公开(公告)号：US20220271499A1

公开(公告)日：2022-08-25

申请号：US17249224

申请日：2021-02-24

Applicant: Mellanox Technologies, Ltd.

Inventor： Yuri Berk ,  Vladimir Iakovlev ,  Isabelle Cestier ,  Elad Mentovich

IPC: H01S5/068 ,  H01S5/34 ,  H01S5/343 ,  H01S5/183

Abstract: VCSELs designed to emit light at a characteristic wavelength in a wavelength range of 910-2000 nm and formed on a silicon substrate are provided. Integrated VCSEL systems are also provided that include one or more VCSELs formed on a silicon substrate and one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate. In an integrated VCSEL system, at least one of the one or more electrical, optical, and/or electro-optical components formed and/or mounted onto the silicon substrate is electrically or optically coupled to at least one of the one or more VSCELs on the silicon substrate. Methods for fabricating VCSELs on a silicon substrate and/or fabricating an integrated VCSEL system are also provided.

公开(公告)号：US20220209503A1

公开(公告)日：2022-06-30

申请号：US17138623

申请日：2020-12-30

Applicant: Mellanox Technologies, Ltd.

Inventor： Yuri Berk ,  Vladimir lakovlev ,  Tamir Sharkaz ,  Elad Mentovich ,  Matan Galanty ,  ltshak Kalifa

IPC: H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/125 ,  H01S5/20 ,  H01S5/042

Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

公开(公告)号：US20210313770A1

公开(公告)日：2021-10-07

申请号：US16841824

申请日：2020-04-07

Applicant: Mellanox Technologies, Ltd.

Inventor： Vladimir Iakovlev ,  Yuri Berk ,  Elad Mentovich ,  Tamir Sharkaz

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/30 ,  H01S5/343 ,  H01S5/20 ,  H01S5/02 ,  H01S5/00

Abstract: Methods for fabricating vertical cavity surface emitting lasers (VCSELs) on a large wafer are provided. An un-patterned epi layer form is bonded onto a first reflector form. The first reflector form includes a first reflector layer and a wafer of a first substrate type. The un-patterned epi layer form includes a plurality of un-patterned layers on a wafer of a second substrate type. The first and second substrate types have different thermal expansion coefficients. A resulting bonded blank is substantially non-varying in a plane that is normal to an intended emission direction of the VCSEL. A first regrowth is performed to form first regrowth layers, some of which are patterned to form a tunnel junction pattern. A second regrowth is performed to form second regrowth layers. A second reflector form is bonded onto the second regrowth layers, wherein the second reflector form includes a second reflector layer.

公开(公告)号：US10461507B1

公开(公告)日：2019-10-29

申请号：US15944955

申请日：2018-04-04

Applicant: Mellanox Technologies, Ltd.

Inventor： Alexei Sirbu ,  Vladimir Iakovlev ,  Yuri Berk ,  Elad Mentovich

IPC: H01S5/42 ,  H01S5/183 ,  H01S5/187 ,  H01S5/042 ,  H01S5/022 ,  H01S5/028 ,  H01S5/40 ,  H01S5/343

Abstract: A vertical-cavity surface-emitting laser (VCSEL), substrate emitting VCSEL, and multi-beam emitting device and corresponding manufacturing processes are provided. An example VCSEL comprises a substrate having a first surface and a second surface; an output coupling mirror disposed on the second surface of the substrate; a high reflectivity mirror; and an active cavity material structure disposed between the output coupling mirror and the high reflectivity mirror. The active cavity material structure comprises a first current-spreading layer, a second current-spreading layer, an active region disposed between the first current-spreading layer and the second current-spreading layer, and a tunnel junction overgrown by the second current spreading layer, wherein the tunnel junction is disposed adjacent the active region. The VCSEL is configured to emit radiation outward through the first surface of the substrate.