrode to a bottom gate electrode of the driving transistor. The film transistor includes a N-type semiconductor layer, a P-type semiconductor layer on the N-type semiconductor layer, a first gate electrode on the P-type semiconductor layer, a gate insulation layer between the first gate electrode and the P-type semiconductor layer, a first source electrode connected to a first side of the P-type semiconductor layer, and a first drain electrode connected to a second side of the P-type semiconductor layer.

公开(公告)号：US20180033804A1

公开(公告)日：2018-02-01

申请号：US15660803

申请日：2017-07-26

Applicant: LG Display Co., Ltd.

Inventor： JunHyeon BAE ,  JongUk BAE

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/10 ,  H01L29/786 ,  H01L21/8238

CPC classification number: H01L27/1225 ,  H01L21/823871 ,  H01L29/1054 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696

Abstract: Disclosed is a thin film transistor including both an N-type semiconductor layer and a P-type semiconductor layer, a method for manufacturing the same, and a display device including the same, wherein the thin film transistor may include a first gate electrode on a substrate; a first gate insulating film covering the first gate electrode; a semiconductor layer on the first gate insulating film; a second gate insulating film covering the semiconductor layer; and a second gate electrode on the second gate insulating film, wherein the semiconductor layer includes the N-type semiconductor layer and the P-type semiconductor layer.

公开(公告)号：US20180204952A1

公开(公告)日：2018-07-19

申请号：US15906498

申请日：2018-02-27

Applicant: LG Display Co., Ltd.

Inventor： JongUk BAE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78636 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming a deficiency and an upper layer for minimizing external affection, on the multilayered source and drain electrodes.

公开(公告)号：US20140339537A1

公开(公告)日：2014-11-20

申请号：US14026769

申请日：2013-09-13

Applicant: LG Display Co., Ltd.

Inventor： JongUk BAE

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78636 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78693

Abstract: The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming a deficiency and an upper layer for minimizing external affection, on the multilayered source and drain electrodes.

Abstract translation: 本发明涉及一种氧化物薄膜晶体管及其制造方法。 在使用无定形氧化锌（ZnO）半导体作为有源层的氧化物薄膜晶体管中，通过在具有至少两层的多层结构中形成源电极和漏电极，可以最小化由于干蚀刻而导致的氧化物半导体的损伤，并且 通过在多层源极和漏极上采用包括用于克服缺陷的下层和用于最小化外部影响的上层的双钝化层结构来提高器件的稳定性和可靠性。