公开(公告)号：US20140166972A1

公开(公告)日：2014-06-19

申请号：US14185094

申请日：2014-02-20

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Neil Greeley ,  Gurtej Sandhu ,  John Smythe ,  Bhaskar Srinivasan

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

Abstract translation: 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。

公开(公告)号：US08617958B2

公开(公告)日：2013-12-31

申请号：US13685402

申请日：2012-11-26

Applicant: Micron Technology, Inc.

Inventor： Gurtej Sandhu ,  Bhaskar Srinivasan

IPC: H01L21/8222

CPC classification number: H01L21/04 ,  H01L27/1021 ,  H01L27/2418 ,  H01L29/1606 ,  H01L45/00

Abstract: Some embodiments include methods of forming diodes. A stack may be formed over a first conductive material. The stack may include, in ascending order, a sacrificial material, at least one dielectric material, and a second conductive material. Spacers may be formed along opposing sidewalls of the stack, and then an entirety of the sacrificial material may be removed to leave a gap between the first conductive material and the at least one dielectric material. In some embodiments of forming diodes, a layer may be formed over a first conductive material, with the layer containing supports interspersed in sacrificial material. At least one dielectric material may be formed over the layer, and a second conductive material may be formed over the at least one dielectric material. An entirety of the sacrificial material may then be removed.

Abstract translation: 一些实施例包括形成二极管的方法。 可以在第一导电材料上形成堆叠。 堆叠可以按升序包括牺牲材料，至少一种电介质材料和第二导电材料。 间隔物可以沿着堆叠的相对侧壁形成，然后可以去除整个牺牲材料以在第一导电材料和至少一个电介质材料之间留下间隙。 在形成二极管的一些实施例中，可以在第一导电材料上形成层，其中包含支撑体的层散布在牺牲材料中。 可以在该层上形成至少一种介电材料，并且可以在该至少一种电介质材料的上方形成第二导电材料。 然后可以去除整个牺牲材料。

公开(公告)号：US20130314973A1

公开(公告)日：2013-11-28

申请号：US13956242

申请日：2013-07-31

Applicant: Micron Technology, Inc.

Inventor： Roy E. Meade ,  Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: G11C13/00 ,  H01L45/00

CPC classification number: H01L45/085 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0069 ,  G11C2213/56 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/146

Abstract: Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.

Abstract translation: 一些实施例包括编程存储器单元的方法。 多个电荷载体可以在存储器单元内移动，其中跨越移动电荷载流子的绝对值大于2的平均电荷。一些实施例包括形成和编程基于离子传输的存储单元的方法。 堆叠形成为在第一和第二电极之间具有可编程材料。 可编程材料具有在可编程材料内移动的移动离子，以将可编程材料从一个存储器状态转换到另一个。 移动移动离子上的平均电荷具有大于2的绝对值。一些实施例包括在第一和第二电极之间具有可编程材料的存储单元。 可编程材料包括氮化铝第一层，并且包括含有与第一层共同的可移动离子物质的第二层。

公开(公告)号：US20130285110A1

公开(公告)日：2013-10-31

申请号：US13929348

申请日：2013-06-27

Applicant: Micron Technology, Inc.

Inventor： Bhaskar Srinivasan ,  Gurtej S. Sandhu

IPC: H01L29/88 ,  H01L21/3205

CPC classification number: H01L29/88 ,  H01L21/3205 ,  H01L27/1021 ,  Y10S438/957

Abstract: Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.

Abstract translation: 公开了包括用作具有低介电常数的高带隙材料的开放体积的装置。 开放体积可以在选择装置中提供更非线性的非对称I-V曲线和增强的整流行为。 选择装置可以包括例如金属 - 绝缘体 - 绝缘体 - 金属（MIIM）二极管。 可以使用各种方法来形成包括这种选择装置的选择装置和存储器系统。 存储器件和电子系统包括这样的选择器件。

公开(公告)号：US20130234091A1

公开(公告)日：2013-09-12

申请号：US13837736

申请日：2013-03-15

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Neil Greeley ,  Bhaskar Srinivasan ,  Gurtej Sandhu ,  John Smythe

IPC: H01L45/00

CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/06 ,  H01L45/085 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1608 ,  H01L45/165 ,  H01L45/1658 ,  H01L45/1683

Abstract: Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.

Abstract translation: 用于形成包含掺杂的硫族化物材料的存储器存取装置的自对准制造方法。 该方法可用于形成三维堆叠的交叉点存储器阵列。 该方法包括在第一导电电极上形成绝缘材料，图案化绝缘材料以形成暴露第一导电电极的部分的通孔，在绝缘材料的通孔内形成存储器访问装置，并在存储器访问上形成存储元件 设备，其中存储在所述存储器元件中的数据可经由所述存储器访问设备访问。 存储器存取装置由掺杂的硫族化物材料形成，并使用自对准制造方法形成。