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    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) DEVICE AND METHOD OF MAKING THE SAME
    2.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) DEVICE AND METHOD OF MAKING THE SAME 有权

    公开(公告)号：US20210305783A1

    公开(公告)日：2021-09-30

    申请号：US16828764

    申请日：2020-03-24

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Itshak Kalifa ,  Elad Mentovich ,  Vladimir Iakovlev ,  Yuri Berk ,  Tamir Sharkaz

    IPC: H01S5/183 ,  H01S5/343

    Abstract: A VCSEL includes an active region between a top distributed Bragg reflector (DBR) and a bottom DBR each having alternating GaAs and AlGaAs layers. The active region includes quantum wells (QW) confined between top and bottom GaAs-containing current-spreading layers (CSL), an aperture layer having an optical aperture and a tunnel junction layer above the QW. A GaAs intermediate layer configured to have an open top air gap is disposed over a boundary layer of the active region and the top DBR. The air gap is made wider than the optical aperture and has a height equal to one quarter of VCSEL's emission wavelength in air. The top DBR is attached to the intermediate layer by applying wafer bonding techniques. VCSEL output, the air gap, and the optical aperture are aligned on the same optical axis. The bottom DBR is epitaxially grown on a silicon or a GaAs substrate.

    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) WITH CASCADED ACTIVE REGION
    4.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) WITH CASCADED ACTIVE REGION 有权

    公开(公告)号：US20210184432A1

    公开(公告)日：2021-06-17

    申请号：US17247401

    申请日：2020-12-10

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir Iakovlev ,  Tamir Sharkaz ,  Elad Mentovich

    IPC: H01S5/183 ,  H01S5/227

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided that includes a mesa structure disposed on a substrate. The mesa structure defines an emission axis of the VCSEL. The mesa structure includes a first reflector, a second reflector, and a cascaded active region structure disposed between the first reflector and the second reflector. The cascaded active region structure includes a plurality of cascaded active region layers disposed along the emission axis, where each of the cascade active region layers includes an active region having multi-quantum well and/or dots layers (MQLs), a tunnel junction aligned with the emission axis, and an oxide confinement layer. The oxide confinement layer is disposed between the tunnel junction and MQLs, and has an electrical current aperture defined therein. The mesa structure defines an optical window through which the VCSEL is configured to emit light.

    Fabrication of low-cost long wavelength VCSEL with optical confinement control
    5.
    发明授权
    Fabrication of low-cost long wavelength VCSEL with optical confinement control 有权

    公开(公告)号：US11611195B2

    公开(公告)日：2023-03-21

    申请号：US17138623

    申请日：2020-12-30

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir Iakovlev ,  Tamir Sharkaz ,  Elad Mentovich ,  Matan Galanty ,  Itshak Kalifa

    IPC: H01S5/00 ,  H01S5/183 ,  H01S5/042 ,  H01S5/343 ,  H01S5/125 ,  H01S5/20 ,  H01S5/30

    Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

    Communication between data centers using a multi-core fiber
    6.
    发明授权
    Communication between data centers using a multi-core fiber 有权

    公开(公告)号：US11303379B1

    公开(公告)日：2022-04-12

    申请号：US17160422

    申请日：2021-01-28

    Applicant: MELLANOX TECHNOLOGIES, LTD.

    Inventor： Donald Becker ,  Dimitrios Kalavrouziotis ,  Boaz Atias ,  Itshak Kalifa ,  Tamir Sharkaz ,  Paraskevas Bakopoulos ,  Elad Mentovich

    IPC: H04J14/02 ,  H04B10/2581 ,  H04Q11/00 ,  H04J14/08

    Abstract: A system includes a pair of network devices, a universal multi-core fiber (UMCF) interconnect, and a pair of wavelength-division multiplexing (WDM) devices. Each network device includes (i) first optical communication devices configured to communicate first optical signals having a first carrier wavelength and (ii) second optical communication devices configured to communicate second optical signals having a second carrier wavelength. The universal multi-core fiber (UMCF) interconnect includes multiple cores that are configured to convey the first optical signals and the second optical signals between the network devices, using single-mode propagation for the first optical signals and multi-mode propagation for the second optical signals. Each WDM device is connected between a respective network device and the UMCF interconnect and configured to couple the first and second optical communication devices of the respective network device to the cores in accordance with a defined channel assignment.

    Self-aligned integrated lens on pillar
    8.
    发明授权
    Self-aligned integrated lens on pillar 有权

    公开(公告)号：US12055774B2

    公开(公告)日：2024-08-06

    申请号：US17453222

    申请日：2021-11-02

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Dimitrios Kalavrouziotis ,  Yuri Berk ,  Vladimir Iakovlev ,  Elad Mentovich ,  Tamir Sharkaz

    IPC: G02B6/42 ,  B29D11/00

    CPC classification number: G02B6/4239 ,  B29D11/00009 ,  G02B6/4244

    Abstract: Various embodiments provide methods for fabricating a couplable electro-optical device. An example method comprises fabricating a pillar on a substrate by forming a lens spacer portion about an electro-optical component fabricated on the substrate; and adhering unshaped lens material to an exposed surface of the pillar. The exposed surface of the pillar is disposed opposite the substrate. The example method further comprises maintaining the unshaped lens material at a reflow temperature for a reflow time to allow the lens material to reflow into a formed lens shape, and curing the lens material to form an integrated lens having the formed lens shape secured to the lens spacer portion and formed about the electro-optical component on the substrate.

    FABRICATION OF LOW-COST LONG WAVELENGTH VCSEL WITH OPTICAL CONFINEMENT CONTROL
    10.
    发明申请
    FABRICATION OF LOW-COST LONG WAVELENGTH VCSEL WITH OPTICAL CONFINEMENT CONTROL 有权

    公开(公告)号：US20220209503A1

    公开(公告)日：2022-06-30

    申请号：US17138623

    申请日：2020-12-30

    Applicant: Mellanox Technologies, Ltd.

    Inventor： Yuri Berk ,  Vladimir lakovlev ,  Tamir Sharkaz ,  Elad Mentovich ,  Matan Galanty ,  ltshak Kalifa

    IPC: H01S5/183 ,  H01S5/30 ,  H01S5/343 ,  H01S5/125 ,  H01S5/20 ,  H01S5/042

    Abstract: Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

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