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45 条记录 (耗时 0.017 秒)

    LED Solar Illuminator
    1.
    发明申请
    LED Solar Illuminator 失效
    LED太阳能照明器

    公开(公告)号：US20120256559A1

    公开(公告)日：2012-10-11

    申请号：US13081734

    申请日：2011-04-07

    申请人： Guoheng Zhao ,  Ady Levy ,  Alex Salnik ,  Mehdi Vaez-Iravani ,  Lena Nicolaides ,  Samuel S.H. Ngai

    发明人： Guoheng Zhao ,  Ady Levy ,  Alex Salnik ,  Mehdi Vaez-Iravani ,  Lena Nicolaides ,  Samuel S.H. Ngai

    IPC分类号： H05B37/02

    CPC分类号： H05B33/0803

    摘要： An apparatus for illuminating a target surface, the apparatus having a plurality of LED arrays, where each of the arrays has a plurality of individually addressable LEDs, and where at least one of the arrays is disposed at an angle of between about forty-five degrees and about ninety degrees relative to the target surface, where all of the arrays supply light into a light pipe, the light pipe having interior walls made of a reflective material, where light exiting the light pipe illuminates the target surface, and a controller for adjusting an intensity of the individually addressable light sources.

    摘要翻译： 一种用于照射目标表面的装置，该装置具有多个LED阵列，其中每个阵列具有多个独立可寻址的LED，并且其中至少一个阵列以大约四十五度之间的角度设置 并且相对于目标表面大约九十度，其中所有的阵列将光提供到光管中，光管具有由反射材料制成的内壁，其中离开光管的光照射目标表面，以及用于调节的控制器 独立寻址光源的强度。

    Modulated reflectance measurement system with multiple wavelengths
    2.
    发明授权
    Modulated reflectance measurement system with multiple wavelengths 有权
    多波长调制反射测量系统

    公开(公告)号：US07423757B2

    公开(公告)日：2008-09-09

    申请号：US11492583

    申请日：2006-07-25

    申请人： Lena Nicolaides ,  Jeffrey T. Fanton ,  Alex Salnik ,  Jon Opsal

    发明人： Lena Nicolaides ,  Jeffrey T. Fanton ,  Alex Salnik ,  Jon Opsal

    IPC分类号： G01N21/55

    CPC分类号： G01N21/39 ,  G01N21/1717 ,  G01N21/55 ,  G01N21/636 ,  G01N21/9501 ,  G01N2201/0612 ,  G01N2201/0691

    摘要： A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.

    摘要翻译： 调制反射测量系统包括三个基于单色二极管的激光器。 每个激光器可以作为探测光束或作为泵浦光源操作。 使用一系列反射镜和分束器将激光输出重定向到达物镜。 物镜将激光输出聚焦在样品上。 反射能量通过目标返回，并被分束器重定向到检测器。 锁定放大器转换检测器的输出以产生正交（Q）和同相（I）信号用于分析。 处理器使用Q和/或I信号来分析样本。 通过改变用作泵浦或探针光束源的激光器的数量，可以优化测量系统以测量不同样品类型的范围。

    Methods for depth profiling in semiconductors using modulated optical reflectance technology
    3.
    发明申请
    Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
    采用调制光学反射技术的半导体深度剖面方法

    公开(公告)号：US20080151247A1

    公开(公告)日：2008-06-26

    申请号：US11998118

    申请日：2007-11-28

    申请人： Alex Salnik ,  Jon Opsal ,  Lena Nicolaides

    发明人： Alex Salnik ,  Jon Opsal ,  Lena Nicolaides

    IPC分类号： G01N21/55

    CPC分类号： G01N21/1717 ,  G01N2021/1719 ,  G01N2021/178

    摘要： Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

    摘要翻译： 使用调制光学反射率（MOR）测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面，使用从诸如结深度，结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面，开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法，将实际测量与从模型计算的理论测量值进行比较，以确定实际深度分布。

    Method for measuring ion-implanted semiconductors with improved repeatability
    7.
    发明申请
    Method for measuring ion-implanted semiconductors with improved repeatability 失效
    用于测量具有改善的重复性的离子注入半导体的方法

    公开(公告)号：US20050195399A1

    公开(公告)日：2005-09-08

    申请号：US11067961

    申请日：2005-02-28

    申请人： Lena Nicolaides ,  Mira Bakshi ,  Alex Salnik ,  Jon Opsal

    发明人： Lena Nicolaides ,  Mira Bakshi ,  Alex Salnik ,  Jon Opsal

    IPC分类号： G01N21/55

    CPC分类号： G01N21/171 ,  H01L22/12

    摘要： The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.

    摘要翻译： 通过采用晶圆响应的空间平均测量可以提高晶片均匀性测量的重复性。 通过增加获得测量的时间，可以显着降低噪声量，从而提高测量的重复性。 这些测量可以在晶片上的几个位置进行，以确保晶片的均匀性。 为了获得对晶圆工艺的稳定和可重复的评估，解决与损伤弛豫或不完全退火有关的不确定性，可以在远离TW测量箱的距离处执行退火衰减因子（ADF）表征。 从ADF测量和晶片响应的空间平均测量，可以获得晶片工艺的可重复评估。

    Measuring sheet resistance and other properties of a semiconductor
    8.
    发明授权
    Measuring sheet resistance and other properties of a semiconductor 有权
    测量薄膜电阻等半导体性能

    公开(公告)号：US08415961B1

    公开(公告)日：2013-04-09

    申请号：US12961932

    申请日：2010-12-07

    申请人： Guoheng Zhao ,  Alex Salnik ,  Lena Nicolaides ,  Ady Levy

    发明人： Guoheng Zhao ,  Alex Salnik ,  Lena Nicolaides ,  Ady Levy

    IPC分类号： G01R27/08 ,  G01R31/308

    CPC分类号： G01R31/2656 ,  G01R31/2648

    摘要： A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.

    摘要翻译： 一种方法可以包括利用光源照射半导体的第一区域。 该方法还可以包括利用探针来测量电能传输的至少一个特征，所述探针用于放置半导体照明的第一区域中或其附近的至少一个。 该方法还可以包括改变由入射到半导体上的来自光源的光产生的电能传输的测量的至少一个特性，同时保持光源的强度。 此外，该方法可以包括利用电能传输的变化的至少一个特性来确定半导体的结的薄层电阻。

    Measuring characteristics of ultra-shallow junctions
    9.
    发明授权
    Measuring characteristics of ultra-shallow junctions 失效
    超浅结点的测量特性

    公开(公告)号：US08120776B1

    公开(公告)日：2012-02-21

    申请号：US12545015

    申请日：2009-08-20

    申请人： Alex Salnik ,  Lena Nicolaides

    发明人： Alex Salnik ,  Lena Nicolaides

    IPC分类号： G01N21/55

    CPC分类号： G01N21/1717 ,  G01N2021/1725

    摘要： Carrier activation and end-of-range defect density of ultra-shallow junctions in integrated circuits are determined using modulated optical reflectance signals, DC reflectances of pump or probe laser beams, and in-phase and quadrature signal processing. A method for determining characteristics of an ultra-shallow junction includes periodically exciting a region of the substrate using a pump laser beam, and reflecting a probe laser beam from the excited region. A modulated optical reflectance signal is measured along with DC reflectance of the probe laser beam. The modulated optical reflectance signal and DC reflectance are compared with reference signals generated from calibration substrates to determine carrier activation and end-of-range defect density in the junction.

    摘要翻译： 使用调制的光反射信号，泵浦或探针激光束的直流反射以及同相和正交信号处理来确定集成电路中超浅结的载流子激活和终端缺陷密度。 用于确定超浅结的特性的方法包括使用泵浦激光束周期性地激励基板的区域，并且反射来自激发区域的探测激光束。 测量调制的光反射信号与探测激光束的直流反射率一起测量。 将调制的光反射信号和DC反射率与从校准基板产生的参考信号进行比较，以确定接合处的载流子激活和端部范围缺陷密度。

    Methods for depth profiling in semiconductors using modulated optical reflectance technology
    10.
    发明授权
    Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
    采用调制光学反射技术的半导体深度剖面方法

    公开(公告)号：US07982867B2

    公开(公告)日：2011-07-19

    申请号：US12767339

    申请日：2010-04-26

    申请人： Alex Salnik ,  Jon Opsal ,  Lena Nicolaides

    发明人： Alex Salnik ,  Jon Opsal ,  Lena Nicolaides

    IPC分类号： G01N21/00

    CPC分类号： G01N21/1717 ,  G01N2021/1719 ,  G01N2021/178

    摘要： Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

    摘要翻译： 使用调制光学反射率（MOR）测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面，使用从诸如结深度，结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面，开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法，将实际测量与从模型计算的理论测量值进行比较，以确定实际深度分布。