公开(公告)号：US20170047459A1

公开(公告)日：2017-02-16

申请号：US15235955

申请日：2016-08-12

Applicant: LG ELECTRONICS INC.

Inventor： Mann YI ,  Daeyong LEE ,  Jeongkyu KIM ,  Junyong AHN

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/03921 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell includes injecting impurities of a second conductive type opposite a first conductive type into an entire first surface of a semiconductor substrate containing impurities of the first conductive type, the semiconductor substrate having the first surface, a side surface, and a second surface opposite the first surface, forming a doping barrier layer on the entire first surface and the entire side surface of the semiconductor substrate, and at an edge portion of the second surface of the semiconductor substrate, injecting the impurities of the first conductive type into the second surface of the semiconductor substrate at which the doping barrier layer is not formed, at a higher concentration than the semiconductor substrate, performing a thermal process on the semiconductor substrate to simultaneously form an emitter region of the second conductive type at the entire first and side surfaces of the semiconductor substrate and a back surface field region of the first conductive type at the second surface of the semiconductor substrate, and removing the doping barrier layer.

Abstract translation: 公开了一种太阳能电池及其制造方法。 制造太阳能电池的方法包括将含有第一导电类型的第二导电类型的杂质注入包含第一导电类型的杂质的半导体衬底的整个第一表面，具有第一表面的半导体衬底，侧表面和 与第一表面相对的第二表面，在半导体衬底的整个第一表面和整个侧表面上形成掺杂阻挡层，并且在半导体衬底的第二表面的边缘部分处，注入第一导电类型的杂质 在没有形成掺杂阻挡层的半导体衬底的第二表面中，以比半导体衬底更高的浓度进行热处理，在半导体衬底上进行热处理，同时在整个第一衬底上形成第二导电类型的发射极区 和半导体衬底的侧表面和背面fie 在该半导体衬底的第二表面处的第一导电类型的区域，以及去除该掺杂阻挡层。

公开(公告)号：US20170012148A1

公开(公告)日：2017-01-12

申请号：US15204447

申请日：2016-07-07

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong LEE ,  Junyong AHN ,  Mann YI ,  Jeongkyu KIM

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/03529 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed is method of manufacturing a solar cell including forming a barrier film over at least one surface of a semiconductor substrate or a semiconductor layer, forming a first conductive area on the at least one surface of the semiconductor substrate or the semiconductor layer via ion implantation of a first conductive dopant through the barrier film, and removing the barrier film.

Abstract translation: 公开了一种制造太阳能电池的方法，包括在半导体衬底或半导体层的至少一个表面上形成阻挡膜，通过离子注入在半导体衬底或半导体层的至少一个表面上形成第一导电区域 通过阻挡膜的第一导电掺杂剂，并去除阻挡膜。

公开(公告)号：US20160308083A1

公开(公告)日：2016-10-20

申请号：US15189384

申请日：2016-06-22

Applicant: LG ELECTRONICS INC.

Inventor： Junyong AHN ,  Gyeayoung Kwag ,  Juhwa Cheong

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/0684 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/022458 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first conductive impurities, an emitter layer doped with second conductive impurities having polarities opposite polarities of the first conductive impurities on the substrate, an anti-reflective layer on an entire surface of the substrate, an upper electrode that passes through the anti-reflective layer and is connected to the emitter layer, and a lower electrode connected to a lower portion of the substrate. The emitter layer includes a first emitter layer heavily doped with the second conductive impurities and a second emitter layer lightly doped with the second conductive impurities. A surface resistance of the second emitter layer is 100 Ohm/sq to 120 Ohm/sq.

Abstract translation: 公开了一种硅太阳能电池及其制造方法。 硅太阳能电池包括掺杂有第一导电杂质的硅半导体衬底，掺杂有具有与衬底上的第一导电杂质的极性相反的极性的第二导电杂质的发射极层，在衬底的整个表面上的抗反射层， 上电极穿过抗反射层并连接到发射极层，下电极连接到衬底的下部。 发射极层包括重掺杂有第二导电杂质的第一发射极层和轻掺杂有第二导电杂质的第二发射极层。 第二发射极层的表面电阻为100欧姆/平方至120欧姆/平方。

公开(公告)号：US20140256084A1

公开(公告)日：2014-09-11

申请号：US14286806

申请日：2014-05-23

Applicant: LG ELECTRONICS INC.

Inventor： Jungmin HA ,  Junyong AHN ,  Jinho KIM

IPC: H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/186 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/03529 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547

Abstract: A method for manufacturing a solar cell is discussed. The method may include injecting first impurity ions at a first surface of a substrate by using a first ion implantation method to form a first impurity region, the substrate having a first conductivity type and the first impurity ions having a second conductivity type, and the first impurity region having the second conductivity type; heating the substrate with the first impurity region to activate the first impurity region to form an emitter region from the first impurity region; etching the emitter region from a surface of the emitter region to a predetermined depth to form an emitter part from the emitter region; and forming a first electrode on the emitter part to connect to the emitter part and a second electrode on a second surface of the substrate to connect to the second surface of the substrate.

Abstract translation: 讨论了太阳能电池的制造方法。 所述方法可以包括通过使用第一离子注入方法在衬底的第一表面处注入第一杂质离子以形成第一杂质区，所述衬底具有第一导电类型，并且所述第一杂质离子具有第二导电类型，并且所述第一杂质离子 具有第二导电类型的杂质区; 用所述第一杂质区域加热所述衬底以激活所述第一杂质区域以从所述第一杂质区域形成发射极区域; 将发射极区域从发射极区域的表面蚀刻到预定深度以从发射极区域形成发射极部分; 以及在所述发射极部分上形成第一电极以连接到所述发射极部分，以及在所述基板的第二表面上连接到所述基板的第二表面的第二电极。