公开(公告)号：US20100315625A1

公开(公告)日：2010-12-16

申请号：US12767339

申请日：2010-04-26

申请人： Alex SALNIK ,  Jon Opsal ,  Lena Nicolaides

发明人： Alex SALNIK ,  Jon Opsal ,  Lena Nicolaides

IPC分类号： G01N21/00

CPC分类号： G01N21/1717 ,  G01N2021/1719 ,  G01N2021/178

摘要： Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

摘要翻译： 使用调制光学反射率（MOR）测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面，使用从诸如结深度，结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面，开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法，将实际测量与从模型计算的理论测量值进行比较，以确定实际深度分布。

公开(公告)号：US07403022B2

公开(公告)日：2008-07-22

申请号：US11334962

申请日：2006-01-19

申请人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal ,  Mira Bakshi

发明人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal ,  Mira Bakshi

IPC分类号： G01R31/02

CPC分类号： G01N21/1717 ,  G01N2021/1725 ,  G01R31/2648 ,  G01R31/2656

摘要： A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.

摘要翻译： 公开了一种用于确定半导体样品的超浅结中峰值载流子浓度的方法。 样品表面的周期性地被激发。 激发的影响由探测光束监测。 同步检测产生同相（I）和正交（Q）信号。 将这些信号与从校准样品获得的信号进行比较，以评估峰值载流子浓度。

公开(公告)号：US07248367B2

公开(公告)日：2007-07-24

申请号：US10796603

申请日：2004-03-08

申请人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

发明人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

IPC分类号： G01N21/00

CPC分类号： G01R31/307 ,  G01N21/1717

摘要： To measure USJ profile abruptness, a PMR-type optical metrology tool is to perform a series of two or more measurements, each with different pump/probe beam separations. Quadrature (Q) and in-phase (I) measurements are obtained for each measurement and used to derive a line in I-Q space. An abruptness measurement is derived by comparing the line slope to a similar line slope obtained for a sample having a known USJ profile. USJ profile depth is measured by obtaining quadrature (Q) values for one or more measurements. Each Q value is translated to a corresponding depth measurement using a table or similar lookup device.

摘要翻译： 为了测量USJ轮廓的突然性，PMR型光学测量工具将执行一系列两个或更多个测量，每个测量具有不同的泵/探针光束分离。 对于每个测量获得正交（Q）和同相（I）测量，并用于在I-Q空间中导出线。 通过将线斜率与对于具有已知USJ曲线的样本获得的类似线斜率进行比较，得出突然度测量。 通过获得一次或多次测量的正交（Q）值来测量USJ轮廓深度。 使用表或类似的查找设备将每个Q值转换为相应的深度测量。

公开(公告)号：US07106446B2

公开(公告)日：2006-09-12

申请号：US10439455

申请日：2003-05-16

申请人： Lena Nicolaides ,  Jeffrey T. Fanton ,  Alex Salnik ,  Jon Opsal

发明人： Lena Nicolaides ,  Jeffrey T. Fanton ,  Alex Salnik ,  Jon Opsal

IPC分类号： G01N21/55

CPC分类号： G01N21/39 ,  G01N21/1717 ,  G01N21/55 ,  G01N21/636 ,  G01N21/9501 ,  G01N2201/0612 ,  G01N2201/0691

摘要： A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.

公开(公告)号：US20050190369A1

公开(公告)日：2005-09-01

申请号：US11122452

申请日：2005-05-05

申请人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

发明人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

IPC分类号： G01N21/27 ,  G01N21/35 ,  G01N21/55 ,  G01N21/00

CPC分类号： G01N21/276 ,  G01N21/1717 ,  G01N21/55 ,  G01N2021/3568

摘要： A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.

摘要翻译： 在离子注入的半导体中同时监测离子注入剂量，损伤和/或掺杂剂深度分布的方法包括校准步骤，其中在I-Q空间中识别已知损伤谱的光调制反射率。 在随后的测量步骤中，经验地测量受试者的光调制反射率以获得同相和正交值。 然后在I-Q空间中将同相和正交值与已知的损伤特征进行比较，以表征受试者的损伤特征。

公开(公告)号：US06917039B2

公开(公告)日：2005-07-12

申请号：US10315588

申请日：2002-12-10

申请人： Lena Nicolaides ,  Alex Salnik

发明人： Lena Nicolaides ,  Alex Salnik

IPC分类号： G01N21/17 ,  G01N21/95 ,  G01N25/72 ,  G01N21/88

CPC分类号： G01N21/1717 ,  G01N21/171 ,  G01N21/9501

摘要： A method and apparatus for evaluating a semiconductor wafer. A combination of a photothermal modulated reflectance method and system with a photothermal IR radiometry system and method is utilized to provide information which can be used to determine properties of semiconductor wafers being evaluated. The system and method can provide for utilizing a common probe source and a common intensity modulated energy source. The system and method further provide an infrared detector for monitoring changes in infrared radiation emitted from a sample, and photodetector for monitoring changes in beam reflected from the sample.

公开(公告)号：US20050083528A1

公开(公告)日：2005-04-21

申请号：US10387259

申请日：2003-03-12

申请人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

发明人： Alex Salnik ,  Lena Nicolaides ,  Jon Opsal

IPC分类号： G01N21/27 ,  G01N21/35 ,  G01N21/55 ,  G01N21/88

CPC分类号： G01N21/276 ,  G01N21/1717 ,  G01N21/55 ,  G01N2021/3568

摘要： A method for simultaneously monitoring ion implantation dose, damage and/or dopant depth profiles in ion-implanted semiconductors includes a calibration step where the photo-modulated reflectance of a known damage profile is identified in I-Q space. In a following measurement step, the photo-modulated reflectance of a subject is empirically measured to obtain in-phase and quadrature values. The in-phase and quadrature values are then compared, in I-Q space, to the known damage profile to characterize the damage profile of the subject.

摘要翻译： 在离子注入的半导体中同时监测离子注入剂量，损伤和/或掺杂剂深度分布的方法包括校准步骤，其中在I-Q空间中识别已知损伤谱的光调制反射率。 在随后的测量步骤中，经验地测量受试者的光调制反射率以获得同相和正交值。 然后在I-Q空间中将同相和正交值与已知的损伤特征进行比较，以表征受试者的损伤特征。

公开(公告)号：US08415961B1

公开(公告)日：2013-04-09

申请号：US12961932

申请日：2010-12-07

申请人： Guoheng Zhao ,  Alex Salnik ,  Lena Nicolaides ,  Ady Levy

发明人： Guoheng Zhao ,  Alex Salnik ,  Lena Nicolaides ,  Ady Levy

IPC分类号： G01R27/08 ,  G01R31/308

CPC分类号： G01R31/2656 ,  G01R31/2648

摘要： A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.

摘要翻译： 一种方法可以包括利用光源照射半导体的第一区域。 该方法还可以包括利用探针来测量电能传输的至少一个特征，所述探针用于放置半导体照明的第一区域中或其附近的至少一个。 该方法还可以包括改变由入射到半导体上的来自光源的光产生的电能传输的测量的至少一个特性，同时保持光源的强度。 此外，该方法可以包括利用电能传输的变化的至少一个特性来确定半导体的结的薄层电阻。

公开(公告)号：US08120776B1

公开(公告)日：2012-02-21

申请号：US12545015

申请日：2009-08-20

申请人： Alex Salnik ,  Lena Nicolaides

发明人： Alex Salnik ,  Lena Nicolaides

IPC分类号： G01N21/55

CPC分类号： G01N21/1717 ,  G01N2021/1725

摘要： Carrier activation and end-of-range defect density of ultra-shallow junctions in integrated circuits are determined using modulated optical reflectance signals, DC reflectances of pump or probe laser beams, and in-phase and quadrature signal processing. A method for determining characteristics of an ultra-shallow junction includes periodically exciting a region of the substrate using a pump laser beam, and reflecting a probe laser beam from the excited region. A modulated optical reflectance signal is measured along with DC reflectance of the probe laser beam. The modulated optical reflectance signal and DC reflectance are compared with reference signals generated from calibration substrates to determine carrier activation and end-of-range defect density in the junction.

摘要翻译： 使用调制的光反射信号，泵浦或探针激光束的直流反射以及同相和正交信号处理来确定集成电路中超浅结的载流子激活和终端缺陷密度。 用于确定超浅结的特性的方法包括使用泵浦激光束周期性地激励基板的区域，并且反射来自激发区域的探测激光束。 测量调制的光反射信号与探测激光束的直流反射率一起测量。 将调制的光反射信号和DC反射率与从校准基板产生的参考信号进行比较，以确定接合处的载流子激活和端部范围缺陷密度。

公开(公告)号：US07982867B2

公开(公告)日：2011-07-19

申请号：US12767339

申请日：2010-04-26

申请人： Alex Salnik ,  Jon Opsal ,  Lena Nicolaides

发明人： Alex Salnik ,  Jon Opsal ,  Lena Nicolaides

IPC分类号： G01N21/00

CPC分类号： G01N21/1717 ,  G01N2021/1719 ,  G01N2021/178

摘要： Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

摘要翻译： 使用调制光学反射率（MOR）测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面，使用从诸如结深度，结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面，开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法，将实际测量与从模型计算的理论测量值进行比较，以确定实际深度分布。